The presentation discusses high voltage MOSFETs, specifically LDMOS and VMOS transistors. It introduces the structures of LDMOS and VMOS transistors, which allow for high voltage blocking capabilities. Key aspects covered include the drift region, fabrication methods, modeling strategies to analyze effects like quasi-saturation and self-heating, and applications in power amplifiers. LDMOS and VMOS transistors are highlighted as important devices for commercial base station power amplifiers due to their high breakdown voltage and efficiency.
The presentation discusses high voltage MOSFETs, specifically LDMOS and VMOS transistors. It introduces the structures of LDMOS and VMOS transistors, which allow for high voltage blocking capabilities. Key aspects covered include the drift region, fabrication methods, modeling strategies to analyze effects like quasi-saturation and self-heating, and applications in power amplifiers. LDMOS and VMOS transistors are highlighted as important devices for commercial base station power amplifiers due to their high breakdown voltage and efficiency.
The presentation discusses high voltage MOSFETs, specifically LDMOS and VMOS transistors. It introduces the structures of LDMOS and VMOS transistors, which allow for high voltage blocking capabilities. Key aspects covered include the drift region, fabrication methods, modeling strategies to analyze effects like quasi-saturation and self-heating, and applications in power amplifiers. LDMOS and VMOS transistors are highlighted as important devices for commercial base station power amplifiers due to their high breakdown voltage and efficiency.
The presentation discusses high voltage MOSFETs, specifically LDMOS and VMOS transistors. It introduces the structures of LDMOS and VMOS transistors, which allow for high voltage blocking capabilities. Key aspects covered include the drift region, fabrication methods, modeling strategies to analyze effects like quasi-saturation and self-heating, and applications in power amplifiers. LDMOS and VMOS transistors are highlighted as important devices for commercial base station power amplifiers due to their high breakdown voltage and efficiency.
The presence of a low-doped drift region in addition helps to sustain
high-voltages.
The charge carriers flow from source to drain through the channel and the drift region.
HVMOS structure
Types of HVMOS:1. LDMOS (The Laterally Diffused MOSFET )
2. V- Groove MOS (VMOS)
LDMOS (The Laterally Diffused MOSFET )
The Laterally Diffused MOSFET (LDMOS) is a power MOSFET designed for low on-resistance and high blocking voltage. In a lateral high-voltage MOS transistor, the lightly doped drift region is extended laterally and current flows along the horizontal direction between source and drain. A diffused p-type channel region is fabricated in a low-doped n-type drain region.
Fabrication fabrication requires a diffusion. The device can be fabricated by diffusion as well as ion implantation. The p-type region is formed first, followed by shallow p+ and n+ regions.. Eliminates the body effect:- The p+-region contacts the p-type body, which is typically shorted to the source, thereby eliminating the body effect
LDMOS structure
MODELLING STRATEGY DRIFT RESISTANCE MODEL:-
DRIFT RESISTANCE MODEL
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DC BEHAVIOUR OF LDMOS
ANAMALOUS EFFECTS QUASI SATURATION SELF HEATING
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Quasi saturation effect
Low doping concentration in the drift region of high-voltage LDMOS produces a quasi saturation region. The quasi-saturation state appears at the point when the incoming carrier density exceeds the doping level of the drift. if the velocity saturation occurs first in the drift region instead of the channel region the quasi-saturation effect appears in the device characteristics. The reason for the occurrence of quasi-saturation at high-gate voltages is that the conductivity of the channel region is high, whereas that of the thin-gate-oxide drift region is low due to depletion in the drift region. For further increasing drain voltages, the depletion layer widens, and the current through the drift region becomes conned to a limited effective cross section ,which leads to velocity saturation in the drift region
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QUASI SATURATION Characteristics
13 Output
14 Minimization Quasi saturation effects can be minimized or even eliminated by increasing the doping level in the drift region.
SELF HEATING
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P = IDS VDS
IDS = nCoxW/L (VGS VT)2
Self -heating effect
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With the device scaling and increasing integration density self heating becomes one of the major issues in device design.
Due to the internal resistance (on-resistance).
In high-voltage devices the self-heating effect no longer remains
Insignificant
With the increase of the internal device temperature due to selfheating the charge carriers mobility decreases because of increased lattice scattering. This causes a negative resistance effect in the characteristic output curves where the current starts falling with increasing drain voltage
IDS vs. VDS of 40V LDMOS transistor
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M O D ELLIN G O F SELF H EATIN G
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EFFECT
Applications
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LDMOS devices, with their high breakdown voltage,
provide excellent power, linearity and efficiency performance up to 3 GHz. For these
reasons, LDMOS is nowadays the leading technology for
commercial base station power amplifiers . The LDMOS structure combines a short channel length with high breakdown voltage as desired for high power RF amplifiers in base stations of wireless communications systems UHF and L-band power amplifiers
Problem with normal MOS structure
20 In low-power applications there is no reason why MOSFETs can't be used anywhere a bipolar transistor can (they are, in fact, more versatile than bipolars in low-power applications). But, therein lies the rub power. It is very difficult (and expensive) to make a MOSFET which can pass large currents: the main reason being the horizontal make-up of ordinary MOSFETs. Bipolar transistors have vertical current flow and can pass larger currents because of it. Figure shows the theoretical cross-section of a bipolar transistor and a similar cross-section of a MOSFET is shown in. Current flow in the bipolar is vertically upwards from collector to emitter and the large area through which the current passes allows large currents. MOSFET current flow is from left to right (drain to source) and the small area of current flow means smaller currents than in a similar-sized bipolar transistor.
SOLUTION- V-MOS TRANSISTORS
2. VMOS Transistors
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The VMOS transistor, named after the V-shaped groove, is a vertical MOSFET with high current handling capability as well as high blocking voltage. It consists of a double diffused n+/p layer, which is cut by a V-shaped groove . The substrate acts as a drift region. The vertical structure allows the use of a low-doped drain region, which results in a high blocking voltage. The V-groove is easily fabricated by anisotropically etching a (100) silicon surface using a concentrated KOH solution. The V-groove is then coated with a gate oxide, followed by the gate electrode. As the V-groove cuts through the double diffused layer, it creates two vertical MOSFETs, one on each side of the groove. The combination of the V-groove with the double diffused layers results in a short channel length, which is determined by the thickness of the p-type layer.
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V-MOS structure
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For low drain voltage, channel and drift regions both contribute to the on-resistance. For large gate biases, the channel resistance and, hence, the total on-resistance reduces until a point where the on-resistance becomes independent of further change in gate bias. At this stage, the on-resistance becomes almost equal to the drift resistance. A small value of on-resistance is always desirable to achieve low power dissipation (P dissipation), given
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Applications:VMOS FETs overcome the power problems normally associated with FETs. Current flow is now vertically upwards, from drain to source, in much the same way as in bipolar transistors. The larger chip area means large current. Hence we have transistors exhibiting all the advantages of MOSFETs without the usual power limits. VMOS FETs also have some other very interesting advantages: low ON resistance good for audio switching purposes. Low ON resistances and high OFF resistances make VMOS FETs ideal for use in audio switching networks. Figure shows a simple on/off audio switch controlled by the voltage on the transistor gate: + 15V turns the switch on and OV turns it off. Audio signals can only pass in one direction, from drain to source, but any audio voltage of about 1/2V to + 5V can be switched. The extremely high gate-input resistance of VMOSFETs means that they can be switched by virtually any control method, such as CMOS, TTL, op-amps and soon. power amplification as high as 10*6 . positive temperature coefficient on the ON resistance as the temperature goes up the transistor passes less current, therefore remaining thermally stable. easily operated in parallel to increase overall current flow due to the inherent thermal stability no 'current hogging' by one device occurs.
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Conclusion & Future Trends
LDMOS and VMOS devices, with their high breakdown voltage, provide excellent power, linearity and efficiency performance up to 3 GHz. For these reasons, these are nowadays the leading technology for commercial base station power amplifiers These device are currently the device of choice for numerous UHF and L-band power amplifiers in broadcast, communication and radar systems. Their capability to go beyond 3 GHz Is recently investigated.
