This document contains solutions to exercises from a semiconductor physics textbook chapter.
It first solves problems involving determining lifetimes, generation and recombination rates for electrons and holes in an n-type silicon sample.
It then calculates the generation rate of electron-hole pairs from light absorption in a semiconductor, and the resulting steady-state excess carrier concentration.
Further problems calculate minority carrier concentrations over time for silicon samples in different doping and generation conditions.
The last problems determine electron and hole diffusion coefficients and mobilities in germanium, and derive the general solution to the diffusion equation to describe excess minority carrier distributions.
This document contains solutions to exercises from a semiconductor physics textbook chapter.
It first solves problems involving determining lifetimes, generation and recombination rates for electrons and holes in an n-type silicon sample.
It then calculates the generation rate of electron-hole pairs from light absorption in a semiconductor, and the resulting steady-state excess carrier concentration.
Further problems calculate minority carrier concentrations over time for silicon samples in different doping and generation conditions.
The last problems determine electron and hole diffusion coefficients and mobilities in germanium, and derive the general solution to the diffusion equation to describe excess minority carrier distributions.
This document contains solutions to exercises from a semiconductor physics textbook chapter.
It first solves problems involving determining lifetimes, generation and recombination rates for electrons and holes in an n-type silicon sample.
It then calculates the generation rate of electron-hole pairs from light absorption in a semiconductor, and the resulting steady-state excess carrier concentration.
Further problems calculate minority carrier concentrations over time for silicon samples in different doping and generation conditions.
The last problems determine electron and hole diffusion coefficients and mobilities in germanium, and derive the general solution to the diffusion equation to describe excess minority carrier distributions.
This document contains solutions to exercises from a semiconductor physics textbook chapter.
It first solves problems involving determining lifetimes, generation and recombination rates for electrons and holes in an n-type silicon sample.
It then calculates the generation rate of electron-hole pairs from light absorption in a semiconductor, and the resulting steady-state excess carrier concentration.
Further problems calculate minority carrier concentrations over time for silicon samples in different doping and generation conditions.
The last problems determine electron and hole diffusion coefficients and mobilities in germanium, and derive the general solution to the diffusion equation to describe excess minority carrier distributions.
6.3 An n-type silicon sample contains a donor concentration of Nd = 1016 cm-3. The minority carrier hole lifetime is found to be τp0 = 20 µs. (a) What is the lifetime of the majority carrier electrons? (b) Determine the thermal-equilibrium generation rate for electrons and holes in this material. (c) Determine the thermal-equilibrium recombination rate for electrons and holes in this material.
6.4 (a) A sample of semiconductor has a cross-sectional area of 1 cm2 and a thickness of 0.1 cm. Determine the number of electron–hole pairs that are generated per unit volume per unit time by the uniform absorption of 1 watt of light at a wavelength of 6300 Å. Assume each photon creates one electron–hole pair. (b) If the excess minority carrier lifetime is 10 µs, what is the steady-state excess carrier concentration?
TYU 6.1 Silicon at T = 300 K has been doped with boron atoms to a concentration of Na = 5 × 1016 cm-3. Excess carriers have been generated in the uniformly doped material to a concentration of 1015 cm-3. The minority carrier lifetime is 5 µs. (a) What carrier type is the minority carrier? (b) Assuming g’ = E = 0 for t > 0, determine the minority carrier concentration for t > 0.
TYU 6.2 Consider silicon with the same parameters as given in TYU 6.1. The material is in thermal equilibrium for t < 0. At t = 0, a source generating excess carriers is turned on, producing a generation rate of g’ = 1020 cm-3-s-1. (a) What carrier type is the minority carrier? (b) Determine the minority carrier concentration for t > 0. (c) What is the minority carrier concentration as t → ∞? Exercise Solutions
6.3 (a) Recombination rates are equal no po = τ nO τ pO n o = N d = 1016 cm −3 n2 po = i = ( 1.5 × 1010 )2
= 2.25 × 10 4 cm −3 no 1016 Then 1016 2.25 × 10 4 = τ nO 20 × 10 − 6 which yields τ nO = 8.89 × 10 +6 s (b) Generation rate = recombination rate Then 2.25 × 10 4 G= = 1.125 × 10 9 cm −3 s −1 20 × 10 − 6 (c) R = G = 1.125 × 10 9 cm −3 s −1
6.4
(a) E = hν = hc = (6.625 ×10 )(3 ×10 ) −34 8
λ 6300 × 10 −10
or E = 3.15 × 10 −19 J; energy of one photon Now 1 W = 1 J/s ⇒ 3.17 × 1018 photons/s Volume = (1)(0.1) = 0.1 cm 3 Then 3.17 × 1018 g= 0.1 = 3.17 × 1019 e-h pairs/cm 3 -s (b) δn = δp = gτ = (3.17 × 1019 )(10 × 10 −6 ) or δn = δp = 3.17 × 1014 cm −3
6.10 For Ge: n i = 2.4 × 1013 cm −3 2 Nd N no = + d + n i2 2 2 2 4 × 1013 = 4 × 1013 + ( + 2.4 × 1013 ) 2
2 2 = 5.124 × 1013 cm −3
po = n i2 = ( 2.4 × 1013 ) 2
= 1.124 × 1013 cm −3 n o 5.124 × 1013 (a) We have: µ n = 3900 cm 2 /V-s, D n = 101 cm 2 /s µ p = 1900 cm 2 /V-s, D p = 49.2 cm 2 /s For very, very low injection, D n D p (n + p ) D′ = Dn n + D p p
= (101)(49.2)(5.124 ×1013 + 1.124 ×1013 ) (101)(5.124 ×1013 ) + (49.2)(1.124 ×1013 ) = 54.2 cm 2 /s and µ n µ p ( p − n) µ′ = µnn + µ p p
= (3900)(1900)(1.124 ×1013 − 5.124 ×1013 ) (3900)(5.124 ×1013 ) + (1900)(1.124 ×1013 ) = −1340 cm 2 /V-s (b) For holes, t pt = t p 0 = 2 × 10 −6 s For electrons, n p = t nt t p0 5.124 × 1013 1.124 × 1013 = t nt 2 × 10 − 6 ⇒ t nt = 9.12 × 10 −6 s _______________________________________
6.11 σ = eµ n n + eµ p p With excess carriers n = n o + δn and p = p o + δp For an n-type semiconductor, we can write δn = δp ≡ δp Then σ = eµ n (n o + δp ) + eµ p ( p o + δp ) or σ = eµ n n o + eµ p p o + e(µ n + µ p )(δp ) so ( ∆σ = e µ n + µ p (δp ) ) In steady-state, δp = g ′τ pO So that ∆σ = e(µ n + µ p )(g ′τ pO ) _______________________________________
6.12 (a) p o = N a = 1016 cm −3
no = n i2 = ( 1.5 × 1010 ) 2
= 2.25 × 10 4 cm −3 po 1016 σ = eµ n (n o + δn ) + eµ p ( p o + δp ) ≅ eµ p p o + e µ n + µ p δn ( ) Now δn = δp = g ′t n 0 (1 − e −t / t n 0 ) ( )( ) )( = 8 × 10 20 5 × 10 −7 1 − e −t / t n 0 = 4 × 10 ) cm 14 (1 − e −t / t n 0 −3
6.22 n-type, so we have d 2 (dp ) d (dp ) dp Dp − µ pΕo − =0 dx dx τ pO Assume the solution is of the form δp = A exp(sx ) Then d (dp ) d 2 (dp ) = As exp(sx ) , = As 2 exp(sx ) dx dx 2 Substituting into the differential equation D p As 2 exp(sx ) − µ p Ε o As exp(sx ) A exp(sx ) − =0 τ pO or 1 Dp s2 − µ pΕo s − =0 τ pO Dividing by D p , we have µ pΕo 1 s2 − s− =0 Dp L2p The solution for s is 2 1 µp µp 4 s= Εo ± Ε + 2 2 Dp Dp o Lp which can be rewritten as 2 1 µ p LpΕo µ p LpΕo + 1 s= ± Lp 2D p 2D p Define µ p LpΕo β≡ 2D p Then 1 s= β ± 1 + β 2 L p In order that δp = 0 as x → +∞ , use the minus sign for x > 0 and the plus sign for x < 0 . Then the solution is δp = A exp(s − x ) for x > 0 δp = A exp(s + x ) for x < 0 where 1 s± = β ± 1 + β 2 L p _______________________________________
Ex 6.7 p o = N a − N d = 1016 − 3 × 1015 = 7 × 1015 cm −3
no = n i2 = ( 1.5 × 1010 )2
= 3.214 × 10 4 cm −3 po 7 × 1015 (a) In thermal equilibrium, p E Fi − E F = kT ln o ni 7 × 1015 = (0.0259 ) ln 1.5 × 10 10 = 0.33808 eV
(b) Quasi-Fermi levels,
p + δp E Fi − E Fp = kT ln o ni 7 × 1015 + 4 × 1014 = (0.0259 ) ln 1.5 × 1010 = 0.33952 eV n + δn E Fn − E Fi = kT ln o ni 3.214 × 10 4 + 4 × 1014 = (0.0259 ) ln 1.5 × 1010 = 0.26395 eV _______________________________________
Ex 6.8 n-type; n o = 1015 cm −3 , p o = 2.25 × 10 5 cm −3 δn = δp = 1014 cm −3 , τ no = τ po = 5 × 10 −7 s We have
R= [(n + δn )( p o + δp ) − n i2 o ] τ po (n o + δn + n i ) + τ no ( p o + δp + n i )
[( )( ) ( ≅ 1015 + 1014 1014 − 1.5 × 1010 )] 2
÷ {(5 × 10 )(10 + 10 ) + (5 × 10 )(10 )}
−7 15 14 −7 14
or R = 1.83 × 10 20 cm −3 s −1 _______________________________________ 6.41 (a) From Equation (6.56) d 2 (dp ) dp Dp + g′− =0 dx 2 τ pO Solution is of the form −x δp = g ′τ pO + A exp + B exp + x Lp Lp
At x = +∞ , δp = g ′τ pO so that B = 0 , Then −x δp = g ′τ pO + A exp Lp We have d (dp ) Dp = s(dp ) dx x =0 x =0
We can write d (dp ) −A = and (δp ) = g ′τ pO + A dx x =0 Lp x =0
Then − AD p Lp ( = s g ′τ pO + A ) Solving for A , we find − sg ′τ pO A= Dp +s Lp The excess concentration is then s − x δp = g ′τ pO 1 − ⋅ exp (D p Lp + s ) L p where L p = D pτ pO = (10)(10 −7 ) = 10 −3 cm Now δp = (10 21 )(10 −7 ) × 1 − s ⋅ − x ( ) exp −3 10 10 + s L p
or s − x δp = 1014 1 − ⋅ exp 10 + s L p 4 (i) For s = 0 , δp = 1014 cm −3 (ii) For s = 2000 cm/s, − x δp = 1014 1 − 0.167 exp L p (iii) For s = ∞ , − x δp = 1014 1 − exp L p
(b) (i) For s = 0 , δp(0) = 1014 cm −3 (ii) For s = 2000 cm/s, δp(0) = 0.833 × 1014 cm −3 (iii) For s = ∞ , δp(0) = 0 _______________________________________
