This document describes the PC817(D) 4 pin phototransistor photocoupler. It consists of an infrared emitting diode optically coupled to a phototransistor encapsulated in a green compound within a DIP package. Key features include a current transfer ratio of 50-600%, an isolation voltage of 5000Vrms, and operating temperature range of -40°C to 110°C. Applications include programmable controllers, home appliances, telecommunication equipment, and signal transmission between circuits of different potentials and impedances.
This document describes the PC817(D) 4 pin phototransistor photocoupler. It consists of an infrared emitting diode optically coupled to a phototransistor encapsulated in a green compound within a DIP package. Key features include a current transfer ratio of 50-600%, an isolation voltage of 5000Vrms, and operating temperature range of -40°C to 110°C. Applications include programmable controllers, home appliances, telecommunication equipment, and signal transmission between circuits of different potentials and impedances.
This document describes the PC817(D) 4 pin phototransistor photocoupler. It consists of an infrared emitting diode optically coupled to a phototransistor encapsulated in a green compound within a DIP package. Key features include a current transfer ratio of 50-600%, an isolation voltage of 5000Vrms, and operating temperature range of -40°C to 110°C. Applications include programmable controllers, home appliances, telecommunication equipment, and signal transmission between circuits of different potentials and impedances.
This document describes the PC817(D) 4 pin phototransistor photocoupler. It consists of an infrared emitting diode optically coupled to a phototransistor encapsulated in a green compound within a DIP package. Key features include a current transfer ratio of 50-600%, an isolation voltage of 5000Vrms, and operating temperature range of -40°C to 110°C. Applications include programmable controllers, home appliances, telecommunication equipment, and signal transmission between circuits of different potentials and impedances.
Description The 817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound.The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Features ◆ Current transfer ratio(CTR: 50~600% at IF =5mA, VCE =5V) ◆ High isolation voltage between inputand output (Viso=5000 V rms )
IP ◆ Creepage distance >7.62 mm. ◆ Operating temperature up to +110℃ ◆ Compact small outline package ◆ Pb free and RoHS compliant.
Applications ◆ Programmable controllers. H TC ◆ System appliances, measuring instruments. ◆ Telecommunication equipments. ◆ Home appliances, such as fan heaters, etc. ◆ Signal transmission between circuits of different potentials and impedances.
Absolute maximum ratings (Ta=25℃)
Parameter Symbol Rating Unit O
Forward current IF 50 mA Reverse voltage VR 6 V Input Power dissipation PD 70 mW Derating factor (above Ta = 100℃) 2.9 mW/℃ H
Power dissipation 150 mW PC 150 mW
Derating factor (above Ta = 100℃) 5.8 mW/℃ Output Collector current IC 50 mA Collector-Emitter voltage VCEO 35 V Emitter-Collector voltage VECO 6 V Total power dissipation PTOT 200 mW Isolation voltage *1 VISO 5000 V rms Operating temperature Topr -40~+110 ℃ Storage temperature Tstg -55~+125 ℃ Soldering temperature *2 Tsol 260 ℃
Reverse current IR - 10 uA VR = 4V Input capacitance Ct 30 250 pF V = 0, f = 1kHz
IP Output Parameter Symbol Min. Typ.* Max. Unit Condition Collector-Emitter darkcurrent ICEO - - 100 nA VCE = 20V, IF = 0mA Collector-Emitter BVCEO 35 - - V IC = 0.1mA breakdown voltage Emitter-Collector breakdown voltage BVECO H 6 - - V IE = 0.1mA TC Transfer characteristics (Ta=25℃ unless specified otherwise) Parameter Symbol Min. Typ.* Max. Unit Condition 817 50 - 600 817A 80 - 160 Current 817B 130 - 260 Transfer CTR % 817C 200 - 400 IF = 5mA ,VCE = 5V ratio 817D 300 - 600 O
817L 50 - 100 Collector-Emitter VCE(sat) 0.1 0.2 V IF =20mA ,IC = 1mA saturation voltage VIO = 500Vdc, Isolation resistance RISO 5×1010 Ω H
40~60% R.H Floating capacitance Cf 0.6 1.0 pF VIO = 0,f = 1MHz VCE = 5V,IC = 2mA Cut-off frequency fc 35 kHz RL = 100Ω,-3dB Rise time tr 4 18 μs VCE = 2V, IC =2mA,RL = 100Ω Fall time tf 3 18 μs Typical values at Ta = 25℃
