PD - 90879C

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE)

Product Summary
Part Number Radiation Level R DS(on) IRH9150 100K Rads (Si) 0.075 IRH93150 300K Rads (Si) 0.075

IRH9150 100V, P-CHANNEL

RAD Hard HEXFET TECHNOLOGY

ID -22A -22A

International Rectifiers RADHard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

TO-204AE

Features:
n n n n n n n n n

Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight

Absolute Maximum Ratings

Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ T C = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -22 -14 -88 150 1.2 20 500 -22 1.5 -23 -55 to 150

Pre-Irradiation
Units A
W
W/C

V mJ A mJ V/ns
o

C
g

300 ( 0.063 in.(1.6mm) from case for 10s) 11.5 (Typical )

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02/18/03

IRH9150

Pre-Irradiation

Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)

Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current

Min
-100 -2.0 11

Typ Max Units

-0.093 10 0.075 0.080 -4.0 -25 -250 -100 100 200 35 48 40 150 100 190 V V/C V S( ) A

Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -14A VGS = -12V, ID = -22A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -14A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -22A VDS = -50V VDD =-50V, ID = -22A VGS =-12V, RG = 2.35

IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD

Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance

nA

nC

ns

nH

Measured from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from

Package) with Source wires internally bonded from Source Pin to Drain Pad

C iss Coss Crss

Input Capacitance Output Capacitance Reverse Transfer Capacitance

4300 1100 310

pF

VGS = 0V, VDS = -25V f = 1.0MHz

Source-Drain Diode Ratings and Characteristics

Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Min Typ Max Units

-22 -88 -3.0 250 1.5

Test Conditions

A
V nS C Tj = 25C, IS = -22A, V GS = 0V Tj = 25C, IF = -22A, di/dt -100A/s VDD -50V

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance
Parameter
RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink

Min Typ Max Units

0.83 30 0.12
C/W

Test Conditions
Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page

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Radiation Characteristics Pre-Irradiation

IRH9150

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation

Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Diode Forward Voltage
100K Rads(Si)1
300K Rads (Si)2

Units V nA A V

Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS=-80V, VGS =0V VGS = -12V, ID =-14A VGS = 0V, IS = -22A

Min -100 -2.0

Max -4.0 -100 100 -25 0.075 -3.0

Min -100 -2.0

Max -5.0 -100 100 -25 0.085 -3.0

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

Ion LE T MeV/(mg/cm)) 28 36.8 59.9 Energy (MeV) 285 305 345 Range (m) @VGS=0V Cu Br I 43 39 32.8 -100 -100 -60 @VGS=5V -100 -100 VD S(V) @VGS=10V -100 -70 @VGS=15V -70 -50 @VGS=20V -60 -40

-120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

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IRH9150

Pre-Irradiation

100

-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)


VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V

100


VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP

-5.0V
20s PULSE WIDTH  T = 25 C
J 1 10 100

-5.0V
20s PULSE WIDTH  T = 150 C
J 1 10 100

10

10

-VDS , Drain-to-Source Voltage (V)

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

3.0

ID = -22A 

R DS(on) , Drain-to-Source On Resistance (Normalized)

Drain-to-Source Current (A)

TJ = 25 C 

2.5

2.0

TJ = 150 C 

1.5

1.0

- I D,

10 5 6 7


V DS = -50V 20s PULSE WIDTH 8 9 10

0.5

- VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

0.0 -60 -40 -20

VGS = -12V 
0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( C)

Fig 4. Normalized On-Resistance Vs. Temperature

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Pre-Irradiation

IRH9150

7000

-VGS , Gate-to-Source Voltage (V)

6000


VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd

20

ID = -22A 

16

C, Capacitance (pF)

5000

Ciss 


VDS = -80V VDS = -50V VDS = -20V

4000

12

3000

2000

C oss Crss 
1 10 100

1000

0 0 40 80


FOR TEST CIRCUIT SEE FIGURE 13
120 160 200

-VDS , Drain-to-Source Voltage (V)

QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

100

1000

OPERATION IN THIS AREA LIMITED  BY R

DS(on)

-ISD , Reverse Drain Current (A)

TJ = 150 C 
10

-I I D , Drain Current (A)

100

 100us  1ms
10

TJ = 25 C 

 10ms

1 0.0

V GS = 0 V 
1.0 2.0 3.0 4.0


TC = 25 C TJ = 150 C Single Pulse
1 10 100 1000

-VSD ,Source-to-Drain Voltage (V)

-VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRH9150

Pre-Irradiation

24

VDS VGS RG

RD

20

D.U.T.
+

-I D , Drain Current (A)

16

VDD

VGS
12
Pulse Width 1 s Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

td(on) tr t d(off) tf

4
VGS

0 25 50 75 100 125 150

10%

TC , Case Temperature ( C)
90%

Fig 9. Maximum Drain Current Vs. Case Temperature

VDS

Fig 10b. Switching Time Waveforms

1 D = 0.50

Thermal Response (Z thJC )

0.20 0.1 0.10 0.05 0.02 0.01

0.01

SINGLE PULSE  (THERMAL RESPONSE)

0.001 0.00001


Notes: 1. Duty factor D =t 1 / t 2 2. Peak T J = P DM x ZthJC + T C 0.1 0.0001 0.001 0.01


PDM t1 t2 1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Pre-Irradiation

IRH9150

VDS

1200

EAS , Single Pulse Avalanche Energy (mJ)

RG
VGS -2 0V

D .U .T IA S tp
0 .0 1

VD D A D R IV E R

1000


ID -9.8A -14A BOTTOM -22A TOP

800

600

15V

400

Fig 12a. Unclamped Inductive Test Circuit

200

0 25 50 75 100 125 150

IAS

Starting TJ , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

tp V (BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

50K

QG

12V

.2F

.3F

-12 V
QGS VG QGD
VGS
-3mA

D.U.T.

+VDS

IG

ID

Current Sampling Resistors

Charge

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

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IRH9150

Pre-Irradiation

Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -25V, starting TJ = 25C, L=2.06mH Peak IL = -22A, V GS =-12V ISD -22A, di/dt -450A/s, VDD -100V, TJ 150C

Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions TO-204AE

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03

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