YFW5N04MI

40V N-CHANNEL ENHANCEMENT MODE MOSFET

MAIN CHARACTERISTICS
ID 5.0A
VDSS 40V
RDSON-typ(@VGS=10V) ＜37mΩ(Type:30 mΩ)

Application
 Battery protection
 Load switch
 Uninterruptible power supply

SOT23-3L

Product Specification Classification

Part Number Package Marking Pack
YFW5N04MI SOT23-3L MD4-5A 3000PCS/Tape

Maximum Ratings at Tc=25°C unless otherwise specified

Characteristics Symbols Value Units

Drain-Source Voltage VDS 40 V

Gate - Source Voltage VGS ±20 V
1
Continuous Drain Current, VGS @ 10V @TA=25℃ ID 5.0 A
1
Continuous Drain Current, VGS @ 10V @TA=100℃ ID 3.5 A
2
Pulsed Drain Current IDM 14 A
4
Total Power Dissipation @TA=25℃ PD 1 W
Storage Temperature Range TSTG -55 to +150 °C
Operating Junction Temperature Range TJ -55 to +150 °C
1
Thermal Resistance Junction-ambient RθJA 125 °C/W
1
Thermal Resistance Junction-Case RθJC 80 °C/W

www.yfwdiode.com Rev:2021Y1 1/5 GuangDong YFW Electronics Co, Ltd.

 YFW5N04MI
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics Test Condition Symbols Min Typ Max Units
Drain-Source Breakdown Voltage VGS=0V, ID=250uA BVDSS 40 - - V
BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA △BVDSS/△TJ - 0.032 - V/°C
VGS=10V, ID=4A - 30 37
Static Drain-Source On-Resistance 2 RDS(ON) mΩ
VGS=4.5V, ID=3A - 40 50

Gate -Threshold Voltage VGS(th) 1.0 1.5 2.5 V

VDS=VGS, ID=250uA
VGS(th) Temperature Coefficient △VGS(th) - -4.5 - mV/°C
VDS=32V , VGS=0V , TJ=25℃ - - 1
Drain-Source Leakage Current IDSS μA
VDS=32V , VGS=0V , TJ=55℃ - - 5

Gate –Source Leakage Current VGS=±20V, VDS=0V IGSS - - ±100 nA

Forward Transconductance VDS=5V , ID=4A gfs - 8 - S
Gate Resistance VDS=0V , VGS=0V , f=1MHz Rg - 2.4 4.8 Ω
Total Gate Charge(4.5V) Qg - 5 -
VDS=15V
Gate-Source Charge VGS=4.5V Qgs - 1.54 - nC
ID=3A
Gate-Drain Charge Qgd - 1.84 -

Turn-on delay time td(on) - 7.8 -

VDD =15V
Rise Time VGS=10V Tr - 2.1 -
ns
Turn-Off Delay Time RG=3.3 td(OFF) - 29 -
ID=1A
Fall Time tf - 2.1 -

Input Capacitance Ciss - 452 -

VDS=15V
Output Capacitance VGS=0V Coss - 51 - PF
f=1.0MHz
Reverse Transfer Capacitance Crss - 38 -
1,4
Continuous Source Current IS - - 4.5 A
VG=VD=0V , Force Current
Pulsed Source Current2,4 ISM - - 14 A
2
Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ VSD - - 1.2 V
Note :
1 .The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3 .The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

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 YFW5N04MI
Ratings and Characteristic Curves

Typical Characteristics
15 50
ID=4A

12 VGS=10V
ID Drain Current (A)

VGS=7V
45

RDSON (mΩ)
VGS=5V
9

VGS=4.5V VGS=3V
6
40

0 35
0 0.5 1 1.5 2 4 6 8 10
VDS , Drain-to-Source Voltage (V) VGS (V)

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source

8 10 Voltage
VDS=15V
VGS Gate to Source Voltage (V)

ID=3A
7.5
IS Source Current(A)

4 5

TJ=150℃ TJ=25℃

2 2.5

0 0
0.00 0.25 0.50 0.75 1.00 0 2.5 5 7.5 10
VSD , Source-to-Drain Voltage (V) QG , T o t a l G a t e C h a r g e ( n C )

Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics

diode
1.8 1.8
Normalized On Resistance

1.4
Normalized VGS(th) (V)

1.4

1 1.0

0.6 0.6

0.2 0.2
-50 0 50 100 150 -50 0 50 100 150
TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃)

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

www.yfwdiode.com Rev:2021Y1 3/5 GuangDong YFW Electronics Co, Ltd.

 YFW5N04MI
Ratings and Characteristic Curves

1000 100. 00
F=1.0MHz

Ciss 100us
10. 00
Capacitance (pF)

ID (A)
1 0 ms
100
1. 00
1 0 0 ms
Coss

1s
Crss 0. 10

TA= 2 5℃
DC
Single Puls e
10
0. 01
1 5 9 13 17 21 25
0. 1 1 10 100
VDS , Drain to Source Voltage (V) VDS (V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1
DUTY=0.5
Normalized Thermal Response (R θJA)

0.2
0.1 0.1
0.05

0.02
0.01 0.01

PDM
TON
0.001 SINGLE PULSE T
D = TON/T
TJpeak = TC + PDM x RθJC

0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

VDS
90%

10%
VGS
Td(on) Tr Td(off) Tf

Ton Toff

Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

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 YFW5N04MI
Package Outline Dimensions Millimeters

SOT23-3L

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
A2 1.050 1.150 0.041 0.045
b 0.300 0.500 0.012 0.020
c 0.100 0.200 0.004 0.008
D 2.820 3.020 0.111 0.119
E1 1.500 1.700 0.059 0.067
E 2.650 2.950 0.104 0.116
e 0.950(BSC) 0.037(BSC)
e1 1.800 2.000 0.071 0.079
L 0.300 0.600 0.012 0.024
θ 0° 8° 0° 8°

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