Seminar Guide Miss Latha R Nair Assistant Professor Computer Science & Engineering Soe, Cusat
Seminar Guide Miss Latha R Nair Assistant Professor Computer Science & Engineering Soe, Cusat
Seminar Guide Miss Latha R Nair Assistant Professor Computer Science & Engineering Soe, Cusat
SEMINAR GUIDE
PRESENTED BY
TRIPTI KUMARI
ASSISTANT PROFESSOR
REG NO 12110081
SOE, CUSAT
ROLL NO - 79
CONTENTS
INTRODUCTION
WHY 3D
BENEFITS OF 3D INTEGRATION
ARCHITECTURE
MANUFACTURING
PERFORMANCE CHARACTERISTICS
CHALLENGES AND ISSUES
CONCLUSIONS
REFERENCES
INTRODUCTION
EVOLUTION IN INTEGRATION
WHY 3D ?
Multi-core are
bandwidth-hungry:
Limited caches
Multi-threading
Virtualization
2.5D VS 3D IC
COMMUNICATION BOTTLENECK
Architectural issues
Traditional shared buses do not scale
well bandwidth saturation
Chip IO is pad limited
Physical issues
On-chip Interconnects become
increasingly slower w.r.t. logic
IOs are increasingly expensive
Consequences
Performance losses
Power/Energy cost
Design closure issues or infeasibility
BENEFITS OF 3D INTEGRATION
Reduced wire length
Total wire length
Larger circuits produce
more improvement
Decreased interconnect
delay
ARCHITECTURE
ARCHITECTURE CONT
IEE
E
ARCHITECTURE CONT
MANUFACTURING
MONOLITHIC
A technology breakthrough allows the fabrication of
WAFER-ON-WAFER
Electronic
components are
built on two or
more
semiconductor
wafers, which
are then aligned,
bonded, and
diced into 3D
ICs.
Detailed view
Generalized view
SOI
wafers
with bulk
substrate
removed
Layer 5
Inter-layer
bonds
Layer 4
Layer 3
1m
Layer 2
Metal level
of wafer 1
Device
level 1
Bulk wafer
Layer 1
Bulk Substrate
10m
500m
DIE-ON-WAFER
Electronic
INTER-LAYER
INTERCONNE
CT
DICE
WAFER
DIE ON DIE
Electronic components
are built on multiple
dice, which are then
aligned and bonded.
3D FABRICATION TECHNOLOGIES
PERFORMANCE CHARACTERISTICS
Timing
Energy
With shorter interconnects in 3D ICs, both switching
energy and cycle time are expected to be reduced
PERFORMANCE CHARACTERISTICS
CONT
Timing
In current
technologies,
timing is
interconnect
driven.
Reducing
interconnect
length in designs
can dramatically
reduce RC delays
and increase chip
performance
The graph below
shows the results
PERFORMANCE CHARACTERISTICS
CONT
Energy
Wire length
reduction has
an impact on
the cycle
time and the
energy
dissipation
Energy
dissipation
decreases
with the
Clock Root
high number
of vertical vias
Electro thermal and Thermo-mechanical effects between various active layers can influence
electro-migration and chip performance
Die yield issues may arise due to mismatches between die yields of different layers, which
affect net yield of 3D chips.
RELIABILITY ENHANCEMENT
TSV check on reset
Control use
dedicated Vias in
order to establish
which vias are
corrupted.
If 1, 2 and 3 TSVs are
OK, the control set
the enable signal
set_to and set_from:
broken path are
skipped!
Pads routing shift as
show in the figure
Need to define The
CONCLUSION
3D IC design is a relief to
interconnect driven IC design.
REFERENCES
[1] J. Davis, et al., "Interconnect limits on gigascale
integration (GSI) in the 21st century," Proceedings of
the IEEE , vol.89, no.3, pp.305-324, Mar 2001.
[2] Banerjee, K.; Souri, S.J.; Kapur, P.; Saraswat, K.C.; ,
"3-D ICs: a novel chip design for improving deepsubmicrometer interconnect performance and systemson-chip integration," Proceedings of the IEEE , vol.89,
no.5, pp.602-633, May 2001.
THANKYO
U
QUESTIONS
?