This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include:
- A breakdown voltage of 30V, on-resistance of 5.8mΩ at 10V gate voltage, and continuous drain current rating of 70A.
- Absolute maximum ratings including drain-source voltage of 30V, gate-source voltage of ±20V, and continuous drain current of 70A at 25°C and 44A at 100°C.
- Electrical characteristics at 25°C including threshold voltage of 1.0-3.0V and on-state drain current of 70A at a drain-source voltage of 10V and gate-source voltage of 10V.
This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include:
- A breakdown voltage of 30V, on-resistance of 5.8mΩ at 10V gate voltage, and continuous drain current rating of 70A.
- Absolute maximum ratings including drain-source voltage of 30V, gate-source voltage of ±20V, and continuous drain current of 70A at 25°C and 44A at 100°C.
- Electrical characteristics at 25°C including threshold voltage of 1.0-3.0V and on-state drain current of 70A at a drain-source voltage of 10V and gate-source voltage of 10V.
This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include:
- A breakdown voltage of 30V, on-resistance of 5.8mΩ at 10V gate voltage, and continuous drain current rating of 70A.
- Absolute maximum ratings including drain-source voltage of 30V, gate-source voltage of ±20V, and continuous drain current of 70A at 25°C and 44A at 100°C.
- Electrical characteristics at 25°C including threshold voltage of 1.0-3.0V and on-state drain current of 70A at a drain-source voltage of 10V and gate-source voltage of 10V.
This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include:
- A breakdown voltage of 30V, on-resistance of 5.8mΩ at 10V gate voltage, and continuous drain current rating of 70A.
- Absolute maximum ratings including drain-source voltage of 30V, gate-source voltage of ±20V, and continuous drain current of 70A at 25°C and 44A at 100°C.
- Electrical characteristics at 25°C including threshold voltage of 1.0-3.0V and on-state drain current of 70A at a drain-source voltage of 10V and gate-source voltage of 10V.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 TC = 25 °C 70 Continuous Drain Current ID TC = 100 °C 44 1 A Pulsed Drain Current IDM 180 Avalanche Current IAS 49 Avalanche Energy L = 0.1mH EAS 120 mJ TC = 25 °C 51 Power Dissipation PD W TC = 100 °C 20 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C 1 Lead Temperature ( /16" from case for 10 sec.) TL 275 °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RθJC 2.45
°C / W Junction-to-Ambient RθJA 62.5 1 Pulse width limited by maximum junction temperature.
Ver 1.0 1 2011/4/7
P0603BD N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS UNIT PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250μA 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.6 3.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA VDS = 24V, VGS = 0V 1 Zero Gate Voltage Drain Current IDSS μA VDS = 20V, VGS = 0V , TJ = 125 °C 10 On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 70 A Drain-Source On-State VGS = 4.5V, ID = 30A 6.2 9.0 RDS(ON) mΩ Resistance1 VGS = 10V, ID = 30A 4.6 5.8 Forward Transconductance1 gfs VDS = 5V, ID = 20A 90 S DYNAMIC Input Capacitance Ciss 2110 Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 469 pF Reverse Transfer Capacitance Crss 336 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.4 Ω 2 Qg 44 Total Gate Charge Gate-Source Charge2 Qgs VDS = 15V, VGS = 10V, ID = 25A 8 nC 2 Qgd 9 Gate-Drain Charge Turn-On Delay Time2 td(on) 23 2 tr 36 Rise Time VDD = 15V, nS Turn-Off Delay Time 2 td(off) ID ≅ 25A, VGS = 10V, RGEN = 25Ω 88 Fall Time2 tf 35 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 39 A 1 VSD IF = IS, VGS = 0V 1.3 Forward Voltage V Reverse Recovery Time trr VGS = 0V, IS = 30A, 55 nS Reverse Recovery Charge Qrr dlF/dt = 100A / μS 25 nC 1 Pulse test : Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2％. 2 Independent of operating temperature.
