# 2D nMOSFET (0.
18um technology)
# ------------------------------
# Declare initial grid (half structure)
# -------------------------------------
line x location= 0.0 spacing= 1.0<nm> tag= SiTop
line x location= 50.0<nm> spacing= 10.0<nm>
line x location= 0.5<um> spacing= 50.0<nm>
line x location= 2.0<um> spacing= 0.2<um>
line x location= 4.0<um> spacing= 0.4<um>
line x location= 10.0<um> spacing= 2.0<um> tag= SiBottom
line y location= 0.0 spacing= 50.0<nm> tag= Mid
line y location= 0.40<um> spacing=50.0<nm> tag= Right
# Silicon substrate definition
# ----------------------------
region Silicon xlo= SiTop xhi= SiBottom ylo= Mid yhi= Right
# Initialize the simulation
# -------------------------
init concentration= 1.0e+15<cm-3> field= Phosphorus
AdvancedCalibration
# p-well, anti-punchthrough & Vt adjustment implants
# --------------------------------------------------
implant Boron dose= 2.0e13<cm-2> energy= 200<keV> tilt= 0 rotation= 0
implant Boron dose= 1.0e13<cm-2> energy= 80<keV> tilt= 0 rotation= 0
implant Boron dose= 2.0e12<cm-2> energy= 25<keV> tilt= 0 rotation= 0
# p-well: RTA of channel implants
# -------------------------------
diffuse temperature= 1050<C> time= 10.0<s>
# Saving structure
# ----------------
struct tdr= n@node@_NMOS1 ; # p-Well
# Global Mesh settings for automatic meshing in newly generated layers
# --------------------------------------------------------------------
grid set.min.normal.size= 1<nm> set.normal.growth.ratio.2d= 1.5
mgoals accuracy= 1e-5
pdbSet Oxide Grid perp.add.dist 1e-7
pdbSet Grid NativeLayerThickness 1e-7
# Gate oxidation
# --------------
diffuse temperature= 850<C> time= 10.0<min> O2
select z=1
layers
struct tdr= n@node@_NMOS2 ; # GateOx
# Poly gate deposition
# --------------------
deposit material= {PolySilicon} type= anisotropic time= 1 rate= {0.18}
# Poly gate pattern/etch
# ----------------------
mask name= gate_mask left=-1 right= 90<nm>
etch material= {PolySilicon} type= anisotropic time= 1 rate= {0.2} \
mask= gate_mask
etch material= {Oxide} type= anisotropic time= 1 rate= {0.1}
struct tdr= n@node@_NMOS3 ; # PolyGate
# Poly reoxidation
# ----------------
diffuse temperature= 900<C> time= 10.0<min> O2
struct tdr= n@node@_NMOS4 ; # Poly Reox
# LDD implantation
# ----------------
refinebox Silicon min= {0.0 0.05} max= {0.1 0.12} xrefine= {0.01 0.01 0.01} \
yrefine= {0.01 0.01 0.01} add
grid remesh
implant Arsenic dose= 4e14<cm-2> energy= 10<keV> tilt= 0 rotation= 0
diffuse temperature= 1050<C> time= 0.1<s> ; # Quick activation
struct tdr= n@node@_NMOS5 ; # LDD Implant
# Halo implantation: Quad HALO implants
# -------------------------------------
implant Boron dose= 0.25e13<cm-2> energy= 20<keV> tilt= 30<degree> \
rotation= 0
implant Boron dose= 0.25e13<cm-2> energy= 20<keV> tilt= 30<degree> \
rotation= 90<degree>
implant Boron dose= 0.25e13<cm-2> energy= 20<keV> tilt= 30<degree> \
rotation= 180<degree>
implant Boron dose= 0.25e13<cm-2> energy= 20<keV> tilt= 30<degree> \
rotation= 270<degree>
# RTA of LDD/HALO implants
# ------------------------
diffuse temperature= 1050<C> time= 5.0<s>
struct tdr= n@node@_NMOS6 ; # Halo RTA
# Nitride spacer
# --------------
deposit material= {Nitride} type= isotropic time= 1 rate= {0.06}
etch material= {Nitride} type= anisotropic time=1 rate= {0.084} \
isotropic.overetch= 0.01
etch material= {Oxide} type= anisotropic time= 1 rate= {0.01}
struct tdr= n@node@_NMOS7 ; # Spacer
# N+ implantation
# ---------------
refinebox Silicon min= {0.04 0.12} max= {0.18 0.4} xrefine= {0.01 0.01 0.01} \
yrefine= {0.05 0.05 0.05} add
grid remesh
implant Arsenic dose= 5e15<cm-2> energy= 40<keV> \
tilt= 7<degree> rotation= -90<degree>
# N+ implantation & final RTA
# ---------------------------
diffuse temperature= 1050<C> time= 10.0<s>
struct tdr= n@node@_NMOS8 ; # S/D implants
# Contacts
# --------
deposit material= {Aluminum} type= isotropic time= 1 rate= {0.03}
mask name= contacts_mask left= 0.2<um> right= 1.0<um>
etch material= {Aluminum} type= anisotropic time= 1 rate= {0.25} \
mask= contacts_mask
etch material= {Aluminum} type= isotropic time= 1 rate= {0.02} \
mask= contacts_mask
# Reflect
# -------
transform reflect left
struct tdr= n@node@_NMOS ; # Final
# save final structure:
# - 1D cross sections
SetPlxList {BTotal NetActive}
WritePlx n@node@_NMOS_channel.plx y=0.0 Silicon
SetPlxList {AsTotal BTotal NetActive}
WritePlx n@node@_NMOS_ldd.plx y=0.1 Silicon
SetPlxList {AsTotal BTotal NetActive}
WritePlx n@node@_NMOS_sd.plx y=0.39 Silicon
exit
