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2SC3831

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2SC3831

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Deleste Broacast
15 views4 pages
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transiitor

Copyright:

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15 views4 pages

2SC3831

Uploaded by

Deleste Broacast
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© All Rights Reserved
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3831

DESCRIPTION
·With TO-3PN package
·High voltage
·High speed switching

APPLICATIONS
·For switching regulator and general
purpose applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 600 V

VCEO Collector-emitter voltage Open base 500 V

VEBO Emitter-base voltage Open collector 10 V

IC Collector current 10 A

ICP Collector current-pulse 20 A

IB Base current 4 A

PC Collector power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3831

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 500 V

VCEsat Collector-emitter saturation voltage IC=5A IB=1.0A 0.5 V

VBEsat Base-emitter saturation voltage IC=5A ;IB=1.0A 1.3 V

ICBO Collector cut-off current VCB=600V; IE=0 1 mA

IEBO Emitter cut-off current VEB=10V; IC=0 0.1 mA

hFE DC current gain IC=5A ; VCE=4V 10 30

fT Transition frequency IC=1A ; VCE=12V 8 MHz

COB Output capacitance f=1MHz ; VCB=10V 105 pF

Switching times

ton Turn-on time 1.0 µs


IC=5A; VCC=200V
tstg Storage time IB1=0.5A; IB2=-1A 4.5 µs
RL=40@
tf Fall time 0.5 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3831

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

3
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3831

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