The NT140 is a photointerrupter that combines a GaAs infrared emitter with a phototransistor detector in a non-contact configuration. It has a resolution of 0.8mm and can detect objects without making contact. Its maximum ratings include a forward current of 50mA, reverse voltage of 6V, power dissipation of 75mW, and operating temperature range of -20°C to 65°C. Its electro-optical characteristics provide typical values for its input, output, and response times under various test conditions.
The NT140 is a photointerrupter that combines a GaAs infrared emitter with a phototransistor detector in a non-contact configuration. It has a resolution of 0.8mm and can detect objects without making contact. Its maximum ratings include a forward current of 50mA, reverse voltage of 6V, power dissipation of 75mW, and operating temperature range of -20°C to 65°C. Its electro-optical characteristics provide typical values for its input, output, and response times under various test conditions.
The NT140 is a photointerrupter that combines a GaAs infrared emitter with a phototransistor detector in a non-contact configuration. It has a resolution of 0.8mm and can detect objects without making contact. Its maximum ratings include a forward current of 50mA, reverse voltage of 6V, power dissipation of 75mW, and operating temperature range of -20°C to 65°C. Its electro-optical characteristics provide typical values for its input, output, and response times under various test conditions.
The NT140 is a photointerrupter that combines a GaAs infrared emitter with a phototransistor detector in a non-contact configuration. It has a resolution of 0.8mm and can detect objects without making contact. Its maximum ratings include a forward current of 50mA, reverse voltage of 6V, power dissipation of 75mW, and operating temperature range of -20°C to 65°C. Its electro-optical characteristics provide typical values for its input, output, and response times under various test conditions.
NT140 ●Features ●Dimensions Unit:mm · Combines high output GaAs IRED with high Unless othewise specified, the tolerances sensitive phototransistor. are ±0.2mm · Non-contact detecting manner. · Slit width(resolution): 0.8mm.
●Absolute Maximum Ratings(Ta=25℃)
Parameter Symbol Rating Unit Forward Current IF 50 mV Input
Reverse Voltage VR 6 V Power Dissipation P 75 mW Collector-Emitter Voltage VCEO 25 V Output
Emitter-Collector Voltage VECO 6 V Internal Circuit
Collector Power PC 50 mW Dissipation *Operating Temperature Topr -20～65 ℃ Storage Temperature Tstg -30～75 ℃ ** Soldering Temperature Tsol 260 ℃ *The special requirement could be met according to customer’s request. **Soldering time: 5s max. Soldering position: at least 1.5mm from the base of the package.
● Electro-Optical Characteristics (Ta=25℃)
Parameter Symbol Test Condition Min. Typ. Max. Unit Forward Voltage VF IF=20mA - 1.25 1.5 V Input Reverse Current IR VR=3V - - 10 μA Collector Dark Current ICEO VCE=20V - - 1 μA Output Collector Light Current IL VCE=5V IF=8mA 0.4 - - mA Collector-Emitter Saturation IF=8mA VCE(SAT) - - 0.4 V Voltage Ic=0.15mA Transfer Rise Time Tr IF=20mA VCE=5V - 5 - μS Response Character Time Fall Time Tf RC=100Ω - 5 - μS -istics
