This document provides product information and specifications for International Rectifier's IRF450 HEXFET transistor. Key details include:
- The IRF450 is a 500V, N-channel MOSFET with low on-resistance of 0.4 ohms and continuous drain current rating of 12A.
- It features repetitive avalanche ratings, high dv/dt capability, hermetic sealing, simple drive requirements, and ease of paralleling.
- Electrical characteristics and maximum ratings are provided in tables, along with typical output, transfer, and capacitance curves.
- Applications include switching power supplies, motor controls, inverters, and audio amplifiers.
This document provides product information and specifications for International Rectifier's IRF450 HEXFET transistor. Key details include:
- The IRF450 is a 500V, N-channel MOSFET with low on-resistance of 0.4 ohms and continuous drain current rating of 12A.
- It features repetitive avalanche ratings, high dv/dt capability, hermetic sealing, simple drive requirements, and ease of paralleling.
- Electrical characteristics and maximum ratings are provided in tables, along with typical output, transfer, and capacitance curves.
- Applications include switching power supplies, motor controls, inverters, and audio amplifiers.
This document provides product information and specifications for International Rectifier's IRF450 HEXFET transistor. Key details include:
- The IRF450 is a 500V, N-channel MOSFET with low on-resistance of 0.4 ohms and continuous drain current rating of 12A.
- It features repetitive avalanche ratings, high dv/dt capability, hermetic sealing, simple drive requirements, and ease of paralleling.
- Electrical characteristics and maximum ratings are provided in tables, along with typical output, transfer, and capacitance curves.
- Applications include switching power supplies, motor controls, inverters, and audio amplifiers.
This document provides product information and specifications for International Rectifier's IRF450 HEXFET transistor. Key details include:
- The IRF450 is a 500V, N-channel MOSFET with low on-resistance of 0.4 ohms and continuous drain current rating of 12A.
- It features repetitive avalanche ratings, high dv/dt capability, hermetic sealing, simple drive requirements, and ease of paralleling.
- Electrical characteristics and maximum ratings are provided in tables, along with typical output, transfer, and capacitance curves.
- Applications include switching power supplies, motor controls, inverters, and audio amplifiers.
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PD - 90330F
REPETITIVE A ALANCHE AND dv/dt RATED V
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400 ID 12A
IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL
The HEXFETtechnology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Parameter ID @ VGS =0V, TC = 25C ID @ VGS = 0V, TC = 100C I DM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 12 7.75 48 150 1.2 20 8.0 12 3.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5(typical)
Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 10V, ID = 7.75A VGS = 10V, ID =12A VDS = VGS, ID =250A VDS > 15V, IDS = 7.75A VDS=400V, VGS=0V VDS = 400V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID=12A VDS = 250V VDD =250V, ID =12A, RG =2.35
Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
V S( ) A
IGSS I GSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
2700 600 240
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
12 48 1.7 1600 14
Test Conditions
V nS C
Tj = 25C, IS =12A, VGS = 0V Tj = 25C, IF =12A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance Parameter RthJC R thJA Junction to Case Junction to Ambient
Min Typ Max Units
0.83 30 C/W
Test Conditions Typical socket mount
For footnotes refer to the last page
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IRF450
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF450
13 a& bb 13 a&
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF450
V DS VGS RG
RD
D.U.T. +
-V DD
10V Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VDS 90%
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF450
1 5V
VD S
D R IV E R
RG
D .U .T IA S
+ V - DD
10V 20V tp
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10V QGS VG QGD VGS 3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF450
Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = 25C, Peak IL = 12A,
Case Outline and Dimensions TO-204AA (Modified TO-3)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 01/01
