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ATE492820T1 - Verfahren zur detektion der ladungsträgerspinpolarisation und vorrichtung dafür - Google Patents

Verfahren zur detektion der ladungsträgerspinpolarisation und vorrichtung dafür

Info

Publication number
ATE492820T1
ATE492820T1 AT07824084T AT07824084T ATE492820T1 AT E492820 T1 ATE492820 T1 AT E492820T1 AT 07824084 T AT07824084 T AT 07824084T AT 07824084 T AT07824084 T AT 07824084T AT E492820 T1 ATE492820 T1 AT E492820T1
Authority
AT
Austria
Prior art keywords
subject material
subject
spin
edge
carriers
Prior art date
Application number
AT07824084T
Other languages
English (en)
Inventor
Genhua Pan
Original Assignee
Univ Plymouth
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0619980A external-priority patent/GB2445377B/en
Priority claimed from GB0619978A external-priority patent/GB2442752B/en
Application filed by Univ Plymouth filed Critical Univ Plymouth
Application granted granted Critical
Publication of ATE492820T1 publication Critical patent/ATE492820T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G01R33/1238—Measuring superconductive properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Measuring Magnetic Variables (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
AT07824084T 2006-10-10 2007-10-09 Verfahren zur detektion der ladungsträgerspinpolarisation und vorrichtung dafür ATE492820T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0619980A GB2445377B (en) 2006-10-10 2006-10-10 Method of detecting electron spin polarisation and apparatus for the same
GB0619978A GB2442752B (en) 2006-10-10 2006-10-10 Method for detecting carrier spin polarisation and apparatus for the same
PCT/GB2007/003830 WO2008044001A2 (en) 2006-10-10 2007-10-09 Method of detecting carrier spin polarisation and apparatus for the same

Publications (1)

Publication Number Publication Date
ATE492820T1 true ATE492820T1 (de) 2011-01-15

Family

ID=39274915

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07824084T ATE492820T1 (de) 2006-10-10 2007-10-09 Verfahren zur detektion der ladungsträgerspinpolarisation und vorrichtung dafür

Country Status (5)

Country Link
US (1) US8093897B2 (de)
EP (1) EP2087366B1 (de)
AT (1) ATE492820T1 (de)
DE (1) DE602007011491D1 (de)
WO (1) WO2008044001A2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100982660B1 (ko) * 2008-08-01 2010-09-17 한국과학기술연구원 스핀 홀 효과를 이용한 자기메모리셀 판독 방법 및자기메모리 장치
JP5202450B2 (ja) * 2008-08-06 2013-06-05 株式会社日立製作所 局所磁界発生デバイス、磁界センサ、及び磁気ヘッド
US8300356B2 (en) * 2010-05-11 2012-10-30 Headway Technologies, Inc. CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording
JP5590488B2 (ja) * 2010-08-27 2014-09-17 独立行政法人理化学研究所 電流−スピン流変換素子
DK2800970T3 (en) 2012-01-04 2017-01-16 Magnomics S A Monolithic device for combining CMOS with magnetoresistive sensors
WO2013122024A1 (ja) * 2012-02-14 2013-08-22 Tdk株式会社 スピン注入電極構造及びそれを用いたスピン伝導素子
EP2688072B1 (de) * 2012-07-19 2014-06-18 Forschungsverbund Berlin e.V. Spintronikanordnung und Betriebsverfahren dafür
WO2014036510A1 (en) * 2012-09-01 2014-03-06 Purdue Research Foundation Non-volatile spin switch
CN103968948B (zh) * 2013-02-04 2016-04-27 清华大学 偏振光的检测方法
CN103968949B (zh) * 2013-02-04 2016-04-27 清华大学 偏振光检测系统
US9099119B2 (en) 2013-02-11 2015-08-04 HGST Netherlands B.V. Magnetic read sensor using spin hall effect
US8889433B2 (en) 2013-03-15 2014-11-18 International Business Machines Corporation Spin hall effect assisted spin transfer torque magnetic random access memory
CN103809101A (zh) * 2014-02-13 2014-05-21 中国科学院半导体研究所 光致反常霍尔效应的变温测量装置及测量方法
FR3021176B1 (fr) * 2014-05-15 2016-07-01 Thales Sa Circuit logique a base de vannes de spin du type a supercourant polarise en spin et circuit integrant de telles porte logiques
US9269415B1 (en) 2014-09-18 2016-02-23 International Business Machines Corporation Utilization of the anomalous hall effect or polarized spin hall effect for MRAM applications
CN105717467B (zh) * 2016-03-01 2019-03-29 中国科学院半导体研究所 铁磁半导体平面内磁各向异性的光电流测试系统及方法
US12082512B2 (en) 2019-10-24 2024-09-03 Microsoft Technology Licensing, Llc Semiconductor-superconductor hybrid device
US20210126181A1 (en) * 2019-10-24 2021-04-29 Microsoft Technology Licensing, Llc Semiconductor-superconductor hybrid device, its manufacture and uses
US11946890B2 (en) 2021-05-24 2024-04-02 Kla Corporation Method for measuring high resistivity test samples using voltages or resistances of spacings between contact probes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403999B1 (en) * 2000-05-23 2002-06-11 Spinix Corporation Detection of polarized spin transport in semiconductors
US7309903B2 (en) * 2002-03-26 2007-12-18 Japan Science And Technology Agency Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device
JP4714918B2 (ja) * 2002-11-29 2011-07-06 独立行政法人科学技術振興機構 スピン注入素子及びスピン注入素子を用いた磁気装置
EP1548702A1 (de) * 2003-12-24 2005-06-29 Interuniversitair Microelektronica Centrum Vzw Verfahren zur superschnellen Steuerung magnetischer Zelle sowie zugehörige Vorrichtungen
KR101093776B1 (ko) * 2010-01-21 2011-12-19 충남대학교산학협력단 자기 센서

Also Published As

Publication number Publication date
WO2008044001A2 (en) 2008-04-17
US20100072993A1 (en) 2010-03-25
EP2087366A2 (de) 2009-08-12
DE602007011491D1 (de) 2011-02-03
EP2087366B1 (de) 2010-12-22
US8093897B2 (en) 2012-01-10
WO2008044001A3 (en) 2008-10-02

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Legal Events

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