Development and Implementation of Algorithms for an Intelligent IGBT Gate Driver Using a Low-Cost Microcontroller
<p>IGBT gate driver: (<b>a</b>) photo and (<b>b</b>) functional diagram.</p> "> Figure 1 Cont.
<p>IGBT gate driver: (<b>a</b>) photo and (<b>b</b>) functional diagram.</p> "> Figure 2
<p>Timing diagrams of the optical communication signals (blue—input; red—feedback): (<b>a</b>) input signal; (<b>b</b>) normal operation feedback; (<b>c</b>) no gate current or gate voltage exceeding fault feedback; (<b>d</b>) short-circuit or overload current protection feedback; and (<b>e</b>) power supply failure feedback.</p> "> Figure 3
<p>States and substates of the finite-state machine (green—turned on state; red—turned off state; blue—occurs in both states).</p> "> Figure 4
<p>Timing diagrams of algorithm implementation in the microcontroller (blue—control command; red—feedback signal).</p> "> Figure 5
<p>Timing diagram of feedback signal implementation by PWM module (blue—control command; red—feedback signal).</p> "> Figure 6
<p>Functional diagram of the test bench.</p> "> Figure 7
<p>Transient signals of the gate driver in normal operation mode: yellow—control signal; blue—gate voltage; red—collector–emitter voltage; green—driver feedback signal. (<b>a</b>) Enlarged picture. (<b>b</b>) Narrowed picture.</p> "> Figure 8
<p>Transient signals in the short-circuit operation mode: yellow—control signal; blue—gate voltage; red—collector-emitter voltage; green—driver feedback signal.</p> "> Figure 9
<p>(<b>a</b>) Transient signals of the gate driver in normal operation mode. (<b>b</b>) Transient signals of the gate driver in the case of disconnecting the driver pin from the gate of the transistor: yellow—control signal; blue—driver output gate voltage; red—gate current; green—driver feedback signal.</p> "> Figure 9 Cont.
<p>(<b>a</b>) Transient signals of the gate driver in normal operation mode. (<b>b</b>) Transient signals of the gate driver in the case of disconnecting the driver pin from the gate of the transistor: yellow—control signal; blue—driver output gate voltage; red—gate current; green—driver feedback signal.</p> "> Figure 10
<p>(<b>a</b>) The driver feedback signal sets the fault in the case of a voltage supply, +15 V, that is out of range: blue—supply voltage; green—driver feedback signal. (<b>b</b>) The process of establishing the voltage supply, +15 V, and resetting the driver fault: blue—supply voltage; green—driver feedback signal.</p> "> Figure 10 Cont.
<p>(<b>a</b>) The driver feedback signal sets the fault in the case of a voltage supply, +15 V, that is out of range: blue—supply voltage; green—driver feedback signal. (<b>b</b>) The process of establishing the voltage supply, +15 V, and resetting the driver fault: blue—supply voltage; green—driver feedback signal.</p> ">
Abstract
:Featured Application
Abstract
1. Introduction
2. IGBT Gate Driver Hardware Solutions
3. Algorithms for Microcontroller
4. Experimental Results
5. Discussion and Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
- Dmitrievskii, V.; Prakht, V.; Anuchin, A.; Kazakbaev, V. Traction Synchronous Homopolar Motor: Simplified Computation Technique and Experimental Validation. IEEE Access 2020, 8, 185112–185120. [Google Scholar] [CrossRef]
- Dmitrievskii, V.; Prakht, V.; Kazakbaev, V.; Anuchin, A. Comparison of Interior Permanent Magnet and Synchronous Homopolar Motors for a Mining Dump Truck Traction Drive Operated in Wide Constant Power Speed Range. Mathematics 2022, 10, 1581–1591. [Google Scholar] [CrossRef]
- Prakht, V.; Dmitrievskii, V.; Anuchin, A.; Kazakbaev, V. Inverter Volt-Ampere Capacity Reduction by Optimization of the Traction Synchronous Homopolar Motor. Mathematics 2021, 9, 2859–2868. [Google Scholar] [CrossRef]
- Chen, H.; Xie, G. 80C31 single chip computer control of the switched reluctance motor for locomotive in coal mines. In Proceedings of the ICEMS’2001. Proceedings of the Fifth International Conference on Electrical Machines and Systems (IEEE Cat. No.01EX501), Shenyang, China, 18–20 August 2001. [Google Scholar]
- Chen, H.; Zhang, D.; Meng, X. Analysis of three-phase 12/8 structure switched reluctance motor drive. In Proceedings of the ISIE 2001. 2001 IEEE International Symposium on Industrial Electronics (Cat. No.01TH8570), Pusan, Republic of Korea, 12–16 June 2001. [Google Scholar]
- Xu, S.; Chen, H.; Cheng, H.; Yang, S. Research on parallel switching device current sharing of Switched Reluctance Motor. In Proceedings of the 2017 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus), St. Petersburg and Moscow, Russia, 1–3 February 2017. [Google Scholar]
- Hill, H.C.; Legue, J.B.S. Electrical equipment for oil-field operations. Electr. Eng. 1931, 2, 753–754. [Google Scholar] [CrossRef]
- Hefner, A.R.; Blackburn, D.L.; Galloway, K.F. The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT). IEEE Trans. Nucl. Sci. 1986, 33, 1428–1434. [Google Scholar] [CrossRef]
- Hefner, A.R.; Blackburn, D.L. Performance trade-off for the Insulated Gate Bipolar Transistor: Buffer layer versus base lifetime reduction. In Proceedings of the 1986 17th Annual IEEE Power Electronics Specialists Conference, Vancouver, BC, Canada, 23–27 June 1986. [Google Scholar]
- Nakagawa, A.; Nakamura, S.; Shinohe, T. Rapid Convergence Bipolar-MOS Composite Device Model—Tonadder—And Its Application to Bipolar-Mode MOSFETs(IGBT). In Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Dublin, Ireland, 17–19 June 1987. [Google Scholar]
- Horii, K.; Yano, H.; Hata, K.; Wang, K.; Mikami, K.; Hatori, K.; Tanaka, K.; Saito, W.; Takamiya, M. Large Current Output Digital Gate Driver for 6500 V, 1000 A IGBT Module to Reduce Switching Loss and Collector Current Overshoot. IEEE Trans. Power Electron. 2023, 13, 8075–8088. [Google Scholar] [CrossRef]
- Parker, M.; Sahin, I.; Mathieson, R.; Finney, S.; Judge, P.D. Investigation into Active Gate-Driving Timing Resolution and Complexity Requirements for a 1200 V 400 A Silicon Carbide Half Bridge Module. IEEE Open J. Power Electron. 2023, 4, 161–175. [Google Scholar] [CrossRef]
- Lou, Z.; Mamee, T.; Hata, K.; Takamiya, M.; Nishizawa, S.-I.; Saito, W. IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control. IEEE Access 2023, 11, 6632–6640. [Google Scholar] [CrossRef]
- Michel, L.; Boucher, X.; Cheriti, A.; Sicard, P.; Sirois, F. FPGA Implementation of an Optimal IGBT Gate Driver Based on Posicast Control. IEEE Trans. Power Electron. 2013, 28, 2569–2575. [Google Scholar] [CrossRef]
- Nouman, Z.; Knobloch, J.; Klima, B. FPGA usage for power inverters diagnostics. In Proceedings of the IECON 2013—39th Annual Conference of the IEEE Industrial Electronics Society, Vienna, Austria, 10–13 November 2013. [Google Scholar]
- Texas Instruments. TMS320F28002x Real-Time Microcontrollers Datasheet (Rev. B) (qeeniu.net). Available online: https://qeeniu.net/lit/ds/symlink/tms320f280025.pdf?ts=1692242909088 (accessed on 29 March 2024).
- Tao, H.; Peng, T.; Yang, C.; Yin, S.; Chen, Z.; Fan, X. A Diagnosis method for IGBT and Current Sensor Faults of Two-level Inverter Used in Traction Systems. In Proceedings of the 2021 CAA Symposium on Fault Detection, Supervision, and Safety for Technical Processes (SAFEPROCESS), Chengdu, China, 17–18 December 2021. [Google Scholar]
- Mohamed Sathik, M.H.; Sundararajan, P.; Sasongko, F.; Pou, J.; Vaiyapuri, V. Short Circuit Detection and Fault Current Limiting Method for IGBTs. IEEE Trans. Device Mater. Reliab. 2020, 20, 686–693. [Google Scholar] [CrossRef]
- Power Integrations. Available online: https://www.power.com/sites/default/files/documents/1SP0635_Manual.pdf (accessed on 29 March 2024).
- Zhukov, A.; Ledovskikh, A.; Kuraev, N.; Ionov, A.; Fedorova, K.; Anuchin, A. Development of an IGBT Driver Test Bench. In Proceedings of the 2023 XIX International Scientific Technical Conference Alternating Current Electric Drives (ACED), Ekaterinburg, Russian, 23–25 May 2023. [Google Scholar]
Disclaimer/Publisher’s Note: The statements, opinions and data contained in all publications are solely those of the individual author(s) and contributor(s) and not of MDPI and/or the editor(s). MDPI and/or the editor(s) disclaim responsibility for any injury to people or property resulting from any ideas, methods, instructions or products referred to in the content. |
© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Share and Cite
Zolotov, A.R.; Ledovskikh, A.A.; Zhukov, A.N.; Zharkov, A.A.; Kazemirova, Y.K.; Anuchin, A.S. Development and Implementation of Algorithms for an Intelligent IGBT Gate Driver Using a Low-Cost Microcontroller. Appl. Sci. 2024, 14, 4247. https://doi.org/10.3390/app14104247
Zolotov AR, Ledovskikh AA, Zhukov AN, Zharkov AA, Kazemirova YK, Anuchin AS. Development and Implementation of Algorithms for an Intelligent IGBT Gate Driver Using a Low-Cost Microcontroller. Applied Sciences. 2024; 14(10):4247. https://doi.org/10.3390/app14104247
Chicago/Turabian StyleZolotov, Artemy R., Artur A. Ledovskikh, Alexandr N. Zhukov, Alexandr A. Zharkov, Yulia K. Kazemirova, and Alecksey S. Anuchin. 2024. "Development and Implementation of Algorithms for an Intelligent IGBT Gate Driver Using a Low-Cost Microcontroller" Applied Sciences 14, no. 10: 4247. https://doi.org/10.3390/app14104247