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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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Javier Mendoza Castro

This document provides product specifications for the SavantIC Semiconductor 2SD1554 silicon NPN power transistor. It is packaged in a TO-3P(H)IS package and is suitable for color TV horizontal output applications with features including a built-in damper diode, high voltage and speed capabilities, and low collector saturation voltage. Key specifications include an absolute maximum collector-emitter voltage of 600V, collector current of 3.5A, transition frequency of at least 3MHz, and collector-emitter saturation voltage below 8V when the collector current is 3A.

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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

Uploaded by

Javier Mendoza Castro
39 views3 pages
This document provides product specifications for the SavantIC Semiconductor 2SD1554 silicon NPN power transistor. It is packaged in a TO-3P(H)IS package and is suitable for color TV horizontal output applications with features including a built-in damper diode, high voltage and speed capabilities, and low collector saturation voltage. Key specifications include an absolute maximum collector-emitter voltage of 600V, collector current of 3.5A, transition frequency of at least 3MHz, and collector-emitter saturation voltage below 8V when the collector current is 3A.

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This document provides product specifications for the SavantIC Semiconductor 2SD1554 silicon NPN power transistor. It is packaged in a TO-3P(H)IS package and is suitable for color TV horizontal output applications with features including a built-in damper diode, high voltage and speed capabilities, and low collector saturation voltage. Key specifications include an absolute maximum collector-emitter voltage of 600V, collector current of 3.5A, transition frequency of at least 3MHz, and collector-emitter saturation voltage below 8V when the collector current is 3A.

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
39 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

Uploaded by

Javier Mendoza Castro
This document provides product specifications for the SavantIC Semiconductor 2SD1554 silicon NPN power transistor. It is packaged in a TO-3P(H)IS package and is suitable for color TV horizontal output applications with features including a built-in damper diode, high voltage and speed capabilities, and low collector saturation voltage. Key specifications include an absolute maximum collector-emitter voltage of 600V, collector current of 3.5A, transition frequency of at least 3MHz, and collector-emitter saturation voltage below 8V when the collector current is 3A.

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1554

DESCRIPTION
www.datasheet4u.com
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage

APPLICATIONS
·For color TV horizontal output applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 600 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 3.5 A

IB Base current 1 A

PC Collector power dissipation TC=25 40 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1554

CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)EBO Emitter-base breakdown voltage IE=0.2A , IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A 5.0 8.0 V

VBEsat Base-emitter saturation voltage IC=3A ;IB=0.8A 1.5 V

ICBO Collector cut-off current VCB=500V; IE=0 10 µA

hFE DC current gain IC=0.5A ; VCE=5V 8

fT Transition frequency IC=0.1A ; VCE=10V 3 MHz

COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF

VF Diode forward voltage IF=3.5A 2.0 V

tf Fall time ICP=3A ;IB1(end)=0.8A 0.5 1.0 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1554

PACKAGE OUTLINE

www.datasheet4u.com

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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