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Exp 01

Avionics experiment

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Farhan Masud
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10 views4 pages

Exp 01

Avionics experiment

Uploaded by

Farhan Masud
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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MILITARY INSTITUTE OF SCIENCE AND TECHNOLOGY

Department of Aeronautical Engineering


COURSE NO: EECE AEAV-216 (Fundamentals of Electronics Sessional)
Expt. No.-01

NAME OF THE EXPERIMENT: STUDY OF DIODE CHARACTERISTICS

OBJECTIVE

To study the I-V characteristics of silicon p-n junction diodes.

MATERIALS REQUIRED

p-n junction diode(1N4003) one piece


5V Zener diode one piece
resistor (1K) one piece
dc power suply one piece
signal generator one piece
oscilloscope one unit
chords and wire lot

THEORY

DIODE: A p-n junction diode is a two-terminal device that acts as an one-way


conductor. When a diode is forward biased as shown in Fig. 1(a), current ID flows
through the diode and current is given by

(1)

where, n is the ideality factor and 1 n 2. IS is the reverse-saturation current and
VT =kT/q is the thermal voltage. VT is about 0.026V at room temperature.

Va

D1
+

V R
-

Fig.1(a)

1
When it is reverse biased as shown in Fig. 1(b), I D = -IS (for see eqn. (2)). As it is generally
in pA (pico-amp) range, in many applications this current is neglected and diode is
considered open.
for |V| >>VT (2)
The material for p-n junction diode is silicon semiconductor. Semiconductors are a group
of materials having electrical conductivity intermediate between metals and insulators.
Metals: Al (aluminum), Cu(copper),Au(gold).
Insulators: Ceramic, Wood , rubber.
Semiconductor: Si (silicon), Ge (germanium), GaAs (gallium-arsenide).

P-type Silicon:
When an intrinsic silicon semiconductor is doped with Al impurities, it becomes p-type.
At thermal equilibrium,
po=NA and no = ni2/NA
where, po is the hole concentration , no is the electron concentration , NA is the doping
density of impurities(acceptor atoms), ni is the intrinsic concentration. ni = 1.5x1010cm-3 for
Si at room temperature .

N-type silicon:
When an intrinsic silicon semiconductor is doped with P(phosphorous) impurities it
becomes n-type . At thermal equilibrium, no=ND and Po= ni2/ND. Here, ND is the doping
density of impurities (donor atoms).

In semiconductor both holes and electrons contribute to current.


Current-Voltage Characteristics

Fig. 1(b)

2
BREAK DOWN VOLTAGE: Vin is the cut-in voltage. Its value is usually 0.5V. At
this voltage, diode is forward biased but even then I is very small and it is usually
neglected. When diode is reverse biased and V< VK, diode drives into breakdown and
a large current will flow. The current can be limited by using resistor in diode
circuit. If the slope (dI/dV) is very steep, the breakdown mechanism is called Zener
breakdown. Zener diode can be used in regulator circuit.

Small Signal
Consider the circuit shown in Fig. 1(c). For ac voltage Vd <10 mV, we can write
id = [ID/nVT] * vd = vd/rd
where, rd = nVT/ID is the diode small-signal (dynamic) resistance and ID is the dc current.
Dc resistance is given by rD = VD/ID where VD is the dc voltage across the diode .

+
V
-

- Vd

Fig. 1 (c)
CIRCUIT DIAGRAMS FOR EXPERIMENTS

Fig. 2

(Circuit diagram for


diode characteristics.)

3
Fig. 3
(Circuit diagram for
zenner diode characteristics.)

PROCEDURE

1. Measure resistance accurately using multimeter. Construct the circuit as shown in Fig.
2.Vary input voltage (Vdc) and measure VD, VR for values of Vdc=0.1V, 0.2V, 0.3V,
0.4V, 0.5V, 0.6V, 0.7V and so on. Obtain maximum value of VD without increasing
Vdc beyond 20 V (Note that ID=VR/ R).

2. Repeat step1 for the values at Vdc =0.5V, 1.0V, 1.5V, 2.0V, 2.5V, 3V and so on up to
the maximum value obtainable without increasing Vdc beyond 20V. Apply circuit in
Fig. 3 for this step.

REPORT

1. Plot diode I-V characteristics for different readings obtained in this experiment.

2. Calculate static and dynamic resistance for ID=5 mA, 10 mA and also for VD=0.6 V,
0.72 V for circuit in Fig. 2.

3. Determine the Q-point for the circuit in Fig. 2 when Vdc=15 V.

4. Explain the result obtained in step 4.

5. What is the Zener voltage of the diode of Fig. 3?

6. What is the dynamic resistance of the Zener diode at Zener voltage?

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