AON7506

30V N-Channel MOSFET

General Description Product Summary

• Latest Trench Power MOSFET technology VDS 30V

• Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A
• Low Gate Charge RDS(ON) (at VGS=10V) < 9.8mW
• High Current Capability
RDS(ON) (at VGS=4.5V) < 15.8 mW
• RoHS and Halogen-Free Compliant

Application 100% UIS Tested

100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
• See Note I

DFN 3x3 EP D
Top View Bottom View Top View

S 1 8 D
S 2 7 D
S 3 6 D
G 4 5 D
G

Pin 1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 12
ID
Current G TC=100°C 9.4 A
C
Pulsed Drain Current IDM 48
Continuous Drain TA=25°C 12
IDSM A
CurrentG TA=70°C 10.5
C
Avalanche Current IAS 20 A
C
Avalanche energy L=0.05mH EAS 10 mJ
VDS Spike 100ns VSPIKE 36 V
TC=25°C 20.5
PD W
Power Dissipation B TC=100°C 8
TA=25°C 3.1
PDSM W
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W
RqJA
Maximum Junction-to-Ambient A D Steady-State 60 75 °C/W
Maximum Junction-to-Case Steady-State RqJC 5 6 °C/W

Rev1.1: October 2023 www.aosmd.com Page 1 of 6

 AON7506

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 1.8 2.3 V
VGS=10V, ID=12A 6.2 8 9.8
mW
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 11 13.5
VGS=4.5V, ID=10A 10.2 13 15.8 mW
gFS Forward Transconductance VDS=5V, ID=12A 45 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.73 1 V
G
IS Maximum Body-Diode Continuous Current 12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 542 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 233 pF
Crss Reverse Transfer Capacitance 31 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1 2 3 W
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 9 12.2 nC
Qg(4.5V) Total Gate Charge 4.3 5.8 nC
VGS=10V, VDS=15V, ID=12A
Qgs Gate Source Charge 2.2 nC
Qgd Gate Drain Charge 1.7 nC
tD(on) Turn-On DelayTime 4 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.25W, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=3W 18 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/ms 9.7 ns
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/ms 11.5 nC
A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. For application requiring slow >1ms turn-on/turn-off, please consult AOS FAE for proper product selection.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

Rev1.1: October 2023 www.aosmd.com Page 2 of 6

 AON7506

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 50
10V 4.5V VDS=5V
4V
40 6V 40

30 30
ID (A)

ID(A)
3.5V

20 20
125°C
10 10
VGS=3V 25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

16 1.6
Normalized On-Resistance
14 VGS=4.5V
VGS=10V
1.4 ID=12A
12
RDS(ON) (mW)

17
10 1.2 5
2
8
VGS=4.5V10
VGS=10V 1
ID=10A
6

4 0.8
0 3 6 9 12 15 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction
18 Temperature
Gate Voltage (Note E)
(Note E)

25 1.0E+01
ID=12A

20 1.0E+00
40
1.0E-01 125°C
RDS(ON) (mW)

15 125°C
IS (A)

1.0E-02
10 25°C
1.0E-03
5 25°C
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.20.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev1.1: October 2023 www.aosmd.com Page 3 of 6

 AON7506

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 800
VDS=15V
ID=12A
8
600 Ciss

Capacitance (pF)
VGS (Volts)

6
400
4 Coss

200
2

Crss
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 150
TJ(Max)=150°C
10ms TC=25°C
RDS(ON) 10ms
10.0 limited
100ms 100
Power (W)
ID (Amps)

1.0 1ms
DC 100ms
TJ(Max)=150°C
TC=25°C 50
0.1

0.0 0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJC Normalized Transient

TJ,PK=TC+PDM.ZqJC.RqJC
Thermal Resistance

RqJC=6°C/W
1

PD
0.1
Single Pulse
Ton
T

0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev1.1: October 2023 www.aosmd.com Page 4 of 6

 AON7506

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20

25
Power Dissipation (W)

15

Current rating ID(A)

20

15 10

10
5
5

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°C) TCASE (°C)
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJA Normalized Transient

TJ,PK=TA+PDM.ZqJA.RqJA
Thermal Resistance

1 RqJA=75°C/W 40

0.1

PD
0.01
Single Pulse Ton
T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

Rev1.1: October 2023 www.aosmd.com Page 5 of 6

 AON7506

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev1.1: October 2023 www.aosmd.com Page 6 of 6