This document provides solutions to multiple physics problems related to semiconductor materials and devices. It gives calculations and numerical solutions for resistivity, carrier concentration, doping concentration, drift velocity, and more. Key findings include the intrinsic carrier concentration in silicon at different temperatures, the threshold temperature for silicon to become intrinsic, and calculations of carrier concentrations and types for a doped semiconductor material.
This document provides solutions to multiple physics problems related to semiconductor materials and devices. It gives calculations and numerical solutions for resistivity, carrier concentration, doping concentration, drift velocity, and more. Key findings include the intrinsic carrier concentration in silicon at different temperatures, the threshold temperature for silicon to become intrinsic, and calculations of carrier concentrations and types for a doped semiconductor material.
This document provides solutions to multiple physics problems related to semiconductor materials and devices. It gives calculations and numerical solutions for resistivity, carrier concentration, doping concentration, drift velocity, and more. Key findings include the intrinsic carrier concentration in silicon at different temperatures, the threshold temperature for silicon to become intrinsic, and calculations of carrier concentrations and types for a doped semiconductor material.
This document provides solutions to multiple physics problems related to semiconductor materials and devices. It gives calculations and numerical solutions for resistivity, carrier concentration, doping concentration, drift velocity, and more. Key findings include the intrinsic carrier concentration in silicon at different temperatures, the threshold temperature for silicon to become intrinsic, and calculations of carrier concentrations and types for a doped semiconductor material.
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ĐÁP ÁN BÀI TẬP 2.1 – 2.10, 2.14, 2.16, 2.17, 2.18, 2.23, 2.24, 2.25, 2.29, 2.
33, 2.35, 2.38, 2.41, 2.43, 2.45, 2.47, 2.48
2.1 Based upon Table 2.1, a resistivity of 2.82 -cm < 1 m-cm, and aluminum is a conductor.
2.2 Based upon Table 2.1, a resistivity of 1015 -cm > 105 -cm, and silicon dioxide is an insulator.
2.3
( I max = 10 7 A cm 2)( 5 mm )( 1 mm () mm2 ) 10−8 cm2 =500 mA
2.4
( a ) R= ρ =( 2.82 x 10−6 Ω−cm ) √ −4
L 1.8 2cm =144 Ω A ( 5 x 10 cm )( 1x 10 −4 cm ) ( b ) R= ρ =( 2.82 x10−6 Ω−cm ) √ −4 L 1.8 2cm =287Ω A ( 5 x 10 cm )( 0.5 x 10 −4 cm ) 2.5
( a ) R= ρ =( 1.66 x 10−6 Ω−cm ) √ −4
L 1.8 2cm =94.5Ω A ( 5 x 10 cm )( 1 x10 −4 cm ) ( b ) R= ρ =( 1.66 x 10−6 Ω−cm ) √ −4 L 1.8 2cm =169Ω A ( 5 x 10 cm )( 0.5x 10 cm ) −4
2.6
n2i =BT 3 exp − ( )EG
kT B=1 .08 x 1031
( ( 1010 )2 =1. 08 x 10 31 T 3 exp −1 .12 8 . 62 x 10−5 T ) Using a spreadsheet, solver, or MATLAB yields T=305 . 23K Define an M-File: function f=temp(T) f=1e20-1.08e31*T^3*exp(-1.12/(8.62e-5*T)); Then: fzero('temp',300) | ans = 305.226 K 2.7
√ ni = BT 3 exp − ( 8 .62 x 10 T EG −5 ) For silicon, B = 1.08 x 1031 and EG = 1.12 eV: ni = 5.07 x10-19/cm3 6.73 x109/cm3 1.69 x 1013/cm3. For germanium, B = 2.31 x 1030 and EG = 0.66 eV: ni = 2.63 x10-4/cm3 2.27 x1013/cm3 2.93 x 1015/cm3.
2.8 (a) Define an M-File: function f=temp(T) ni=1E15; f=ni^2-1.08e31*T^3*exp(-1.12/(8.62e-5*T));
ni = 1015/cm3 for T = 602 K
15 ( b ) N D=10 /cm 3 , n2i =1015 / cm 3 :n= 10 15 √ 2 2 + ( 1015 ) + 4 ( 1015 ) =1 .62 x 10 15 /cm 3 2 n 2i 1030 p= = =6 . 18 x 1014 /cm 3 n 1. 62 x 10 15
( c ) At room temperature, N D >> n2i .
n2i 1020 ∴ n=N D=10 electrons/cm and p= = 15 =105 holes/cm 3 15 3 n 10
2.9
√ ni = BT 3 exp − ( EG 8 .62 x 10 T −5 ) with B=1. 27x1029 K −3 cm−6
T = 300 K and EG = 1.42 eV: ni = 2.21 x106/cm3
T = 100 K: ni = 6.03 x 10-19/cm3 T = 450 K: ni = 3.82 x1010/cm3
T = 300 K and EG = 1.42 eV: ni = 2.21 x106/cm3
T = 100 K: ni = 6.03 x 10-19/cm3 T = 450 K: ni = 3.82 x1010/cm3
2.10 ( v n =−μ n E= −700 )( cm2 V −s ) −2000 V cm =+1 . 40 x 106 cm s
v =+ μ E=(+250 ) V −s ( cm ) 2 cm V cm 5 p p −2000 =−5. 00 x 10 s
j =−qnv =( −1. 60 x 10 C ) ( 10 n n 1−19 cm ) ( 17 1 . 40 x 10 cm s )3 =2. 24 x 10 A 6 cm 4 2
p p ( cm ) j =qnv = ( 1. 60 x 10 C ) 10 1 −19 ( 3 −5 . 00 x 10 3 cm s ) 5 =−8. 00 x 10 A cm −11 2
2.14
v n =−μ n E=− 1000 ( cm2
V −s −1500 )( V cm =+1 . 50 x 106 s) cm
v p =+ μ p E =+ 400 ( cm 2 V −s −1500 )(V cm ) =−6 . 00 x 105 cm s 1 ( jn =−qnv n=( −1. 60 x 10−19 C ) 103 3 +1 .50 x 10 6 cm s)( cm A =−2 . 40 x 10−10 2 cm ) 1 ( j p =qnv p= ( 1. 60 x 10−19 C ) 1017 3 −6 .00 x 105 cm )( cm s A =−9 . 60 x 103 2 cm) 2.16 For intrinsic silicon, σ =q ( μn ni +μ p ni ) =qni ( μ n +μ p ) −5 −1 Using MATLAB as in σ ≤10 ( Ω−cm ) for an insulator Problem 2.6 yields T ≤ σ 10−5 ( Ω−cm )−1 2. 497 x 10 10 316.6 K. ni = ≤ = 3 q ( μ n +μ p ) ( ) 2 cm cm ( 1. 602 x10−19 C ) ( 1800+700 ) v−sec
( ) 20 E 2.17 2 5 .152 x 10 ni = 6 =BT 3 exp − G with This is a transcendental cm kT equation and must be B=1 .08 x 10 K cm , k =8 . 62x10-5 eV/K and EG=1 . 12eV 31 −3 −6 solved numerically by iteration. Using the HP solver routine or a spread sheet yields T ≥ 2579.3 K. Note that this temperature is far above the melting temperature of silicon.
2.18 No free electrons or holes (except those corresponding to ni).
2.24 (a) Since boron is an acceptor, NA = 7 x 1018/cm3. Assume ND = 0, since it is not specified. The material is p-type. (b ) At room temperature, ni=1010 /cm 3 and N A−N D=7 x 1018 /cm3 >> 2n i 18 n2i 1020 /cm6 3 So p=7 x 10 /cm and n= = =14 . 3 /cm 3 18 p 7 x 10 /cm 3
5 . 28 x 109 ni=7 . 27 x10 4 /cm3 N A −N D >> 2 ni , so p=7 x 10 18 /cm 3 and n= 18 =7 . 54 x10−10 /cm 3 7 x 10
2.25 (a) Since arsenic is a donor, N D = 3 x 1017/cm3. Assume NA = 0, since it is not specified. The material is n-type. ( b ) At room temperature, ni =1010 /cm3 and N D−N A =3 x 1017 /cm 3 >> 2n i n2i 1020 /cm6 So n=3 x 1017 /cm 3 and p= = =333 /cm 3 n 3 x 1017 /cm 3 2 31 3 (c) At 250K, ni =1. 08 x10 ( 250 ) exp − ( 1. 12 −5 ) 8 .62 x10 ( 250 ) 15 =4 .53 x10 /cm 6
4 .53x10 15 ni=6. 73 x107 /cm 3 17 3 N D −N A >>2ni , so n=3 x 10 /cm and n= 17 =0 . 0151/cm3 3x10
2.29 N A >N D : N A −N D =5 x 1016−1016=4 x 1016 /cm 3 >> 2n i=2 x 1011 /cm 3 16 n2i 1022 3 p=N A −N D=4 x 10 /cm | n= = =2. 50 x 105 /cm 3 p 4 x 10 16
The material is p-type .
2.33 Phosphorus is a donor: N D =4 . 5 x 1016 /cm 3| Boron is an acceptor: N A =5 .5 x 10 16 /cm 3 N A >N D : The material is p-type . | N A −N D =1016 /cm 3 >> 2 ni=2 x 10 10 /cm 3 n2i 1020 p=10 /cm | n= = 16 =104 /cm 3 16 3 p 10 17 3 cm 2 cm 2 N D+N A =10 /cm | Using Fig . 2 .8, μn =727 and μ p =153 V −s V −s 1 1 ρ= = =4 . 08 Ω−cm ( )( ) qμn n −19 cm 2 1016 1 .602 x 10 C 153 V −s cm 3
2.35 1 1 1.25 x 1019 ρ= | m p p= = qm p p ( 1.602 x 10−19 C ) ( 0.5 Ω−cm ) V −cm−s An iterative solution is required. Using the equations in Fig. 2.8 and trial and error:
NA p p p
1016 318 3.18 x 1018
4 x 1016 214 8.55 x 1018 7.5 x 1016 170 1.28 x 1019 7.2 x 1016 173 1.25 x 1019
2.38 Based upon the value of its resistivity, the material is an insulator. However, it is not intrinsic because it contains impurities. The addition of the impurities has increased the resistivity. Since N D−N A =0 , n= p=ni , and σ =q ( μn ni +μ p ni ) =qni ( μ n +μ p ) N A +N D=10 20 /cm3 which yields μ p =45 . 9 and μn =64 . 3 using the equations from Fig. 2. 8 . 1 1 6 σ= ≤ =5 . 66 x 10 Ω-cm qni ( μ n +μ p ) ( ) 2 cm ( 1. 602 x 10−19 C )( 1010 cm−3 ) ( 64 .3+45 . 9 ) v−sec
2.41 Boron is an acceptor: NA = 1016/cm3 and p = 318 cm2/V-s from equations with Fig. 2.8. 0 .509 σ =qμ p p≈qμ p N A =( 1 .602 x 10−19 C ) ( 318 ) ( 1016 ) = Ω−cm Now we add donors until = 4.5 (-cm) -1: 4 . 5 (Ω−cm )−1 2. 81 x 1019 σ =qμn n | μn n≈μ n ( N D−N A )= = 1. 602 x 10−19 C V −cm−s
Using trial and error:
ND ND + NA n ND - NA n n
8 x 1016 9 x 1016 752 7 x 1016 5.26 x 1019
5 x 1016 6 x 1016 845 4 x 1016 3.38 x 1019 4 x 1016 5 x 1016 885 3 x 1016 2.66 x 1019 4.2 x 1016 5.2 x 1016 877 3.2 x 1016 2.81 x 1019
2.43 −23 kT 1. 38 x 10 T V T= = =8 . 62 x 10−5 T q 1. 602 x 10−19
j =-qD p dp dx =(−1 .602 x10−19 C ) 15 cm2 s − ( 1019 /cm3 −4 2 x 10 cm )( exp − x 2 x10−4 cm ) ( ) j=1. 20 x 105 exp −5000 ( x A cm cm 2 ) ( ) ( ) −8 2 5A 2 10 cm ( ) ( ) ( I 0 = j 0 A= 1. 20 x 10 2 10 mm ) =12 .0 mA cm mm 2
2.47 At x = 0: j drift ( n =qμ n nE= 1. 60 x 10 −19 ( )( )( ) C ) 350 cm2 1016 V −s cm 3 +25 V cm A =14 . 0 2 cm
=qμ pE=( 1 . 60 x 10 C ) (150 ) ( ) ( +25 )=+ 606
2 18 cm 1. 01 x 10 V A j drift p p −19 V −s cm 3 cm cm 2
=( 1 . 60 x 10 C ) (350⋅0 . 025 ) ( ) 2 4 16 dn cm 10 −10 A j diff n =qD n −19 =−70 .0 dx s 2 x 10 cm −4 4 cm 2
s )(2 x 10 cm ) cm =(−1 .60 x 10 C ) (150⋅0. 025 2 18 18 dp cm 10 −1 . 01 x 10 A j diff p =−qD p −19 −4 =30. 4 0 2 dx A j T =14 . 0+607−70. 0+30 . 0 =+580 2 cm
Download the complete Solution Manual for Microelectronic Circuit Design 5th Edition Jaeger Blalock 0073529605 9780073529608 book instantly in PDF format.
Download the complete Solution Manual for Microelectronic Circuit Design 5th Edition Jaeger Blalock 0073529605 9780073529608 book instantly in PDF format.
