Data Sheet: HEF40106B Gates
Data Sheet: HEF40106B Gates
Data Sheet: HEF40106B Gates
DATA SHEET
For a complete data sheet, please also download:
HEF40106B
gates
Hex inverting Schmitt trigger
Product specification January 1995
File under Integrated Circuits, IC04
Philips Semiconductors Product specification
HEF40106B
Hex inverting Schmitt trigger
gates
DESCRIPTION
Each circuit of the HEF40106B functions as an inverter
with Schmitt-trigger action. The Schmitt-trigger switches at
different points for the positive and negative-going input
signals. The difference between the positive-going voltage
(VP) and the negative-going voltage (VN) is defined as
hysteresis voltage (VH).
This device may be used for enhanced noise immunity or
to “square up” slowly changing waveforms.
January 1995 2
Philips Semiconductors Product specification
HEF40106B
Hex inverting Schmitt trigger
gates
DC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C
VDD
SYMBOL MIN. TYP. MAX.
V
Hysteresis 5 0,5 0,8 V
voltage 10 VH 0,7 1,3 V
15 0,9 1,8 V
Switching levels 5 2 3,0 3,5 V
positive-going 10 VP 3,7 5,8 7 V
input voltage 15 4,9 8,3 11 V
negative-going 5 1,5 2,2 3 V
input voltage 10 VN 3 4,5 6,3 V
15 4 6,5 10,1 V
January 1995 3
Philips Semiconductors Product specification
HEF40106B
Hex inverting Schmitt trigger
gates
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
TYPICAL FORMULA FOR P (µW)
V
Dynamic power 5 2 300 fi + ∑ (foCL) × VDD2 where
dissipation per 10 9 000 fi + ∑ (foCL) × VDD 2 fi = input freq. (MHz)
package (P) 15 20 000 fi + ∑ (foCL) × VDD 2 fo = output freq. (MHz)
CL = load capacitance (pF)
∑ (foCL) = sum of outputs
VDD = supply voltage (V)
January 1995 4
Philips Semiconductors Product specification
HEF40106B
Hex inverting Schmitt trigger
gates
Fig.6 Typical drain current as a function of input Fig.7 Typical drain current as a function of input
voltage; VDD = 5 V; Tamb = 25 °C. voltage; VDD =10 V; Tamb = 25 °C.
January 1995 5
Philips Semiconductors Product specification
HEF40106B
Hex inverting Schmitt trigger
gates
Fig.9 Typical switching levels as a function of supply voltage VDD; Tamb = 25 °C.
If a Schmitt trigger is driven via a high impedance (R > 1 kΩ) then it is necessary to incorporate a capacitor C of such
C V DD – V SS
value that: ------- > --------------------------- , otherwise oscillation can occur on the edges of a pulse.
Cp VH
Cp is the external parasitic capacitance between input and output; the value depends on the circuit board layout.
January 1995 6
Philips Semiconductors Product specification
HEF40106B
Hex inverting Schmitt trigger
gates
APPLICATION INFORMATION
Some examples of applications for the HEF40106B are:
• Wave and pulse shapers
• Astable multivibrators
• Monostable multivibrators.
January 1995 7
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