STW65N60DM6, STWA65N60DM6

Datasheet

N-channel 600 V, 60 mΩ typ., 46 A MDmesh DM6 Power MOSFETs

in a TO‑247 and TO‑247 long leads packages

Features
Order code VDS RDS(on) max. ID

STW65N60DM6
600 V 71 mΩ 46 A
STWA65N60DM6
3
2
2
3 1
• Fast-recovery body diode
1

TO-247 TO-247 long leads • Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
D(2, TAB)
• Extremely high dv/dt ruggedness
• Zener-protected

G(1)

Applications
• Switching applications

S(3)
AM01476v1_tab
Description
These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6
fast-recovery diode series. Compared with the previous MDmesh fast generation,
DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.

Product status links

STW65N60DM6
STWA65N60DM6

Product summary

Order code STW65N60DM6

Marking 65N60DM6
Package TO-247
Packing Tube
Order code STWA65N60DM6
Marking 65N60DM6
Package TO-247 long leads
Packing Tube

DS12314 - Rev 5 - May 2021 www.st.com

For further information contact your local STMicroelectronics sales office.
 STW65N60DM6, STWA65N60DM6
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ±25 V

Drain current (continuous) at TC = 25 °C 46

ID A
Drain current (continuous) at TC = 100 °C 29

IDM (1) Drain current (pulsed) 140 A

PTOT Total power dissipation at TC = 25 °C 368 W

dv/dt(2) Peak diode recovery voltage slope 100 V/ns

di/dt(2) Peak diode recovery current slope 1000 A/μs

dv/dt(3) MOSFET dv/dt ruggedness 100 V/ns

Tstg Storage temperature range °C

-55 to 150
TJ Operating junction temperature range °C

1. Pulse width limited by safe operating area.

2. ISD ≤ 46 A, VDS (peak) < V(BR)DSS, VDD = 400 V.
3. VDS ≤ 480 V.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance, junction-to-case 0.34 °C/W

RthJA Thermal resistance, junction-to-ambient 50 °C/W

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IAR Avalanche current, repetitive or not repetitive (pulse width limited by TJ max) 6 A

EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR; VDD = 50 V) 900 mJ

DS12314 - Rev 5 page 2/14

 STW65N60DM6, STWA65N60DM6
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V

VGS = 0 V, VDS = 600 V 1

IDSS Zero gate voltage drain current μA
VGS = 0 V, VDS = 600 V, TC = 125 °C(1) 100

IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 μA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 3.25 4.00 4.75 V

RDS(on) Static drain-source on resistance VGS = 10 V, ID = 23 A 60 71 mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 2500 - pF

Coss Output capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 125 - pF

Crss Reverse transfer capacitance - 4 - pF

Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 204 - pF

RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.7 - Ω

Qg Total gate charge - 65.2 - nC

VDD = 480 V, ID = 42 A, VGS = 0 to 10 V
Qgs Gate-source charge (see Figure 14. Test circuit for gate - 16.8 - nC

Qgd charge behavior)

Gate-drain charge - 30.2 - nC

1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 300 V, ID = 19 A, - 21 - ns

tr Rise time RG = 4.7 Ω, VGS = 10 V - 22 - ns

td(off) Turn-off delay time (see Figure 13. Test circuit for - 56 - ns
resistive load switching times and
tf Fall time Figure 18. Switching time waveform) - 9 - ns

DS12314 - Rev 5 page 3/14

 STW65N60DM6, STWA65N60DM6
Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 46 A

ISDM (1)
Source-drain current (pulsed) - 140 A

VSD (2) Forward on voltage VGS = 0 V, ISD = 46 A - 1.6 V

trr Reverse recovery time ISD = 38 A, di/dt = 100 A/μs, - 116 ns

Qrr Reverse recovery charge VDD = 60 V - 0.58 µC

(see Figure 15. Test circuit for inductive
IRRM Reverse recovery current - 10 A
load switching and diode recovery times)
trr Reverse recovery time ISD = 38 A, di/dt = 100 A/μs, - 208 ns

Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 1.98 µC

(see Figure 15. Test circuit for inductive
IRRM Reverse recovery current - 19 A
load switching and diode recovery times)

1. Pulse width is limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

DS12314 - Rev 5 page 4/14

 STW65N60DM6, STWA65N60DM6
Electrical characteristics curves

2.1 Electrical characteristics curves

Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance

ID GADG250320211403SOA ZthJC GADG250320211419ZTH

(A) (°C/W)
IDM
0.4 0.3
duty=0.5
10 2 tp =1 µs
ea

10 -1
ar

tp =10 µs
R his
)
on

0.2
S(
by t
D
d in
ite ion

10 1 0.1
RDS(on) max.
lim rat
is pe

tp =100 µs 0.05
O

10 -2
V(BR)DSS RthJC = 0.34 °C/W
10 0
Single pulse duty = ton / T
TJ≤150 °C
TC=25 °C
VGS=10 V tp =1 ms ton

10 -1 single pulse tp =10 ms 10 -3

T

10 -1 10 0 10 1 10 2 VDS (V) 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s)

Figure 3. Typical output characteristics Figure 4. Typical output characteristics

ID GIPD031020181119OCH ID GIPD031020181119TCH
(A) (A)
VGS =10V
120 120
VGS =9V
VDS = 20V
100 100
VGS =8V
80 80

60 60
VGS =7V
40 40

20 20

0 VGS =6V 0
0 4 8 12 16 VDS (V) 4 5 6 7 8 9 VGS (V)

Figure 5. Typical drain-source on-resistance Figure 6. Typical gate charge characteristics

RDS(on) GADG250320211420RID VDS GADG220320211445QVG VGS

(mΩ) (V) VDD = 480 V, ID = 42 A (V)

66 600 12
Qg

64 500 10
VDS
VGS =10V Qgs Qgd VGS
62 400 8

60 300 6

58 200 4

56 100 2

54 0 0
0 6 12 18 24 30 36 42 ID (A) 0 10 20 30 40 50 60 70 Qg (nC)

DS12314 - Rev 5 page 5/14

 STW65N60DM6, STWA65N60DM6
Electrical characteristics curves

Figure 7. Typical capacitance characteristics Figure 8. Normalized gate threshold vs temperature

C GIPD031020181120CVR VGS(th) GIPD031020181121VTH

(pF) (norm.)

1.1
10 4

CISS 1.0
10 3
0.9
10 2 COSS ID = 250 µA
0.8

10 1 f = 1 Mhz
0.7
CRSS
10 0 0.6
10 -1 10 0 10 1 10 2 VDS (V) -75 -25 25 75 125 Tj (°C)

Figure 9. Normalized on resistance vs temperature Figure 10. Typical output capacitance stored energy

RDS(on) GIPD031020181122RON Eoss GIPD041020181405SDF

(norm.) (µJ)
24
2.5

20
2.0
16
VGS = 10 V
1.5
12
1.0
8

0.5 4

0.0 0
-75 -25 25 75 125 Tj (°C) 0 100 200 300 400 500 600 VDS (V)

Figure 11. Normalized breakdown voltage vs temperature Figure 12. Typical reverse diode forward characteristics

V(BR)DSS GIPD031020181123BDV VSD GADG220320211451SDF

(norm.) (V)

1.10 1.1
TJ = -50°C

1.0
1.05
0.9
TJ = 25°C
1.00
0.8
ID = 1 mA
0.95 TJ = 150°C
0.7

0.90 0.6

0.85 0.5
-75 -25 25 75 125 Tj (°C) 0 6 12 18 24 30 36 42 ISD (A)

DS12314 - Rev 5 page 6/14

 STW65N60DM6, STWA65N60DM6
Test circuits

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior

VDD

RL

RL
2200 3.3
+ μF μF VDD IG= CONST
VD VGS 100 Ω D.U.T.

RG
pulse width +
VGS D.U.T. 2.7 kΩ
2200 VG
pulse width μF
47 kΩ

1 kΩ

AM01468v1 AM01469v10

Figure 15. Test circuit for inductive load switching and

diode recovery times
Figure 16. Unclamped inductive load test circuit

A A A
D L
fast 100 µH VD
G D.U.T. diode
2200 3.3
S B 3.3 1000 + µF VDD
B B µF
25 Ω D
µF + µF VDD ID

G D.U.T.
+ RG S Vi D.U.T.

pulse width
_

AM01471v1

AM01470v1

Figure 17. Unclamped inductive waveform

Figure 18. Switching time waveform
V(BR)DSS ton toff

VD td(on) tr td(off) tf

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD VGS 90%

0 10%
AM01473v1

AM01472v1

DS12314 - Rev 5 page 7/14

 STW65N60DM6, STWA65N60DM6
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-247 package information

Figure 19. TO-247 package outline

aaa

0075325_10

DS12314 - Rev 5 page 8/14

 STW65N60DM6, STWA65N60DM6
TO-247 package information

Table 8. TO-247 package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70
aaa 0.04 0.10

DS12314 - Rev 5 page 9/14

 STW65N60DM6, STWA65N60DM6
TO-247 long leads package information

4.2 TO-247 long leads package information

Figure 20. TO-247 long leads package outline

8463846_3

DS12314 - Rev 5 page 10/14

 STW65N60DM6, STWA65N60DM6
TO-247 long leads package information

Table 9. TO-247 long leads package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.90 5.00 5.10

A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b 1.16 1.26
b2 3.25
b3 2.25
c 0.59 0.66
D 20.90 21.00 21.10
E 15.70 15.80 15.90
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e 5.34 5.44 5.54
L 19.80 19.92 20.10
L1 4.30
P 3.50 3.60 3.70
Q 5.60 6.00
S 6.05 6.15 6.25
aaa 0.04 0.10

DS12314 - Rev 5 page 11/14

 STW65N60DM6, STWA65N60DM6

Revision history

Table 10. Document revision history

Date Version Changes

02-Nov-2017 1 Initial release.

Removed maturity status indication from cover page.
The document status is production data.
Updated title and features in cover page.
03-Oct-2018 2
Updated Updated Section 1 Electrical ratings, Section 2 Electrical characteristics.
Added Section 2.1 Electrical characteristics curves.
Minor text changes.
17-Jun-2020 3 Updated Table 1. Absolute maximum ratings.
Updated Table 1. Absolute maximum ratings, Table 2. Thermal data, Table 4. On/off states,
31-Mar-2021 4 Table 7. Source drain diode, Figure 1. Safe operating area, Figure 2. Maximum transient
thermal impedance and Figure 6. Gate charge vs gate-source voltage.
Updated Section 4.2 TO-247 long leads package information.
21-May-2021 5
Minor text changes.

DS12314 - Rev 5 page 12/14

 STW65N60DM6, STWA65N60DM6
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

DS12314 - Rev 5 page 13/14

 STW65N60DM6, STWA65N60DM6

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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© 2021 STMicroelectronics – All rights reserved

DS12314 - Rev 5 page 14/14