STF20NM60D - STP20NM60FD

STW20NM60FD
N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247
FDmesh™ Power MOSFET (with fast diode)

General features
Type VDSS RDS(on) ID Pw
STF20NM60D 600V <0.29Ω 20A 192W
3
STP20NM60FD 600V <0.29Ω 20A 45W 2
1
STW20NM60FD 600V <0.29Ω 20A 214W TO-220FP
TO-247
■ High dv/dt and avalanche capabilities
■ 100% Avalanche tested
■ Low input capacitance and gate charge 2
3
1
■ Low gate input resistancE TO-220
■ Tight process control and high manufacturing
yields
Internal schematic diagram
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.

Applications
■ Switching application

Order codes
Part number Marking Package Packaging
STF20NM60D F20NM60D TO-220FP Tube
STP20NM60FD P20NM60FD TO-220 Tube
STW20NM60FD W20NM60FD TO-247 Tube

August 2006 Rev 4 1/15

www.st.com 15
Contents STF20NM60D - STP20NM60FD - STW20NM60FD

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuit ................................................ 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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STF20NM60D - STP20NM60FD - STW20NM60FD Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Value
Symbol Parameter Unit
TO-220 TO-220FP TO-247

VDS Drain-source voltage (VGS = 0) 600 V

VDGR Drain-gate voltage (RGS = 20 kΩ) 600 V
VGS Gate- source voltage ± 30 V
(1)
ID Drain current (continuous) at TC = 25°C 20 20 20 A
ID (1)
Drain current (continuous) at TC = 100°C 12.6 12.6 12.6 A
(2) (1)
IDM Drain current (pulsed) 80 80 80 A
PTOT Total dissipation at TC = 25°C 192 45 214 W
Derating factor 1.20 0.36 1.42 W/°C
dv/dt (3)
Peak diode recovery voltage slope 20 V/ns
VISO Insulation withstand voltage (DC) - 2500 - V
Tj Operating junction temperature °C
– 65 to 150
Tstg Storage temperature °C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD < 20A, di/dt < 400A/µs, VDD = 80%V(BR)DSS

Table 2. Thermal resistance

Value
Symbol Parameter Unit
TO-220 TO-220FP TO-247

Rthj-case Thermal resistance junction-case Max 0.65 2.8 0.585 °C/W

Rthj-amb Thermal resistance junction-ambient Max 62.5 30 °C/W
Maximum lead temperature for soldering
Tl 300 °C
purpose

Table 3. Avalanche data

Symbol Parameter Value Unit

Avalanche current, repetitive or not-repetitive

IAR 10 A
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS 700 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)

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Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min Typ Max Unit

Drain-source breakdown
V(BR)DSS ID = 250µA, VGS = 0 600 V
voltage
Zero gate voltage VDS = Max rating 1 µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC = 125 °C 10 µA
Gate-body leakage ±10
IGSS VGS = ±30V µA
current (VDS = 0) 0

VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 3 4 5 V

Static drain-source on
RDS(on) VGS = 10V, ID = 10A 0.26 0.29 Ω
resistance

Table 5. Dynamic
Symbol Parameter Test conditions Min Typ Max Unit

VDS > ID(on) x RDS(on)max,

gfs (1) Forward transconductance 9 S
ID = 10A
Ciss Input capacitance 1300 pF
Coss Output capacitance VDS = 25V, f = 1 MHz, VGS = 0 500 pF
Crss Reverse transfer capacitance 35 pF
Coss eq. (2) Equivalent output capacitance VGS = 0V, VDS = 0V to 480V 190 pF
f=1 MHz Gate DC Bias = 0
RG Gate input resistance Test signal level = 20mV 2.7 Ω
open drain
Qg Total gate charge VDD = 480V, ID = 20A, 37 nC
Qgs Gate-source charge VGS = 10V 10 52 nC
Qgd Gate-drain charge (see Figure 17) 17 nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%

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STF20NM60D - STP20NM60FD - STW20NM60FD Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

VDD = 300V, ID = 10A

td(on) Turn-on delay time 25 ns
RG = 4.7Ω VGS = 10V
tr Rise time 12 ns
(see Figure 16)
tr(Voff) Off-voltage rise time VDD = 480 V, ID = 20A, 8 ns
tf Fall time RG = 4.7Ω, VGS = 10V 22 ns
tc Cross-over time (see Figure 16) 30 ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

ISD Source-drain current 20 A

(1)
ISDM Source-drain current (pulsed) 80 A
VSD (2) Forward on voltage ISD = 20 A, VGS = 0 1.5 V
trr Reverse recovery time ISD = 20 A, Tj = 25°C 240 ns
Qrr Reverse recovery charge di/dt =100A/µs,VDD=60V 1800 nC
IRRM Reverse recovery current (see Figure 21) 16 A
trr Reverse recovery time ISD = 20 A, Tj = 150°C 396 ns
Qrr Reverse recovery charge di/dt =100A/µs,VDD=60V 2960 nC
IRRM Reverse recovery current (see Figure 21) 20 A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

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Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220

Figure 3. Safe operating areafor TO-220FP Figure 4. Thermal impedance for TO-220FP

Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247

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STF20NM60D - STP20NM60FD - STW20NM60FD Electrical characteristics

Figure 7. Output characterisics Figure 8. Transfer characteristics

Figure 9. Transconductance Figure 10. Static drain-source on resistance

Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations

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Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD

Figure 13. Normalized gate threshold voltage Figure 14. Normalized on resistance vs
vs temperature temperature

Figure 15. Source-drain diode forward

characteristics

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STF20NM60D - STP20NM60FD - STW20NM60FD Test circuit

3 Test circuit

Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit
resistive load

Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test
switching and diode recovery times circuit

Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform

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Package mechanical data STF20NM60D - STP20NM60FD - STW20NM60FD

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com

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STF20NM60D - STP20NM60FD - STW20NM60FD Package mechanical data

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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Package mechanical data STF20NM60D - STP20NM60FD - STW20NM60FD

TO-247 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e 5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S 5.50 0.216

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STF20NM60D - STP20NM60FD - STW20NM60FD Package mechanical data

TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

G1

G
H

F2

1 2 3
L5
L2 L4

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Revision history STF20NM60D - STP20NM60FD - STW20NM60FD

5 Revision history

Table 8. Revision history

Date Revision Changes

09-Sep-2004 1 First release

21-Apr-2006 2 New template
25-Jul-2006 3 Modified part number
01-Aug-2006 4 Corrected unit on Table 5.: Dynamic

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STF20NM60D - STP20NM60FD - STW20NM60FD

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