LEP

Hall effect in p-germanium with Cobra3 5.3.01

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Related topics
Semiconductor, band theory, forbidden zone, intrinsic conductivity, extrinsic conductivity, valence band,
conduction band, Lorentz force, magnetic resistance, mobility, conductivity, band spacing, Hall coeffi-
cient.
Principle
The resistivity and Hall voltage of a rectangular germanium sample are measured as a function of tem-
perature and magnetic field. The band spacing, the specific conductivity, the type of charge carrier and
the mobility of the charge carriers are determined from the measurements.
Equipment
1 Hall effect module, 11801-00
1 Hall effect, p-Ge, carrier board 11805-01
2 Coil, 600 turns 06514-01
1 Iron core, U-shaped, laminated 06501-00
1 Pole pieces, plane, 30x30x48 mm, 2 06489-00
1 Hall probe, tangent., prot. cap 13610-02
1 Power supply 0-12 V DC/6 V, 12 V AC 13505-93
1 Tripod base -PASS- 02002-55
1 Support rod -PASS-, square, l = 250 mm 02025-55
1 Right angle clamp -PASS- 02040-55
2 Connecting cord, l = 500 mm, red 07361-01
1 Connecting cord, l = 500 mm, blue 07361-04
2 Connecting cord, l = 750 mm, black 07362-05
1 Cobra3 Basic-Unit 12150-00
1 Power supply, 12 V 12151-99
1 Tesla measuring module 12109-00
1 Cobra3 Software Hall 14521-61
2 RS 232 data cable 14602-00
1 TESS Expert CD-ROM Laboratory 16502-42

PC, Windows 95 or higher

Fig. 1: Experimental set-up.

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5.3.01 Hall effect in p--germanium with Cobra3
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Tasks
1. The Hall voltage is measured at room Fig. 2: Hall effect in sample of rectangular section. The polarity
polari
sign of the Hall voltage shown applies when the carriers
temperature and constant magnetic field as a
are negatively charged.
function of the control current
urrent and plotted on
a graph (measurement without compensa-
compens
tion for defect voltage).
2. The voltage across the sample is measured
at room temperature and constant control
current as a function of the magnetic induc-
indu
tion B.
3. The voltage across the sample is measured
at constant control ol current as a function of
the temperature. The band spacing of ger-
manium is calculated from the measure-measur
ments.
4. The Hall voltage UH is measured as a func- fun
tion of the magnetic induction B, at room temperature.
The sign of the charge carriers and the Hall constant RH together with the Hall mobility H and
the carrier concentration p are calculated from the measurements.
5. The Hall voltage UH is measured as a function of temperature at constant magnetic induction B and
the values are plotted on a graph.
Set-up and procedure
The experimental set-up up is shown in Fig.1. The Fig. 3: Start menu of the software Cobra3 Hall effect.
test piece on the board has to be put into the
Hall-Effect-modul via the guide-groove.
groove. The
module is directly connected with the 12 V~
output of the power unit over the ac--input on
the back-side of the module.
The connection to the Analog In 2 port of the
Cobra3 Basic-Unit
Unit is realized via a RS232 ca-
c
ble from the RS232-portport of the module.
The Tesla-module
module is connected to the module-
module
port of the Interface.
The plate has to be brought up to the magnet
very carefully, so as not to damage the crystal
in particular, avoid bending the plate. It has to
be in the centre between the pole pieces. The
different measurements are controlled by the
software. The magnetic field has to be meas-mea
ured with a hall probe, which can be directly put into the groove in the module as shown in Fig.1. So you
can be sure that the magnetic flux is measured
mea directly on the Ge-sample.

To perform the measurements, start the software and choose as gauge the Cobra3 Hall-Effect.
Hall
You will receive the following window (Fig.3):

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Hall effect in p-germanium with Cobra3 5.3.01
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This is the start-screen which appears before Fig. 4: Example of measurement parameters.
every measurement. Here, you can choose, which
parameters have to be measured, displayed, etc.,
e.g. Hall voltage as a function of Sample current
(Fig.4)

You can also calibrate the Tesla-module via op-

tions (Fig.5). Start the measurement-screen by
pressing the continue-button.

1. Choose The Hall voltage as the measurement-

channel and the Sample current as x-axis.
Choose the measurement on key press.
Continue. Set the magnetic field to a value of
250 mT by changing the voltage and current on
the power supply. Determine the hall voltage as Fig. 5: Calibration menu.
a function of the current from -30 mA up to 30
mA in steps of nearly 5 mA.
You will receive a typical measurement like in
Fig.6.

2. Choose The Sample voltage as the

measurement-channel and the Flux density as
x-axis. Choose the measurement on key
press. Continue.
Set the control current to 30 mA. Determine Fig. 6: Hall voltage as a function of current.
the sample voltage as a function of the mag-
netic induction B. Start with -300 mT by chang-
ing the polarity of the coil-current and increase
the magnetic induction in steps of nearly 20
mT. At zero point, you have to change the po-
larity to receive a positive magnetic induction,
as the current and voltage are only positive.
You will get a typical graph as shown in Fig.7.

3. Choose The Sample voltage as the measure-

ment-channel and the sample temperature
as x-axis. Choose the measurement every Fig. 7: Change of resistance as a function of magnetic
1 s. Continue.
induction.
Set the current to a value of 30 mA. The
magnetic field is off. The current remains
nearly constant during the measurement,
but the voltage changes according to a
change in temperature. Start the measure-
ment by activating the heating coil with the
on/off-knob on the backside of the module
and start the measurement in the software.
Determine the change in voltage dependent
on the change in temperature for a

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5.3.01 Hall effect in p--germanium with Cobra3
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temperature range of room temperatureture to a max-

ma Fig. 8: Reciprocal sample voltage plotted as a function of
imum of 170C. The module automatically con- reciprocal absolute
lute temperature. (Since I was con-
co
1
trols and stops the heating. You will receive a typ-
ty stant during the measurement, U ~ s and the
ical curve as shown in Fig.8. graph is therefore equivalent to a plot of conductivi-
conductiv
ty against reciprocal temperature).

4. Choose The Hall voltage as the measurement-

measurement
channel and the Flux density as x-axis.
axis.
Choose the measurement on key key press.
Continue.
Set the current to a value of 30 mA. Determine
the Hall voltage as a function of the magnetic
induction. Start with -300
300 mT by changing the
polarity of the coil-current
current and increase the
magnetic induction in steps of nearly 20 mT. At
zero point, you have to o change the polarity. A
typical measurement is shown in Fig.9.

5. Choose The Hall voltage as the measurement-

measurement
channel and the sample temperature as x-axis.
x
Choose the measurement every every 1 s. Contin-
Conti
ue.
Set the current to 30 mA and the magnetic in- i
duction to 300 mT.
Determine the Hall voltage as a function of the
temperature. Fig. 9: Hall voltage as a function of magnetic induction.
Start the measurement by activatingting the heating
coil with the on/off-knob
knob on the backside of the
module and starting the software.
After a channel modification (compare evalua-
evalu
tion) you will receive a curve like Fig.10.

Theory and evaluation

If a current I flows through a conducting strip of

rectangular
tangular section and if the strip is traversed by
a magnetic field at right angles to the direction of the current, a voltage the so--called Hall voltage is pro-
duced between two superposed points on opposite sides of the strip.
This phenomenon arises from the Lorentz force: the charge carriers giving rise to the current flowing through
the sample are deflected in the magnetic field B as a function of their sign and their velocity v:

(F = force acting on charge carriers, e = elementary charge).

Since negative and positive charge carriers in semiconductors move in opposite directions, they are deflected
in the same direction.

The type of charge carrier causing the flow of current can therefore be determined from the polarity of the Hall
voltage, knowing the direction of the current and that of the magnetic field.

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Hall effect in p-germanium with Cobra3 5.3.01
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1. Fig. 6 shows that there is a linear relationship between the current I and the Hall voltage UB:

where = proportionality factor.

2. The change in resistance of the sample due to the magnetic field is associated with a reduction in
the mean free path of the charge carriers. Fig. 7 shows the non-linear, clearly quadratic, change in
resistance as the field strength in-creases. Therefore use the channel modification in the analysis-
menu.

3. In the region of intrinsic conductivity, we have

where = conductivity, Eg = energy of bandgap, k = Boltzmann constant, T = absolute temperature.

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If the logarithm of the conductivity is plotted against T a straight line is obtained with a slope

from which Eg can be determined.

From the measured values used in Fig. 8, the slope of the regression line

is

with a standard deviation sb = 0.07 103 K.

3. To receive the necessary graph, do as follows:
Choose the channel modification in the analysis-menu. Set the parameters as shown in Fig.11. Con-
tinue. Remember the procedure with the parameters in Fig.12. Now, you have the desired graph. To
determine the regression line, choose the Regression-icon.
(Since the measurements were made with a constant current, we can put s ~ U1, where U is the
voltage across the sample.)
Since

we get

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5.3.01 Hall effect in p--germanium with Cobra3
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Fig. 11: Parameters for the first channel modification. Fig. 12: Parameters for the second channel modification.

4. With the directions of control current and magnetic field shown in Fig. 2, the charge carriers giving rise
to the current in the sample are deflected towards the front edge of the sample. Therefore, if (in an n-n
doped probe) electrons are the predominant charge carriers, the front edge will become negative,
and, with hole conduction in a p-doped
doped sample, positive.
carrier concentration p are related
The conductivity s0, the charge carrier mobility H, and the charge-carrier
through the Hall constant RH:

Fig. 9 shows a linear connection between Hall voltage and B field.. With the values used in Fig. 9, the
regression line with the formula

has a slope b = 0.125 VT1, with a standard deviation sb 0.003 VT1.

The Hall constant RH thus becomes, according to

where the sample thickness d = 1103m and I = 0.030 A,

with the standard deviation

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Hall effect in p-germanium with Cobra3 5.3.01
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The conductivity at room temperature is calculated

from the sample length l, the sample cross-section
A and the sample resistance R0 (cf. 2) as follows:

With the measured values

Fig. 10: Hall voltage as a function of temperature.

we have

0 = 57.14 1 m1.

The Hall mobility H of the charge carriers can now be determined from

Using the measurements given above, we get:

The hole concentration p of p-doped samples is calculated from

Using the value of the elementary charge

e = 1.602 1019 As
we obtain
p = 14.9 1020 m3.

5. Fig. 10 shows first a decrease in Hall voltage with rising temperature. Since the measurements were
made with constant current, it is to be assumed that this is attributable to an increase in the number of
charge carriers (transition from extrinsic conduction to intrinsic conduction) and the associated reduction
in drift velocity .
(Equal currents with increased numbers of charge carriers imply reduced drift velocity). The drift velocity
in its turn is connected with the Hall voltage through the Lorentz force.
The current in the crystal is made up of both electron currents and hole currents

Since in the intrinsic velocity range the concentrations of holes p and of electrons n are approximately
equal, those charge carriers will in the end make the greater contribution to the Hall effect which have
the greater velocity or (since = m+E) the greater mobility.
Fig. 10 shows accordingly the reversal of sign of the Hall voltage, typical of p-type materials, above a
particular temperature.

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5.3.01 Hall effect in p--germanium with Cobra3
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