INSTRUCTION MANUAL

FOR
ENERGY BAND GAP OF PN JUNCTION DIODE
APPARATUS
Experimental Traning Boardhas been
using aP-N Junction Diode. The Boarddesigned specifically for Deternination of Bard Gap in Semissnd
is alsolutely Selfcontained and requires
experience on this board carries great educative value for science andnnother sprts. Praxcal
Engineering Students
OBJECT:
1. To draw thecharacteristics of aP-N
Junction diode for reverse saturation current and temperatiue
2. To determine the Band Gap in a
Semiconductor using a Junction Diode.
FEATURES:
The board consists of the following built-in
parts:
1. 2V D.C.at 1Oma, regulatd Power Supply.
2. Digital Microammeter,3 digits having range 200sAD.C.
3 Semiconductor Diode.
4. Thermometer 0-110°C

5. Oven, Electrically heated to heat the Semiconductor Diode.

6. Mains ON/OFFswitch and Fuse.

7. The unit is operative on 230V+10% at 50HzA.C. Mains.Adequate no. of patch curs

stackable from rear bothends 4mm spring loaded plug lengh 12 inch.
Good Quality,reliable terminal/sockets are provided at appropriats plast, n p2rel
nections/observation of waveforms.
 THEORY:A
and valencesemi-conduction dopedor undoped always
bands.For conduction of possesses ann
clectricity
ofelectron,so to the certain amount of energy gap
that it the a
the energy gap goes valence band
E between the two bands. conduction band. Thisenergy is tobetbewecn
energy so necdedgvenis othe
he me

P
N

FIG. 1
REVERSE BIASINGOFAPN
JUNCTION
When ap-njunction biased as
Le. due shown in Fig. 1the current t
-pendenteleupon
ctronsithenenergy
Psectiogapn andholes in Nsection. The throughthe junction is
AE.The saturated currentconcent rati on ofthese due to minority
junction diode, and varies according to the Is Value is cariersisda carierS
following relation: function ofthe
temperature of the
LogI, log Ae [N, N,(Vn
Where Pp+}Vp/Nn exp(-e &E/]KT)
- density ofelectrons in Nmaterial
N =density of holesin pmaterial
=velocity of holes
V =velocity of electrons
A =Area of the junction
K - Boltzmann Constant
T - Absolute temperature ofjunction
N, -2(2( II mKT/e 2
h

N, =2(2( II mKTe2
h yt

).5

2.3 2.4 2.5 26 2.7 2.8 2.9 3.0 3. 32

OBJECT:
TO DRAWTHE CHARACTERISITICS OFA-P-N JUNCTION DIODE FOR REVERSE &ATL
RATIONCURRENT AND TEMPERATURE.
PROCEDURE:
Plug the mains lead to the nearest mains socket carrying 230V+10% at 50Hz A

holes ofthe oven

Insert the thermometer and the diode in the

Redplug in Red socket ant Blwk plug ahk

3. Plug the two leads to the diodein the socket,
socket.

4. Make the conncction as per Fig.3

 ir t the
Pt the pretot
tyen cthto Swite hs N
n
seitym and allepenitin
ven the
ard eeththat jewel lioht
oteAI
rise further sonn an the temperature to
temperataround
hecomes stable ure 99reaches 95 C
o. a1witch off the
oven
When the
ternpeTafure enahling the
auTent read1ng should becomes
bet
taken
stable start taking
insteps of readingn of
tetnpenurcture from 9(0C downwards,. SuA.The readings shoulcurrednt and The
tempralur
S.1Tabulate Your readings in the forn Abe takentemperature
Reverse
shown below: duringthe fal of

Saturaition Termperature
in C

(absolute) Tenper
Tin Kature 10rT
logl.

9.Plote
come as agraph
straightbetline
ween the readings of 1T on-
cutting both the x-axis and X-axis and log Is on
0BJECTDIODE.
2:-TO Y-axis.(as shown in FiY-g.a2xi).s.The graph shonli
TION DETERMINE THEBAND GAP
PROCEDCRE
1.
2. Repezt
Now above steps 1to 9as in ExperiForment No.l
deternine the slope ofthe line.
basis of rezdings, refer to
INASEMICONDUCTORUSINGAJUNC.
the Fig. No.2. determination ofthe slope of the
line plotted on the
Notegraph
The :-Thgirnays have no Fig2 is just an example to
graph of
relation with the actual readingillustrate the determination of slope of the
Ploted by the actual readings
2xis say CD. is AB. Now
from any pointobtained in the
Con the experimaent. Suppose the line
line.
line,draw perpendicular on the X
 5,036

'RECAUTION:
1Tho masimum tempenlure shonld not exceed 90 C
)Rulh ot the themometer and the dode should be jnseysd ysl) in tds v
)Gedodes shoud not be used with the sel up as in the cagthelnga Ja is Z5
dthe oen themoneter povided willnot slapd to }his teyeatiuye.
 OPERATIN NSTRUTKS

OA-7

DCSIUPPLY

oVE
DPM 200UA

DETERMINATIONOF ENERGY BAND

GAP IN SEMICONDUCTOR DIODE

CURF ENT METER:-290A

DC REGULATED
POWER SUPPLY
2V AT40snA

POWER
OFF

wwOMEGAELECTRONcS NET
ON

FIG. 3 PRACTICAL CIRCUIT DIAGRAM