Switching MOSFETs 60N02 S130N10LF 4606A 20N02 20N02 Features Product Summary
Split Gate Trench MOSFET technology
Excellent package for heat dissipation BVDSS RDSON ID 100V 3.5mΩ 130A High density cell design for low RDS(ON)
Description PDFN5*6 Pin Configuration
DC-DC Converters Power management functions
Synchronous-rectification applications
Absolute Maximum Ratings
Symbol Parameter Max. Unit
VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V T C = 25℃ 130 A ID Continuous Drain Current T C = 100℃ 76 A IDM Pulsed Drain Current note1 480 A EAS Single Pulsed Avalanche Energy note2 320 mJ PD Power Dissipation T C = 25℃ 131.6 W RθJA Thermal Resistance from Junction-to-Ambient3 48 ℃/W RθJC Thermal Resistance, Junction to Case 0.95 ℃/W T J , T STG Operating and Storage Temperature Range -55 to +150 ℃
01 N-Ch 100V Fast Switching N-Ch 20V FastMOSFETs 60N02 Switching MOSFETs 60N02 4606A S130N10LF 20N02 20N02 Electrical Characteristics (TJ =25 ℃ unless otherwise specified） Symbol Parameter Test condition Min. Typ. Max. Units Static Characteristics V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 100 - - V lGSS Gate-body Leakage current VDS = 0V, VGS = ±20V - - ±100 nA TJ=25°C - - 1 μA IDSS Zero Gate Voltage Drain Current VDS =100V, VGS = 0V TJ=100°C - - 100 μA VGS(th) Gate-Threshold Voltage VDS = VGS, ID = 250µA 1.2 1.8 2.5 V VGS = 10V, ID = 20A - 3.5 4.5 mΩ R DS(on) Drain-Source on-Resistance 4 VGS = 4.5V, ID = 15A - 5.2 6.7 mΩ g fs Forward Transconductance 4 VDS = 10V, ID =20A - 70 - S 5 Dynamic Characteristics C iss Input Capacitance - 5475 - pF VDS = 50V, VGS =0V, C oss Output Capacitance - 768 - pF f =1MHz C rss Reverse Transfer Capacitance - 22 - pF Rg Gate Resistance f=1MHz - 1.3 - Ω 5 Switching Characteristics Qg Total Gate Charge - 111.2 - nC VGS = 10V, VDS = 50V, Qgs Gate-Source Charge - 17.5 - nC ID= 20A Qgd Gate-Drain Charge - 30.2 - nC td(on) Turn-on Delay Time - 22.2 - ns tr Rise Time VGS =10V, VDD = 50V, - 37.8 - ns td(off) Turn-off Delay Time RG = 3Ω, ID= 20A - 95.2 - ns tf Fall Time - 35.6 - ns trr Body Diode Reverse Recovery Time IF=20A, di/dt = 100A/μ - 59.4 - ns Qrr Body Diode Reverse Recovery Charge S - 91.8 - nC
Diode Characteristics Drain-Source Body Diode Characteristics VSD Diode Forward Voltage4 IS = 20A, VGS = 0V - - 1.2 V IS Continuous Source Current TC=25°C - - - 130 A
Notes:
1.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
2.The EAS data shows Max. rating . The test condition is VDD= 25V, VGS= 10V, L= 0.4mH, IAS= 40A.
3.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application
depends on the user's specific board design.
4.The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%.
5.This value is guaranteed by design hence it is not included in the production test.
