ATE514972T1 - Schutzmembran und verfahren zu seiner herstellung - Google Patents
Schutzmembran und verfahren zu seiner herstellungInfo
- Publication number
- ATE514972T1 ATE514972T1 AT09159299T AT09159299T ATE514972T1 AT E514972 T1 ATE514972 T1 AT E514972T1 AT 09159299 T AT09159299 T AT 09159299T AT 09159299 T AT09159299 T AT 09159299T AT E514972 T1 ATE514972 T1 AT E514972T1
- Authority
- AT
- Austria
- Prior art keywords
- plane
- silicon single
- single crystal
- crystal
- pellicle
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012528 membrane Substances 0.000 title 1
- 230000001681 protective effect Effects 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000003776 cleavage reaction Methods 0.000 abstract 1
- 230000007017 scission Effects 0.000 abstract 1
- 239000011800 void material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008120664A JP4928494B2 (ja) | 2008-05-02 | 2008-05-02 | ペリクルおよびペリクルの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE514972T1 true ATE514972T1 (de) | 2011-07-15 |
Family
ID=40941653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT09159299T ATE514972T1 (de) | 2008-05-02 | 2009-05-04 | Schutzmembran und verfahren zu seiner herstellung |
Country Status (7)
Country | Link |
---|---|
US (1) | US7951513B2 (de) |
EP (1) | EP2113809B1 (de) |
JP (1) | JP4928494B2 (de) |
KR (1) | KR101435226B1 (de) |
CN (1) | CN101571671A (de) |
AT (1) | ATE514972T1 (de) |
TW (1) | TWI398723B (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2051139B1 (de) * | 2007-10-18 | 2010-11-24 | Shin-Etsu Chemical Co., Ltd. | Pellikel und Verfahren zu dessen Herstellung |
JP4934099B2 (ja) * | 2008-05-22 | 2012-05-16 | 信越化学工業株式会社 | ペリクルおよびペリクルの製造方法 |
CN102822744B (zh) * | 2010-04-02 | 2015-04-01 | 信越化学工业株式会社 | 光掩模单元及其制造方法 |
KR102068146B1 (ko) * | 2010-06-25 | 2020-01-20 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 방법 |
JP2012151158A (ja) * | 2011-01-17 | 2012-08-09 | Shin Etsu Chem Co Ltd | Euv用ペリクル膜及びペリクル、並びに該膜の製造方法 |
EP2541559B1 (de) * | 2011-06-30 | 2014-03-26 | Rohm and Haas Electronic Materials LLC | Transparente leitfähige Artikel |
KR101303795B1 (ko) * | 2011-12-26 | 2013-09-04 | 주식회사 에프에스티 | 초극자외선용 펠리클 및 그 제조방법 |
US20130250260A1 (en) * | 2012-03-23 | 2013-09-26 | Globalfoundries Inc. | Pellicles for use during euv photolithography processes |
WO2013152921A1 (en) * | 2012-04-12 | 2013-10-17 | Asml Netherlands B.V. | Pellicle, reticle assembly and lithographic apparatus |
WO2014142125A1 (ja) | 2013-03-15 | 2014-09-18 | 旭化成イーマテリアルズ株式会社 | ペリクル膜及びペリクル |
US9182686B2 (en) | 2013-06-13 | 2015-11-10 | Globalfoundries U.S. 2 Llc | Extreme ultraviolet radiation (EUV) pellicle formation apparatus |
US9057957B2 (en) | 2013-06-13 | 2015-06-16 | International Business Machines Corporation | Extreme ultraviolet (EUV) radiation pellicle formation method |
US9360749B2 (en) | 2014-04-24 | 2016-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pellicle structure and method for forming the same |
WO2015174412A1 (ja) * | 2014-05-16 | 2015-11-19 | 三井化学株式会社 | ペリクル枠、ペリクル、枠部材、露光原版、露光装置、及び半導体装置の製造方法 |
EP3164764B1 (de) | 2014-07-04 | 2021-02-24 | ASML Netherlands B.V. | Membrane zur verwendung in einer lithographievorrichtung und lithographievorrichtung mit solch einer membran |
KR102233579B1 (ko) | 2014-08-12 | 2021-03-30 | 삼성전자주식회사 | 극자외선 리소그래피용 펠리클 |
WO2016032096A1 (ko) * | 2014-08-29 | 2016-03-03 | 주식회사 에프에스티 | 탄화규소를 이용한 펠리클 및 그 제조방법 |
CN113917783B (zh) | 2014-09-19 | 2023-12-19 | 三井化学株式会社 | 防护膜组件、其制造方法及曝光方法 |
CN106796391B (zh) * | 2014-09-19 | 2020-02-11 | 三井化学株式会社 | 防护膜组件、防护膜组件的制造方法及使用了防护膜组件的曝光方法 |
US10031411B2 (en) * | 2014-11-26 | 2018-07-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle for EUV mask and fabrication thereof |
GB2534404A (en) | 2015-01-23 | 2016-07-27 | Cnm Tech Gmbh | Pellicle |
JP6408396B2 (ja) * | 2015-02-17 | 2018-10-17 | 三井化学株式会社 | ペリクル膜の製造方法、ペリクルの製造方法、およびフォトマスクの製造方法 |
KR102696704B1 (ko) | 2015-07-17 | 2024-08-21 | 에이에스엠엘 네델란즈 비.브이. | 멤브레인 조립체를 제조하는 방법 |
US9950349B2 (en) | 2015-09-15 | 2018-04-24 | Internationa Business Machines Corporation | Drying an extreme ultraviolet (EUV) pellicle |
US9835940B2 (en) | 2015-09-18 | 2017-12-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to fabricate mask-pellicle system |
US9915867B2 (en) | 2015-09-24 | 2018-03-13 | International Business Machines Corporation | Mechanical isolation control for an extreme ultraviolet (EUV) pellicle |
KR101714908B1 (ko) * | 2015-10-23 | 2017-03-10 | 한양대학교 에리카산학협력단 | 극자외선 리소그래피용 펠리클 구조체 |
CA3008474A1 (en) | 2015-12-14 | 2017-06-22 | Asml Netherlands B.V. | A membrane for euv lithography |
US9759997B2 (en) * | 2015-12-17 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle assembly and method for advanced lithography |
KR102186010B1 (ko) | 2016-01-26 | 2020-12-04 | 한양대학교 산학협력단 | Euv 펠리클 구조체, 및 그 제조 방법 |
CN108699687B (zh) * | 2016-02-19 | 2022-03-01 | 爱沃特株式会社 | 化合物半导体基板、表膜、和化合物半导体基板的制造方法 |
KR101792409B1 (ko) * | 2016-04-21 | 2017-11-21 | 한양대학교 산학협력단 | Euv 펠리클 구조체, 및 그 제조 방법 |
JP6944768B2 (ja) * | 2016-08-29 | 2021-10-06 | エア・ウォーター株式会社 | ペリクルの製造方法 |
TWI612369B (zh) * | 2016-12-28 | 2018-01-21 | Micro Lithography Inc | Euv光罩無機保護薄膜組件製造方法 |
KR102330943B1 (ko) * | 2017-03-10 | 2021-11-25 | 삼성전자주식회사 | 포토마스크용 펠리클과 이를 포함하는 레티클 및 리소그래피용 노광 장치 |
JP6518801B2 (ja) | 2017-03-10 | 2019-05-22 | エスアンドエス テック カンパニー リミテッド | 極紫外線リソグラフィ用ペリクル及びその製造方法 |
US10509312B2 (en) * | 2017-09-26 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Approach for ultra thin-film transfer and handling |
KR101900720B1 (ko) | 2017-11-10 | 2018-09-20 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 펠리클 및 그의 제조방법 |
US11237475B2 (en) * | 2017-11-10 | 2022-02-01 | Asml Netherlands B.V. | EUV pellicles |
NL2022935B1 (en) | 2018-05-04 | 2020-04-30 | Asml Netherlands Bv | Pellicle for euv lithography |
JP7213249B2 (ja) * | 2018-07-06 | 2023-01-26 | 株式会社カネカ | ペリクル複合体及びその製造方法 |
JP7040427B2 (ja) | 2018-12-03 | 2022-03-23 | 信越化学工業株式会社 | ペリクル、ペリクル付露光原版、露光方法及び半導体の製造方法 |
JP7318580B2 (ja) * | 2020-03-30 | 2023-08-01 | 信越半導体株式会社 | Soiウェーハの製造方法 |
CN118076920A (zh) * | 2021-10-20 | 2024-05-24 | 日本碍子株式会社 | Euv透过膜 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2121980B (en) | 1982-06-10 | 1986-02-05 | Standard Telephones Cables Ltd | X ray masks |
JPH0262542A (ja) * | 1988-08-29 | 1990-03-02 | Shin Etsu Chem Co Ltd | エキシマレーザーリソグラフィー用ペリクル |
US5935733A (en) * | 1996-04-05 | 1999-08-10 | Intel Corporation | Photolithography mask and method of fabrication |
JP3386693B2 (ja) * | 1997-06-09 | 2003-03-17 | 信越化学工業株式会社 | ペリクルの製造方法 |
US6197454B1 (en) | 1998-12-29 | 2001-03-06 | Intel Corporation | Clean-enclosure window to protect photolithographic mask |
JP2000292908A (ja) * | 1999-04-02 | 2000-10-20 | Shin Etsu Chem Co Ltd | リソグラフィー用ペリクル |
US6623893B1 (en) | 2001-01-26 | 2003-09-23 | Advanced Micro Devices, Inc. | Pellicle for use in EUV lithography and a method of making such a pellicle |
US20030228529A1 (en) * | 2002-06-10 | 2003-12-11 | Dupont Photomasks, Inc. | Photomask and method for repairing defects |
JP2004339003A (ja) * | 2003-05-15 | 2004-12-02 | Shin Etsu Handotai Co Ltd | シリコンエピタキシャルウェーハ及びシリコンエピタキシャルウェーハの製造方法 |
JP2005070120A (ja) * | 2003-08-27 | 2005-03-17 | Shin Etsu Chem Co Ltd | リソグラフィ用ペリクル |
JP2005215508A (ja) * | 2004-01-30 | 2005-08-11 | Nikon Corp | 基板及び露光装置並びに露光システム |
JP2007293692A (ja) | 2006-04-26 | 2007-11-08 | Funai Electric Co Ltd | ディスクトップ型パーソナルコンピューター及び光学ドライブ搭載機器 |
EP2051139B1 (de) * | 2007-10-18 | 2010-11-24 | Shin-Etsu Chemical Co., Ltd. | Pellikel und Verfahren zu dessen Herstellung |
JP4861963B2 (ja) * | 2007-10-18 | 2012-01-25 | 信越化学工業株式会社 | ペリクルおよびペリクルの製造方法 |
JP4934099B2 (ja) * | 2008-05-22 | 2012-05-16 | 信越化学工業株式会社 | ペリクルおよびペリクルの製造方法 |
-
2008
- 2008-05-02 JP JP2008120664A patent/JP4928494B2/ja active Active
-
2009
- 2009-03-30 KR KR1020090026939A patent/KR101435226B1/ko active Active
- 2009-04-29 CN CNA2009101377343A patent/CN101571671A/zh active Pending
- 2009-04-29 TW TW098114161A patent/TWI398723B/zh active
- 2009-05-01 US US12/434,021 patent/US7951513B2/en active Active
- 2009-05-04 EP EP09159299A patent/EP2113809B1/de active Active
- 2009-05-04 AT AT09159299T patent/ATE514972T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20090274962A1 (en) | 2009-11-05 |
KR20090115657A (ko) | 2009-11-05 |
TW200947113A (en) | 2009-11-16 |
TWI398723B (zh) | 2013-06-11 |
JP2009271262A (ja) | 2009-11-19 |
CN101571671A (zh) | 2009-11-04 |
US7951513B2 (en) | 2011-05-31 |
KR101435226B1 (ko) | 2014-08-28 |
EP2113809A1 (de) | 2009-11-04 |
EP2113809B1 (de) | 2011-06-29 |
JP4928494B2 (ja) | 2012-05-09 |
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Legal Events
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |