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ATA5422000A - Oximderivate und ihre verwendung als latente säuren - Google Patents

Oximderivate und ihre verwendung als latente säuren

Info

Publication number
ATA5422000A
ATA5422000A AT0054200A AT5422000A ATA5422000A AT A5422000 A ATA5422000 A AT A5422000A AT 0054200 A AT0054200 A AT 0054200A AT 5422000 A AT5422000 A AT 5422000A AT A5422000 A ATA5422000 A AT A5422000A
Authority
AT
Austria
Prior art keywords
oxime derivatives
latent acids
latent
acids
oxime
Prior art date
Application number
AT0054200A
Other languages
English (en)
Other versions
AT410262B (de
Original Assignee
Ciba Sc Holding Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27240245&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATA5422000(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ciba Sc Holding Ag filed Critical Ciba Sc Holding Ag
Publication of ATA5422000A publication Critical patent/ATA5422000A/de
Application granted granted Critical
Publication of AT410262B publication Critical patent/AT410262B/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G7/00—Selection of materials for use in image-receiving members, i.e. for reversal by physical contact; Manufacture thereof
    • G03G7/0006—Cover layers for image-receiving members; Strippable coversheets
    • G03G7/002—Organic components thereof
    • G03G7/0026—Organic components thereof being macromolecular
    • G03G7/004—Organic components thereof being macromolecular obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/32—Oximes
    • C07C251/62—Oximes having oxygen atoms of oxyimino groups esterified
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/63—Esters of sulfonic acids
    • C07C309/64—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms
    • C07C309/65—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C317/00—Sulfones; Sulfoxides
    • C07C317/26—Sulfones; Sulfoxides having sulfone or sulfoxide groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton
    • C07C317/32—Sulfones; Sulfoxides having sulfone or sulfoxide groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton with sulfone or sulfoxide groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
    • C07C323/23—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton
    • C07C323/46—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton having at least one of the nitrogen atoms, not being part of nitro or nitroso groups, further bound to other hetero atoms
    • C07C323/47—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton having at least one of the nitrogen atoms, not being part of nitro or nitroso groups, further bound to other hetero atoms to oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D319/00—Heterocyclic compounds containing six-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D319/10—1,4-Dioxanes; Hydrogenated 1,4-dioxanes
    • C07D319/14—1,4-Dioxanes; Hydrogenated 1,4-dioxanes condensed with carbocyclic rings or ring systems
    • C07D319/16—1,4-Dioxanes; Hydrogenated 1,4-dioxanes condensed with carbocyclic rings or ring systems condensed with one six-membered ring
    • C07D319/18—Ethylenedioxybenzenes, not substituted on the hetero ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/04—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
    • C07D333/06—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to the ring carbon atoms
    • C07D333/22—Radicals substituted by doubly bound hetero atoms, or by two hetero atoms other than halogen singly bound to the same carbon atom
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2602/00—Systems containing two condensed rings
    • C07C2602/36—Systems containing two condensed rings the rings having more than two atoms in common
    • C07C2602/42—Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing seven carbon atoms
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
AT0054200A 1999-03-31 2000-03-30 Oximderivate und ihre verwendung als latente säuren AT410262B (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP99810273 1999-03-31
EP99810287 1999-04-07
EP99810779 1999-08-30

Publications (2)

Publication Number Publication Date
ATA5422000A true ATA5422000A (de) 2002-07-15
AT410262B AT410262B (de) 2003-03-25

Family

ID=27240245

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0054200A AT410262B (de) 1999-03-31 2000-03-30 Oximderivate und ihre verwendung als latente säuren

Country Status (12)

Country Link
US (1) US6512020B1 (de)
KR (1) KR100700901B1 (de)
AT (1) AT410262B (de)
AU (1) AU766803B2 (de)
BE (1) BE1013627A3 (de)
CA (1) CA2302875A1 (de)
CH (1) CH694663A5 (de)
ES (1) ES2168953B1 (de)
IT (1) IT1318431B1 (de)
MY (1) MY116074A (de)
NL (2) NL1014545C2 (de)
SE (1) SE522082C2 (de)

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US6824954B2 (en) * 2001-08-23 2004-11-30 Jsr Corporation Sulfonyloxime compound, and radiation sensitive acid generator, positive type radiation sensitive resin composition and negative type radiation sensitive resin composition using same
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US6875480B2 (en) * 2002-02-27 2005-04-05 Industrial Technology Research Institute Method of enhancement of electrical conductivity for conductive polymer by use of field effect control
JP3841405B2 (ja) * 2002-03-29 2006-11-01 富士写真フイルム株式会社 ネガ型レジスト組成物
JP4560507B2 (ja) * 2003-02-19 2010-10-13 チバ ホールディング インコーポレーテッド ハロゲン化オキシム誘導体及び潜在的酸としてのそれらの使用
US7098463B2 (en) * 2003-03-03 2006-08-29 Heuris Pharma, Llc Three-dimensional dosimeter for penetrating radiation and method of use
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US7771913B2 (en) * 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP4548617B2 (ja) * 2006-06-09 2010-09-22 信越化学工業株式会社 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法
JP4623311B2 (ja) * 2006-06-14 2011-02-02 信越化学工業株式会社 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法
JP2009541254A (ja) * 2006-06-20 2009-11-26 チバ ホールディング インコーポレーテッド オキシムスルホネート及び潜酸としてのその使用
JP4509080B2 (ja) * 2006-09-28 2010-07-21 信越化学工業株式会社 シルセスキオキサン系化合物混合物及び加水分解性シラン化合物、その製造方法及びそれを用いたレジスト組成物並びにパターン形成方法及び基板の加工方法
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US7771914B2 (en) * 2006-10-17 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP4784760B2 (ja) * 2006-10-20 2011-10-05 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4288520B2 (ja) * 2006-10-24 2009-07-01 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
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JP5035562B2 (ja) * 2007-08-22 2012-09-26 信越化学工業株式会社 パターン形成方法
JP5019071B2 (ja) * 2007-09-05 2012-09-05 信越化学工業株式会社 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5013119B2 (ja) * 2007-09-20 2012-08-29 信越化学工業株式会社 パターン形成方法並びにこれに用いるレジスト材料
JP4993138B2 (ja) * 2007-09-26 2012-08-08 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP4513989B2 (ja) 2008-01-18 2010-07-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4844761B2 (ja) * 2008-01-18 2011-12-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4513990B2 (ja) 2008-01-18 2010-07-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP5131461B2 (ja) * 2008-02-14 2013-01-30 信越化学工業株式会社 高分子化合物、レジスト材料、及びパターン形成方法
JP5071658B2 (ja) * 2008-02-14 2012-11-14 信越化学工業株式会社 レジスト材料、レジスト保護膜材料、及びパターン形成方法
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JP4623324B2 (ja) * 2008-03-18 2011-02-02 信越化学工業株式会社 水酸基を有する単量体、高分子化合物、レジスト材料及びパターン形成方法
JP5245956B2 (ja) * 2008-03-25 2013-07-24 信越化学工業株式会社 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP4569786B2 (ja) 2008-05-01 2010-10-27 信越化学工業株式会社 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5381298B2 (ja) * 2008-05-12 2014-01-08 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4650644B2 (ja) * 2008-05-12 2011-03-16 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4743451B2 (ja) * 2008-09-05 2011-08-10 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4771101B2 (ja) * 2008-09-05 2011-09-14 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
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JP5177434B2 (ja) * 2009-04-08 2013-04-03 信越化学工業株式会社 パターン形成方法
US8691925B2 (en) 2011-09-23 2014-04-08 Az Electronic Materials (Luxembourg) S.A.R.L. Compositions of neutral layer for directed self assembly block copolymers and processes thereof
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US10457088B2 (en) 2013-05-13 2019-10-29 Ridgefield Acquisition Template for self assembly and method of making a self assembled pattern
US9093263B2 (en) 2013-09-27 2015-07-28 Az Electronic Materials (Luxembourg) S.A.R.L. Underlayer composition for promoting self assembly and method of making and using
US9181449B2 (en) 2013-12-16 2015-11-10 Az Electronic Materials (Luxembourg) S.A.R.L. Underlayer composition for promoting self assembly and method of making and using
KR101491975B1 (ko) 2014-03-14 2015-02-11 (주)휴넷플러스 화학 증폭형 포지티브 감광성 경화 수지 조성물, 이를 이용한 경화막의 제조 방법 및 경화막을 포함하는 전자소자
CN107207456B (zh) 2015-02-02 2021-05-04 巴斯夫欧洲公司 潜酸及其用途
TWI754661B (zh) 2016-08-18 2022-02-11 德商馬克專利公司 用於自組裝應用之聚合物組合物
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BE1013627A3 (fr) 2002-05-07
ITMI20000662A0 (it) 2000-03-30
CH694663A5 (de) 2005-05-31
ES2168953A1 (es) 2002-06-16
SE522082C2 (sv) 2004-01-13
NL1014545A1 (nl) 2000-10-03
ITMI20000662A1 (it) 2001-09-30
NL1019981C2 (nl) 2002-10-03
NL1019981A1 (nl) 2002-04-11
AT410262B (de) 2003-03-25
SE0001090D0 (sv) 2000-03-28
IT1318431B1 (it) 2003-08-25
KR20000063080A (ko) 2000-10-25
KR100700901B1 (ko) 2007-03-29
US6512020B1 (en) 2003-01-28
SE0001090L (sv) 2000-10-01
AU766803B2 (en) 2003-10-23
MY116074A (en) 2003-10-31
ES2168953B1 (es) 2003-10-16
AU2420000A (en) 2000-10-05
NL1014545C2 (nl) 2002-02-26
CA2302875A1 (en) 2000-09-30

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