ATE141715T1 - Verfahren zur herstellung eines dünnfilmtransistors - Google Patents
Verfahren zur herstellung eines dünnfilmtransistorsInfo
- Publication number
- ATE141715T1 ATE141715T1 AT89201379T AT89201379T ATE141715T1 AT E141715 T1 ATE141715 T1 AT E141715T1 AT 89201379 T AT89201379 T AT 89201379T AT 89201379 T AT89201379 T AT 89201379T AT E141715 T1 ATE141715 T1 AT E141715T1
- Authority
- AT
- Austria
- Prior art keywords
- thin film
- source
- onto
- regions
- drain
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000013080 microcrystalline material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8801379A NL8801379A (nl) | 1988-05-30 | 1988-05-30 | Werkwijze voor het vervaardigen van een dunne-filmtransistor en een dergelijke dunne-filmtransistor. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE141715T1 true ATE141715T1 (de) | 1996-09-15 |
Family
ID=19852371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT89201379T ATE141715T1 (de) | 1988-05-30 | 1989-05-30 | Verfahren zur herstellung eines dünnfilmtransistors |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5102813A (de) |
| EP (1) | EP0344863B1 (de) |
| JP (1) | JPH02177368A (de) |
| KR (1) | KR0183964B1 (de) |
| AT (1) | ATE141715T1 (de) |
| CA (1) | CA1318417C (de) |
| DE (1) | DE68926980T2 (de) |
| NL (1) | NL8801379A (de) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5366917A (en) * | 1990-03-20 | 1994-11-22 | Nec Corporation | Method for fabricating polycrystalline silicon having micro roughness on the surface |
| US5691249A (en) * | 1990-03-20 | 1997-11-25 | Nec Corporation | Method for fabricating polycrystalline silicon having micro roughness on the surface |
| US5318919A (en) * | 1990-07-31 | 1994-06-07 | Sanyo Electric Co., Ltd. | Manufacturing method of thin film transistor |
| US5403760A (en) * | 1990-10-16 | 1995-04-04 | Texas Instruments Incorporated | Method of making a HgCdTe thin film transistor |
| EP0486047B1 (de) * | 1990-11-16 | 1999-09-01 | Seiko Epson Corporation | Verfahren zur Herstellung einer Dünnfilm-Halbleiteranordnung |
| GB9114018D0 (en) * | 1991-06-28 | 1991-08-14 | Philips Electronic Associated | Thin-film transistor manufacture |
| US5424230A (en) * | 1992-02-19 | 1995-06-13 | Casio Computer Co., Ltd. | Method of manufacturing a polysilicon thin film transistor |
| US5409851A (en) * | 1992-05-04 | 1995-04-25 | Goldstar Co., Ltd. | Method of making a thin film transistor |
| CN100539191C (zh) * | 1993-10-01 | 2009-09-09 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| US5719065A (en) | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
| DE4435461C2 (de) * | 1993-10-06 | 2001-09-20 | Micron Technology Inc N D Ges | Dünnfilmtransistor und dessen Herstellverfahren |
| US5796116A (en) * | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
| US5814529A (en) | 1995-01-17 | 1998-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor |
| JP3440291B2 (ja) * | 1995-05-25 | 2003-08-25 | 独立行政法人産業技術総合研究所 | 微結晶シリコン薄膜トランジスタ |
| JP3416723B2 (ja) * | 1995-05-25 | 2003-06-16 | 独立行政法人産業技術総合研究所 | 非晶質シリコン薄膜トランジスタ及びその製法 |
| US6043507A (en) * | 1997-09-24 | 2000-03-28 | Micron Technology, Inc. | Thin film transistors and methods of making |
| GB9817745D0 (en) * | 1998-08-15 | 1998-10-14 | Philips Electronics Nv | Manufacture of electronic devices comprising thin-film circuit elements |
| US7402467B1 (en) | 1999-03-26 | 2008-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| DE19935046C2 (de) * | 1999-07-26 | 2001-07-12 | Schott Glas | Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung |
| DE10052131C2 (de) * | 2000-10-20 | 2003-02-13 | Advanced Micro Devices Inc | Verfahren zur Herstellung von Feldeffekttransistoren mit einer vollständig selbstjustierenden Technologie |
| JP3989761B2 (ja) | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
| US7038239B2 (en) | 2002-04-09 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| JP3989763B2 (ja) | 2002-04-15 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
| KR100968496B1 (ko) * | 2002-04-15 | 2010-07-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 제조방법 |
| US7256421B2 (en) | 2002-05-17 | 2007-08-14 | Semiconductor Energy Laboratory, Co., Ltd. | Display device having a structure for preventing the deterioration of a light emitting device |
| JP5594773B2 (ja) * | 2010-09-30 | 2014-09-24 | 国立大学法人九州大学 | 選択成膜方法、成膜装置、及び構造体 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| JPS5767020A (en) * | 1980-10-15 | 1982-04-23 | Agency Of Ind Science & Technol | Thin silicon film and its manufacture |
| US4523214A (en) * | 1981-07-03 | 1985-06-11 | Fuji Photo Film Co., Ltd. | Solid state image pickup device utilizing microcrystalline and amorphous silicon |
| JPH0620122B2 (ja) * | 1982-01-19 | 1994-03-16 | キヤノン株式会社 | 半導体素子 |
| JPS58219732A (ja) * | 1982-06-16 | 1983-12-21 | Tokyo Inst Of Technol | フツ素含有アモルフアス半導体の製造方法 |
| US4737379A (en) * | 1982-09-24 | 1988-04-12 | Energy Conversion Devices, Inc. | Plasma deposited coatings, and low temperature plasma method of making same |
| JPH0693509B2 (ja) * | 1983-08-26 | 1994-11-16 | シャープ株式会社 | 薄膜トランジスタ |
| JPS60200523A (ja) * | 1984-03-26 | 1985-10-11 | Agency Of Ind Science & Technol | シリコン薄膜の製造法 |
| US4670763A (en) * | 1984-05-14 | 1987-06-02 | Energy Conversion Devices, Inc. | Thin film field effect transistor |
| US4769338A (en) * | 1984-05-14 | 1988-09-06 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
| US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| US4597160A (en) * | 1985-08-09 | 1986-07-01 | Rca Corporation | Method of fabricating a polysilicon transistor with a high carrier mobility |
| JPH0746729B2 (ja) * | 1985-12-26 | 1995-05-17 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
| GB2185758B (en) * | 1985-12-28 | 1990-09-05 | Canon Kk | Method for forming deposited film |
| JPS62271418A (ja) * | 1986-05-20 | 1987-11-25 | Matsushita Electric Ind Co Ltd | 非晶質シリコン半導体素子の製造方法 |
| US4762808A (en) * | 1987-06-22 | 1988-08-09 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes |
| GB2215126B (en) * | 1988-02-19 | 1990-11-14 | Gen Electric Co Plc | Process for manufacturing a thin film transistor |
-
1988
- 1988-05-30 NL NL8801379A patent/NL8801379A/nl not_active Application Discontinuation
-
1989
- 1989-05-29 CA CA000600932A patent/CA1318417C/en not_active Expired - Fee Related
- 1989-05-29 JP JP1137313A patent/JPH02177368A/ja active Pending
- 1989-05-30 US US07/358,952 patent/US5102813A/en not_active Expired - Fee Related
- 1989-05-30 EP EP89201379A patent/EP0344863B1/de not_active Expired - Lifetime
- 1989-05-30 KR KR1019890007274A patent/KR0183964B1/ko not_active IP Right Cessation
- 1989-05-30 DE DE68926980T patent/DE68926980T2/de not_active Expired - Fee Related
- 1989-05-30 AT AT89201379T patent/ATE141715T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0344863A1 (de) | 1989-12-06 |
| JPH02177368A (ja) | 1990-07-10 |
| EP0344863B1 (de) | 1996-08-21 |
| KR900019245A (ko) | 1990-12-24 |
| KR0183964B1 (ko) | 1999-03-20 |
| DE68926980D1 (de) | 1996-09-26 |
| NL8801379A (nl) | 1989-12-18 |
| CA1318417C (en) | 1993-05-25 |
| US5102813A (en) | 1992-04-07 |
| DE68926980T2 (de) | 1997-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |