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May - 2019

This document is a question paper for an exam on basic electrical and electronics engineering. It contains two parts: Part A has 10 short answer questions worth a total of 25 marks. Part B has 5 questions worth 10 marks each, with subquestions a and b, on various topics including circuit analysis, RLC circuits, diodes, transistors, FETs and regulators. Students must answer all of Part A and choose one full question from each of the 5 units in Part B.
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0% found this document useful (0 votes)
63 views2 pages

May - 2019

This document is a question paper for an exam on basic electrical and electronics engineering. It contains two parts: Part A has 10 short answer questions worth a total of 25 marks. Part B has 5 questions worth 10 marks each, with subquestions a and b, on various topics including circuit analysis, RLC circuits, diodes, transistors, FETs and regulators. Students must answer all of Part A and choose one full question from each of the 5 units in Part B.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Code No: 132AJ R16

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD


B.Tech I Year II Semester Examinations, May - 2019
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
JN
(Common to CE, ME, MCT, MMT, AE, MIE, PTM, CEE, MSNT)
Time: 3 hours Max. Marks: 75

Note: This question paper contains two parts A and B.


TU
Part A is compulsory which carries 25 marks. Answer all questions in Part A.
Part B consists of 5 Units. Answer any one full question from each unit. Each
question carries 10 marks and may have a, b, c as sub questions.
H
PART- A
(25 Marks)
1.a) State Kirchoff’s laws. [2]
U
b) Draw the wave forms for voltage, current of pure inductor when excited by a sinusoidal
voltage. [3]
c) State maximum power transfer theorem. [2]
SE
d) Derive the expression for resonant frequency of a RLC series circuit. [3]
e) Draw the V-I characteristic of a PN diode and show the shift with increase in
temperature. [2]
f) What is the purpose of using filters with rectifiers? [3]
D
g) Define hie and hre. [2]
h) What are the demerits of fixed bias method of a transistor? [3]
i) Explain principle of operation of SCR. [2]
26
j) Compare BJT and FET. [3]

PART-B
-0
(50 Marks)
2.a) Differentiate dependent and independent sources.
b) Find the power in 30Ω resistance using nodal analysis for the circuit shown in figure 1.
5-
[5+5]
20
19
Figure: 1
OR
n
3.a) A wire carries a current, which is a combination of a d.c current of 10A and a sinusoidal
current with a peak value of 10A. Determine RMS value of the resultant.
b) An impedance z1   6  j8  is connected in series with a parallel combination of
impedances z2  10  j 6  , z3  8  j10  and is connected to a 300V, 50Hz supply.
Find the total active power, reactive power and power factor of the circuit. [5+5]
4.a) A series RLC circuit with R = 100Ω, L = 0.6H and C = 45µF is applied a voltage of
10000V with variable frequency. Calculate resonant frequency, current at resonance,
voltage across R, L and C at resonance.
b) Derive the expression for half power frequencies of a RLC series resonant circuit. [5+5]
JN
OR
5.a) For the circuit shown in the figure 2 draw current locus diagram.
TU
H
U
Figure: 2
b) By using superposition theorem find the current in the 6Ω resistance of the following
SE
circuit shown in figure 3. [5+5]
D
26
Figure: 3

6.a) Define the terms dynamic resistance of a diode and ‘ Diffusion capacitance of a diode’.
-0
b) Explain how capacitor filter improves the performance of a full wave rectifier. [5+5]
OR
5-
7.a) Compare the characteristics of centre tapped transformer type and bridge type full wave
Rectifiers.
b) Draw the equivalent circuit and V-I characteristic of ideal and piecewise linear model of
20
a PN junction diode. [5+5]

8.a) Draw the simplified h-parameter equivalent circuit of BJT in CB configuration and derive
expressions for Av, Ai, Zi and Zo .
19
b) Explain how bias stabilization and compensation are done using diodes. [5+5]
OR
9.a) Explain voltage divider biasing method with relevant circuit diagrams and equations.
n
b) Compare CE, CB and CC characteristics of a BJT. [5+5]

10.a) Explain the construction and principle of operation of JFET.


b) Explain how zener diode acts as a voltage regulator. [5+5]
OR
11.a) Draw the energy band diagram of tunnel diode and explain tunneling phenomenon. Draw
its V-I characteristics.
b) Explain the working principle of varactor diode. [5+5]

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