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Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

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The document provides product specification details for the 2SC1061 silicon NPN power transistor from Inchange Semiconductor. It is packaged in a TO-220 case and is intended for use in low frequency power amplifier applications. Key specifications include a maximum collector current of 3A, collector-emitter saturation voltage below 1V, and DC current gain between 35-320.

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Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

Uploaded by

ade abang
42 views4 pages
The document provides product specification details for the 2SC1061 silicon NPN power transistor from Inchange Semiconductor. It is packaged in a TO-220 case and is intended for use in low frequency power amplifier applications. Key specifications include a maximum collector current of 3A, collector-emitter saturation voltage below 1V, and DC current gain between 35-320.

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2SC1061

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The document provides product specification details for the 2SC1061 silicon NPN power transistor from Inchange Semiconductor. It is packaged in a TO-220 case and is intended for use in low frequency power amplifier applications. Key specifications include a maximum collector current of 3A, collector-emitter saturation voltage below 1V, and DC current gain between 35-320.

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
42 views4 pages

Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

Uploaded by

ade abang
The document provides product specification details for the 2SC1061 silicon NPN power transistor from Inchange Semiconductor. It is packaged in a TO-220 case and is intended for use in low frequency power amplifier applications. Key specifications include a maximum collector current of 3A, collector-emitter saturation voltage below 1V, and DC current gain between 35-320.

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1061

DESCRIPTION
・With TO-220 package
・Low saturation voltage
・Complement to type 2SA671
・Note: type 2SC1060 with short pin

APPLICATIONS
・For use in low frequency power
amplifier applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base

3 Emitter

Absolute maximum ratings (Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 50 V

VCEO Collector-emitter voltage Open base 50 V

VEBO Emitter-base voltage Open collector 4 V

IC Collector current (DC) 3 A

ICM Collector current-peak 8 A

IB Base current (DC) 0.5 A

PC Collector power dissipation TC=25℃ 25 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-a Thermal resistance from junction to case 5.0 ℃/W


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1061

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 50 V

V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 50 V

V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 4 V

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V

VBE Base-emitter on voltage IC=1A ; VCE=4V 1.5 V

ICBO Collector cut-off current VCB=25V;IE=0 0.1 mA

IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA

hFE-1 DC current gain IC=0.1A ; VCE=4V 35

hFE-2 DC current gain IC=1A ; VCE=4V 35 320

fT Transition frequency IC=0.5A ; VCE=4V 5.0 MHz

‹ hFE-2 classifications
A B C D

35-70 60-120 100-200 160-320

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1061

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)

3
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1061

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