This document is an examination question paper for an Electronics Devices and Circuits course. It contains two parts, Part A with short answer questions worth 25 marks total, and Part B with longer answer questions worth 50 marks total. Part B contains 5 units with two alternative questions provided in each unit worth 10 marks each. The questions cover topics such as PN junction diodes, tunnel diodes, rectifiers, transistors, biasing circuits, and JFETs and MOSFETs. Students are required to answer all of Part A and choose one question from each unit in Part B.
This document is an examination question paper for an Electronics Devices and Circuits course. It contains two parts, Part A with short answer questions worth 25 marks total, and Part B with longer answer questions worth 50 marks total. Part B contains 5 units with two alternative questions provided in each unit worth 10 marks each. The questions cover topics such as PN junction diodes, tunnel diodes, rectifiers, transistors, biasing circuits, and JFETs and MOSFETs. Students are required to answer all of Part A and choose one question from each unit in Part B.
This document is an examination question paper for an Electronics Devices and Circuits course. It contains two parts, Part A with short answer questions worth 25 marks total, and Part B with longer answer questions worth 50 marks total. Part B contains 5 units with two alternative questions provided in each unit worth 10 marks each. The questions cover topics such as PN junction diodes, tunnel diodes, rectifiers, transistors, biasing circuits, and JFETs and MOSFETs. Students are required to answer all of Part A and choose one question from each unit in Part B.
This document is an examination question paper for an Electronics Devices and Circuits course. It contains two parts, Part A with short answer questions worth 25 marks total, and Part B with longer answer questions worth 50 marks total. Part B contains 5 units with two alternative questions provided in each unit worth 10 marks each. The questions cover topics such as PN junction diodes, tunnel diodes, rectifiers, transistors, biasing circuits, and JFETs and MOSFETs. Students are required to answer all of Part A and choose one question from each unit in Part B.
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
B.Tech II Year I Semester Examinations, November/December - 2017 ELECTRONIC DEVICES AND CIRCUITS (Common to EEE, ECE, CSE, EIE, IT, MCT) Time: 3 Hours Max. Marks: 75
Note: This question paper contains two parts A and B.
Part A is compulsory which carries 25 marks. Answer all questions in Part A. Part B consists of 5 Units. Answer any one full question from each unit. Each question carries 10 marks and may have a, b, c as sub questions.
PART- A (25 Marks) 1.a) For what voltage will the reverse current in p-n junction Germanium diode reach 90% of its saturation value at room temperature? [2] b) Write a short note on Varactor diode. [3] c) Derive the ripple factor for full wave rectifier. [2] d) Explain voltage regulation using zener diode. [3] e) Explain how transistor acts as an amplifier. [2] f) Give the Comparisons between CB, CE, CC configurations. [3] g) Define thermal runaway. [2] h) Compare all the three biasing circuits. [3] -4 i) For a p-channel Silicon FET, with effective width ‘a’=2×10 cm and channel resistivity ρ =10 Ω. Find the pinch off voltage. [2] j) Draw the circuit diagram of fixed bias arrangement of a JFET. [3]
PART-B (50 Marks) 2.a) Explain PN diode characteristics in forward bias and reverse bias regions. b) Find the width of the depletion layer in a germanium junction diode which has the following specifications: Area A = 0.001 cm2, σn = 1 mhos / cm, µn = 3800 cm2/sec, µp = 1800 cm2/sec. [5+5] OR 3.a) Explain tunnel diode operation with the help of energy band diagrams. b) Explain the static characteristics of SCR. [5+5]
4.a) A full wave rectifier circuit with C-type capacitor filter is to supply a D.C. Current of 20 mA at 16V. If frequency is 50 Hz ripple allowed is 5%. Calculate: i) Required secondary voltage of the transformer. ii) Ratio of I peak/ Imax through diodes and the value of C required. b) With a neat circuit diagram and necessary wave forms explain the operation of half wave rectifier. [5+5] OR 5.a) An ac supply of 220V is applied to a half wave rectifier circuit through a transformer with a turns ratio of 10:1. Assume the ideal diode. Find: i) dc output voltage ii) PIV. b) Compare half wave, full wave and bridge rectifier circuits. [5+5]
www.ManaResults.co.in 6.a) Explain CE configuration with the help of input and output characteristics. b) A transistor is operated at a forward current of 2µA and with the collector open circuited. Calculate the junction voltages VC and VE, the collector to emitter voltage VCE assuming ICO = 2µA, IEO = 1.6µA and αN = 0.98. [5+5] OR 7.a) Draw and explain h-parameter model of BJT. b) Qualitatively explain the static V-I characteristics of UJT. [5+5]
8.a) Explain the need for biasing in electronic circuits. What are the factors affecting the stability factor. b) A transistor with β = 100 is to be used in Common Emitter Configuration with collector to base bias. The collector circuit resistance is RC = 1kΩ and VCC = 10V. Assume VBE = 0. i) Choose RB so that the quiescent collector to emitter voltage is 4V. ii) Find the stability factor. [5+5] OR 9.a) Determine the quiescent currents and the collector to emitter voltage for a Ge transistor with β = 50 in the self biasing arrangements. The circuit component values are VCC = 20V, RC = 2kΩ, Re = 0.1 kΩ, R1 = 100 kΩ and R2 = 5 kΩ. Find the stability factor S. b) Explain the terms Bias Stabilization and Bias Compensation. [5+5]
10.a) Derive the expression for the width of depletion region ‘W’ in the case of p-channel JFET. b) Explain the working of a depletion type MOSFET with a neat construction diagram and its characteristics. [5+5] OR 11. Draw the circuit of source follower Amplifier and derive the expressions for AI, AV, Ri and Ro. [10]
