Medium Power Transistor (32V,1A)

2SB1132 / 2SA1515S / 2SB1237

Features Dimensions (Unit : mm)

1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.) 2SB1132 2SA1515S
4+
− 0.2 2+
− 0.2
4.5 +0.2
(IC / IB = 500mA / 50mA)

− 0.1
−0.1
1.5 +0.2

0.5 +

− 0.2
1.6 +
− 0.1 −0.1
2) Compliments 2SD1664 /

3+

3Min.
2SD1858

− 0.3
2.5 +0.2
−0.1
4.0 +

(15Min.)
(1) (2) (3) 0.45 +0.15
−0.05
Structure 0.4 +0.1
−0.05

− 0.2
0.4 + 0.5 +
Epitaxial planar type − 0.1 − 0.1 0.4 0.1

1.0 +
1.5 +
− 0.1 1.5 +
− 0.1
PNP silicon transistor 3.0 +
− 0.2 2.5 +0.4
−0.1 0.5 0.45 +0.15
−0.05
5

(1) (2) (3)

(1) Base (1) Emitter
ROHM : MPT3 (2) Collector ROHM : SPT (2) Collector
EIAJ : SC-62 (3) Emitter EIAJ : SC-72 (3) Base
Abbreviated symbol: BA ∗
2SB1237
6.8 + 2.5 +
− 0.2
− 0.2
− 0.2
4.4 +
0.9
1.0

0.65Max.
− 0.5
14.5 +

0.5 +
− 0.1

(1) (2) (3)

2.54 2.54
1.05 0.45 +
− 0.1

(1) Emitter
ROHM : ATV (2) Collector
(3) Base

∗ Denotes h FE

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2SB1132 / 2SA1515S / 2SB1237 Data Sheet

Absolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO −40 V
Collector-emitter voltage VCEO −32 V
Emitter-base voltage VEBO −5 V
−1 A(DC)
Collector current IC
−2 A(Pulse) ∗1
0.5
2SB1132
Collector power 2 ∗2
PC W
dissipation 2SA1515S 0.3
2SB1237 1 ∗3
Junction temperature Tj 150 C
Storage temperature Tstg −55 to +150 C
∗1 Single pulse, Pw=100ms
∗2 When mounted on a 40 40 0.7 mm ceramic board.
+
+

∗3 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2 or larger.

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −40 − − V IC= −50μA
Collector-emitter breakdown voltage BVCEO −32 − − V IC= −1mA
Emitter-base breakdown voltage BVEBO −5 − − V IE= −50μA
Collector cutoff current ICBO − − −0.5 μA VCB= −20V
Emitter cutoff current IEBO − − −0.5 μA VEB= −4V
Collector-emitter saturation voltage VCE(sat) − −0.2 −0.5 V IC/IB= −500mA/−50mA ∗
DC current 2SB1132, 2SB1237 120 − 390 − ∗
hFE VCE= −3V, IC= −0.1A
transfer ratio 2SA1515S 120 − 390 −
Transition frequency fT − 150 − MHz VCE= −5V, IE=50mA, f=30MHz
Output capacitance Cob − 20 30 pF VCB= −10V, IE=0A, f=1MHz
∗ Measured using pulse current.

Packaging specifications and hFE

Package Taping
Code T100 TP TU2
Type hFE Basic ordering unit (pieces) 1000 5000 2500
2SB1132 QR − −
2SA1515S QR − −
2SB1237 QR − −

hFE values are classified as follows :

Item Q R
hFE 120 to 270 180 to 390

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 2SB1132 / 2SA1515S / 2SB1237 Data Sheet

Electrical characteristics curves

-500 −500
VCE= −6V −3.0 Ta=25 C Ta=25 C
−3.5 −2.5

COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)

-200 −4.0
−2.0 1000
−400 −4.5

DC CURRENT GAIN : hFE

-100 Ta=100 C −5.0
25 C
-50 −55 C −1.5 500
−300
VCE= −3V
-20 −1V
−1.0 200
−200
-10

-5 −0.5 100
−100
-2
50
0 IB=0mA
-1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 −0.4 −0.8 −1.2 −1.6 −2.0 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA)

Fig.1 Grounded emitter Fig.2 Grounded emitter output Fig.3 DC current gain vs.
propagation characteristics characteristics collector current(Ι)

−1 −1.0

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

COLLECTOR SATURATION VOLTAGE : VCE(sat )(V)

VCE= −3V Ta=25 C Ta=25 C

IC/IB=10
1000 −0.5
−0.8
DC CURRENT GAIN : hFE

500 −0.2
−0.6
Ta=100 C
−0.1
25 C lC= −500mA
200 −0.4
−0.05
−55 C
100 −0.2
−0.02 lC= −300mA
50
−0.01 0
−1 −2 −5 −10 −20 −50 −100 −200 −500−1000 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) BASE CURRENT : IB (mA)

Fig.4 DC current gain vs. Fig.5 Collector-emitter saturation Fig.6 Collector-emitter saturation
collector current(ΙΙ) voltage vs. collector current voltage vs. base current

100 −5
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

Ta=25 C Ta=25 C
TRANSITION FREQUENCY : fT (MHz)

VCE= −5V f=1MHz

IE=0A −2
COLLECTOR CURRENT : IC (A)

200

Pw

P w ms
−1

=1

=1 ∗
50

00

0m
−0.5

s
∗
100
D
−0.2 C

−0.1
50 20
−0.05

−0.02 Ta=25 C
∗Single pulse
20 10 −0.01
−1 −2 −5 −10 −20 −50 −100 −0.5 −1 −2 −5 −10 −20 0 −0.2 −0.5 −1 −2 −5 −10 −20 −50
EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.7 Gain bandwidth product Fig.8 Collector output capacitance Fig.9 Safe operation area
vs. emitter current vs.collector-base voltage (2SB1132)

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 2SB1132 / 2SA1515S / 2SB1237 Data Sheet

−5
TRANSIENT THERMAL RESISTANCE : Rth ( C/W)

1000 200
Ta=25 C Ta=25 C Ta=25 C
∗Single pulse
IC Max.∗
−2

COLLECTOR CURRENT : IC (A)

100
100

RESISTANCE : Rth ( C/W)

−1

TRANSIENT THERMAL
50
−0.5 PW =10ms∗
∗
PW =100ms
10 −0.2 20
DC
−0.1 10
1 −0.05
5
−0.02
0.1 −0.01 2
0.001 0.01 0.1 1 10 100 1000 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 0.01 0.1 1 10 100 1000

TIME : t (s) COLLECTOR TO EMITTER VOLTAGE : VCE (V) TIME : t (s)

Fig.10 Transient thermal resistance Fig.11 Safe operation area Fig.12 Transient thermal resistance
(2SB1132) (2SB1237) (2SB1237)

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 Notice

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