This document provides specifications for a P-channel enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of -100V, on-state resistance of 60mΩ at -10V gate-source voltage, and continuous drain current rating of -24A. The MOSFET package is a TO-220F and it has a thermal resistance of up to 2°C/W junction-to-case. Absolute maximum ratings and electrical characteristics are provided.
This document provides specifications for a P-channel enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of -100V, on-state resistance of 60mΩ at -10V gate-source voltage, and continuous drain current rating of -24A. The MOSFET package is a TO-220F and it has a thermal resistance of up to 2°C/W junction-to-case. Absolute maximum ratings and electrical characteristics are provided.
This document provides specifications for a P-channel enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of -100V, on-state resistance of 60mΩ at -10V gate-source voltage, and continuous drain current rating of -24A. The MOSFET package is a TO-220F and it has a thermal resistance of up to 2°C/W junction-to-case. Absolute maximum ratings and electrical characteristics are provided.
This document provides specifications for a P-channel enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of -100V, on-state resistance of 60mΩ at -10V gate-source voltage, and continuous drain current rating of -24A. The MOSFET package is a TO-220F and it has a thermal resistance of up to 2°C/W junction-to-case. Absolute maximum ratings and electrical characteristics are provided.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 TC = 25 °C -24 Continuous Drain Current ID TC = 100 °C -15 1,2 A Pulsed Drain Current IDM -96 Avalanche Current IAS -52 Avalanche Energy L = 0.1mH EAS 139 mJ TC = 25 °C 62 Power Dissipation PD W TC = 100 °C 15 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 2 °C / W 1 Pulse width limited by maximum junction temperature. 2 Limited by package.
Ver 1.0 1 2012/4/16
P6010DTFG P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS PARAMETER SYMBOL TEST CONDITIONS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250mA -100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250mA -1.5 -2.6 -4.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA VDS = -80V, VGS = 0V -1 Zero Gate Voltage Drain Current IDSS mA VDS = -80V, VGS = 0V , TJ = 125 °C -10 On-State Drain Current1 ID(ON) VDS = -5V, VGS = -10V -96 A 1 RDS(ON) VGS = -10V, ID = -20A Drain-Source On-State Resistance 50 60 mΩ 1 gfs VDS = -15V, ID = -20A Forward Transconductance 30 S DYNAMIC Input Capacitance Ciss 5180 Output Capacitance Coss VGS = 0V, VDS = -25V, f = 1MHz 324 pF Reverse Transfer Capacitance Crss 207 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 4.9 Ω 2 Qg Total Gate Charge 98 2 VDS = 0.5V(BR)DSS, Gate-Source Charge Qgs 18 nC ID = -20A, VGS = -10V 2 Qgd Gate-Drain Charge 24 2 td(on) Turn-On Delay Time 18 Rise Time 2 tr VDS = -50V, ID @ -20A, 88 2 nS Turn-Off Delay Time td(off) VGS = -10V, RGS = 2.5Ω 85 Fall Time2 tf 81 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -24 A 1 VSD IF = -20A, VGS = 0V Forward Voltage -1.3 V Reverse Recovery Time trr 65 nS IF = -20A, dlF/dt = 100A / mS Reverse Recovery Charge Qrr 178 nC 1 Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2 Independent of operating temperature.
