[go: up one dir, main page]
Scribd
Upload
1 views4 pages

2SC3309

Uploaded by

bali tenna

npn transistor

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt

2SC3309

Uploaded by

bali tenna
1 views4 pages
npn transistor

Copyright

© © All Rights Reserved

Available Formats

PDF, TXT or read online from Scribd

Did you find this document useful?

Is this content inappropriate?

npn transistor

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
1 views4 pages

2SC3309

Uploaded by

bali tenna
npn transistor

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
You are on page 1/ 4

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3309

DESCRIPTION
·With TO-220Fa package
·High collector breakdown voltage
·Excellent switching times

APPLICATIONS
·Switching regulators and high voltage
switching applications
·High speed DC-DC converter application

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-220Fa) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 500 V

VCEO Collector-emitter voltage Open base 400 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current (DC) 2 A

ICM Collector current-peak 4 A

IB Base current 0.5 A

Ta=25 2.0
PC Collector dissipation W
TC=25 20

Tj Junction temperature 150

Tstg Storage temperature -50~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3309

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V

V(BR)CBO Collector -base breakdown voltage IE=1mA; IE=0 500 V

VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V

VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.5 V

ICBO Collector cut-off current VCB=400V; IE=0 100 µA

IEBO Emitter cut-off current VEB=7V; IC=0 1 mA

hFE-1 DC current gain IC=0.1A ; VCE=5V 20

hFE-2 DC current gain IC=1A ; VCE=5V 8

Switching times

tr Rise time 1.0 µs


IB1=-IB2=0.08A
ts Storage time VCC<200V;RL=250> 2.5 µs
PW=20µs

tf Fall time 1.0 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3309

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

3
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3309

You might also like