Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.2 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150
Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collecto- base breakdown voltage VCBO Ic= 100 ìA IE=0 60 V Collector- emitter breakdown voltage VCEO Ic= 1 mA IB=0 40 V Emitter - base breakdown voltage VEBO IE= 10 A IC=0 6 V Collector cut-off current IcBO VCB= 60 V , IE=0 0.1 A Collector cut-off current IcEO VCE= 30 V , VBE(off)=3V 50 nA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 A VCE= 1V, IC= 10mA 100 400 DC current gain hFE VCE= 1V, IC= 50mA 60 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.3 V Base - emitter saturation voltage VBE(sat) IC= 50 mA, IB= 5mA 0.95 V Delay time td VCC=3.0V,VBE=-0.5V 35 ns Rise time tr IC=10mA,IB1=-IB2=1.0mA 35 Storage time ts VCC=3.0V,IC=10mA 200 ns Fall time tf IB1=-IB2=1.0mA 50 Transition frequency fT VCE= 20V, IC= 10mA,f=100MHz 250 MHz
Marking Marking 1AM
http://www.twtysemi.com sales@twtysemi.com 4008-318-123 1 of 2
Product specification
KMBT3904(MMBT3904) Typical Characteristics
Fig.1 Max Power Dissipation vs Fig.2 Input and Output Capacitance vs. Ambient Temperature Collector-Base Voltage
Fig.3 Typical DC Current Gain vs Fig.4 Typical Collector-Emitter Saturation Voltage vs. Collector Current Collector Current
Fig.5 Typical Base-Emitter Saturation Voltage vs.
Collector Current
http://www.twtysemi.com sales@twtysemi.com 4008-318-123 2 of 2
