The document provides information on the AOP605 complementary enhancement mode field effect transistor (CEMFET). It consists of an n-channel MOSFET and p-channel MOSFET that form a high-speed power inverter suitable for various applications. Key specifications and characteristics of the n-channel and p-channel MOSFETs are provided such as maximum ratings, electrical characteristics, and typical curves showing parameters like on-resistance, capacitance, and switching performance.
The document provides information on the AOP605 complementary enhancement mode field effect transistor (CEMFET). It consists of an n-channel MOSFET and p-channel MOSFET that form a high-speed power inverter suitable for various applications. Key specifications and characteristics of the n-channel and p-channel MOSFETs are provided such as maximum ratings, electrical characteristics, and typical curves showing parameters like on-resistance, capacitance, and switching performance.
The document provides information on the AOP605 complementary enhancement mode field effect transistor (CEMFET). It consists of an n-channel MOSFET and p-channel MOSFET that form a high-speed power inverter suitable for various applications. Key specifications and characteristics of the n-channel and p-channel MOSFETs are provided such as maximum ratings, electrical characteristics, and typical curves showing parameters like on-resistance, capacitance, and switching performance.
The document provides information on the AOP605 complementary enhancement mode field effect transistor (CEMFET). It consists of an n-channel MOSFET and p-channel MOSFET that form a high-speed power inverter suitable for various applications. Key specifications and characteristics of the n-channel and p-channel MOSFETs are provided such as maximum ratings, electrical characteristics, and typical curves showing parameters like on-resistance, capacitance, and switching performance.
AOP605 Complementary Enhancement Mode Field Effect Transistor
General Description The AOP605 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications). AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical.
Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B
Max p-channel -30 20 -6.6 -5.3 -30 2.5 1.6 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
7.5 6 30 2.5 1.6 -55 to 150
W C
Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL Symbol t 10s Steady-State Steady-State RJA RJL
Typ 40 67 33 Typ 38 66 30
Max 50 80 40 Max 50 80 40
Units C/W C/W C/W Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AOP605
n-channel MOSFET Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=7.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6.0A Forward Transconductance VDS=5V, ID=7.5A 12 Body Diode Forward Voltage IS=1A, VGS=0V Maximum Body-DiodeContinuous Current TJ=125C 33 16 0.76 1 4 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.84 VGS=4.5V, VDS=15V, ID=7.5A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.0, RGEN=6 IF=7.5A, dI/dt=100A/s 4.1 20.6 5.2 16.5 7.8 20 3.6 16.6 8.1 820 43 1 30 22.6 28 1.8 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery time
Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 3 : June 2005 2
FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AOP605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any en given application application depends depends on the on the user's user's specific specific board board design. design. TheThe current current rating rating is based is based on the on the t t 10s 10s thermal thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. Rev 3 : June 2005 2
FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AOP605
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 1.0 10s 100s 1ms 10ms 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC Power (W)
40 TJ(Max)=150C TA=25C 30
-ID (Amps)
10.0
20
10
0 0.001
0.01
0.1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
