EMB07N03HR

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:
D
BVDSS 30V
RDSON (MAX.) 7mΩ
ID 50A G

UIS, Rg 100% Tested S

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT

Gate‐Source Voltage VGS ±20 V

TC = 25 °C 50
Continuous Drain Current ID
TC = 100 °C 35 A

Pulsed Drain Current1 IDM 140

Avalanche Current IAS 37.5

Avalanche Energy L = 0.1mH, ID=37.5A, RG=25Ω EAS 70

mJ
2
Repetitive Avalanche Energy L = 0.05mH EAR 15

TC = 25 °C 50
Power Dissipation PD W
TC = 100 °C 20

Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C

100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT

Junction‐to‐Case RJC 2.5

°C / W
3
Junction‐to‐Ambient RJA 50
1
Pulse width limited by maximum junction temperature.
2
Duty cycle  1％
3
50°C / W when mounted on a 1 in2 pad of 2 oz copper.

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ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT

MIN TYP MAX

STATIC
Drain‐Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.7 3.0
Gate‐Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 A
VDS = 20V, VGS = 0V, TJ = 125 °C 25
On‐State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 50 A
1
Drain‐Source On‐State Resistance RDS(ON) VGS = 10V, ID = 25A 5.5 7
mΩ
VGS = 4.5V, ID = 20A 6.5 9
Forward Transconductance1 gfs VDS = 5V, ID = 20A 18 S

DYNAMIC
Input Capacitance Ciss 1014
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 163 pF

Reverse Transfer Capacitance Crss 93

Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz 2.2 Ω
1,2
Total Gate Charge Qg(VGS=10V) 15
Qg(VGS=4.5V) VDS = 15V, VGS = 10V, 8.5 nC
1,2 ID = 25A
Gate‐Source Charge Qgs 3.3
1,2
Gate‐Drain Charge Qgd 3.5
1,2
Turn‐On Delay Time td(on) 10
Rise Time1,2 tr VDS = 15V, 10 nS
1,2
Turn‐Off Delay Time td(off) ID = 20A, VGS = 10V, RGS = 2.7Ω 20
1,2
Fall Time tf 15

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current IS 50
A
3
Pulsed Current ISM 140
Forward Voltage1 VSD IF = IS, VGS = 0V 1.3 V
Reverse Recovery Time trr 20 nS
Peak Reverse Recovery Current IRM(REC) IF = IS, dlF/dt = 100A / S 180 A
Reverse Recovery Charge Qrr 11 nC

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1
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB07N03HR for EDFN 5 x 6

B07
B07N03R: Device Name
N03R
ABCDEFG ABCDEFG: Date Code

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TYPICAL CHARACTERISTICS
On‐Region Characteristics On‐Resistance Variation with Drain Current and Gate Voltage
100 1.8

V = 10V
GS
ID ,Drain‐Source Current( A )

80 1.6
7V

Drain‐Source On‐Resistance
6V
5V

RDS(ON) ,Normalized
60 1.4
4.5V VGS = 4.5V

5V
40 1.2

6V
7V
10V
20 1.0

0 0.8
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 20 40 60 80 100
VDS ,Drain‐Source Voltage( V ) I D ,Drain Current( A )

On‐Resistance Variation with Temperature On‐Resistance Variation with Gate‐Source Voltage

1.8 0.025

I D = 25A ID = 20A
V GS = 10V
Drain‐Source On‐Resistance

1.6 0.020
R DS(ON) ,Normalized

RDS(ON) ,ON‐RESISTANCE(OHM)

1.4
0.015

1.2

0.010
1.0 TA = 125°C

0.005 TA = 25°C
0.8

0.6 0
‐50 ‐25 0 25 50 75 100 125 150 2 4 6 8 10
Tj ,Junction Temperature(°C ) VGS ,Gate‐Source Voltage( V )

Body Diode Forward Voltage Variation

Transfer Characteristics with Source Current and Temperature
50 60
VDS = 10V
T A = ‐55 °C VGS = 0V
25 °C 10
40
I ,Reverse Drain Current( A )
ID ,Drain Current( A )

125 °C 1
30

0.1
20
TA = 125°C 25°C ‐55°C
0.01

10
S

0.001

0 0.0001
0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VGS ,Gate‐Source Voltage( V ) VSD ,Body Diode Forward Voltage( V )

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G a te C h a r g e C h a r a c te r is tic s C a p a c it a n c e C h a r a c t e r is t ic s
4
12 10

ID = 2 5 A

10

C‐Capacitance( pF )
V DS =5V 3
C is s
VGS ,Gate-Source Voltage( V )

8 10
10V

15V
6

C o ss
2
4 10
C rss

2
f = 1 M Hz
V G S= 0 V
0 10
0 5 10 15 20 25 30
0 3 6 9 12 15 18 21
V DS ‐ D r a in ‐ S o u r c e V o lt a g e ( V )
Q g ,G a te C h a rg e ( n C )

Maximum Safe Operating Area Single Pulse Maximum Power Dissipation

300 3000
SINGLE PULSE
RθJC = 2.5°C/W
it TC = 25°C
n)
Lim
100 R ds(o 10μ 2500
s
ID ,Drain Current( A )

100μ
2000
Power( W )

1m
s
10 1 0m 1500
1 00 s
ms
DC
1000

VGS = 10V 500

1 SINGLE PULSE
RθJC = 2.5°C/W
Tc = 25°C
0.5 0
0.5 1 10 100 0.01 0.1 1 10 100 1000
VDS ,Drain‐Source Voltage( V ) Single Pulse Time ( mSEC )

T r a n s ie n t T h e rm a l R e s p o n s e C u rv e
1
D u ty C y c le = 0 .5
Transient Thermal Resistance
r(t),Normalized Effective

0 .2

0 .1
0 .1
0 .0 5
N o te s :
DM

0 .0 2
0 .0 1 1 .D u ty C y c le ,D = t 2
t1

2 .R θ = 2 .5 °C / W
JC

3 .T J ‐ T C = P * R (t)
S in g le P u ls e θ JC

4 .R (t)= r(t) * R
0 .0 1
θ JC θ JC

‐2 ‐1
10 10 1 10 100 1000
t 1 ,T im e ( m S E C )

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Outline Drawing

I J K L D
M

E A

F
G B
C

Dimension in mm
Dimension A B C D E F G H I J K L M

Min. 4.80 5.50 5.90 0.3 0.85 0.15 3.67 0.41 3.00 0.94 0.45 0∘

Typ. 1.27

Max. 5.30 5.90 6.15 0.51 1.20 0.30 4.54 0.85 3.92 1.7 0.71 12∘

Recommended minimum pads

4,42
1,02

3,81
6,61

0,82
1,27

0,61 1,27
0,66

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