Plastic case TO-92 Kunststoffgehuse (10D3) Weight approx. Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert
Standard Pinning Standard packaging taped in ammo pack
1=C 2=B 3=E Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BC 546 BC 547 BC 548/549 Collector-Emitter-voltage B open VCE0 65 V 45 V 30 V Collector-Emitter-voltage B shorted VCES 85 V 50 V 30 V Collector-Base-voltage E open VCB0 80 V 50 V 30 V Emitter-Base-voltage C open VEB0 6V 6V 5V 1 Power dissipation Verlustleistung Ptot 500 mW ) Collector current Kollektorstrom (DC) IC 100 mA Peak Coll. current Kollektor-Spitzenstrom ICM 200 mA Peak Base current Basis-Spitzenstrom IBM 200 mA Peak Emitter current Emitter-Spitzenstrom - IEM 200 mA Junction temp. Sperrschichttemperatur Tj 150/C Storage temperature Lagerungstemperatur TS - 65+ 150/C
Characteristics, Tj = 25/C Kennwerte, Tj = 25/C
Group A Group B Group C DC current gain Kollektor-Basis-Stromverhltnis VCE = 5 V, IC = 10 :A hFE typ. 90 typ. 150 typ. 270 VCE = 5 V, IC = 2 mA hFE 110...220 200...450 420...800 VCE = 5 V, IC = 100 mA hFE typ. 120 typ. 200 typ.400 h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz Small signal current gain Stromverst. hfe typ. 220 typ. 330 typ. 600 Input impedance Eingangsimpedanz hie 1.6...4.5 kS 3.2...8.5 kS 6...15 kS Output admittance Ausgangsleitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S Reverse voltage transfer ratio hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4 Spannungsrckwirkung
1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden 6 01.11.2003 General Purpose Transistors BC 546 ... BC 549
Characteristics, Tj = 25/C Kennwerte, Tj = 25/C
Min. Typ. Max. Collector saturation voltage Kollektor-Sttigungsspannung IC = 10 mA, IB = 0.5 mA VCEsat 80 mV 200 mV IC = 100 mA, IB = 5 mA VCEsat 200 mV 600 mV Base saturation voltage Basis-Sttigungsspannung IC = 10 mA, IB = 0.5 mA VBEsat 700 mV IC = 100 mA, IB = 5 mA VBEsat 900 mV Base-Emitter voltage Basis-Emitter-Spannung VCE = 5 V, IC = 2 mA VBE 580 mV 660 mV 700 mV VCE = 5 V, IC = 10 mA VBE 720 mV Collector-Emitter cutoff current Kollektorreststrom VCE = 80 V BC 546 ICES 0.2 nA 15 nA VCE = 50 V BC 547 ICES 0.2 nA 15 nA VCE = 30 V BC 548 ICES 0.2 nA 15 nA VCE = 30 V BC 549 ICES 0.2 nA 15 nA Collector-Emitter cutoff current Kollektorreststrom VCE = 80 V, Tj = 125/C BC 546 ICES 4 :A VCE = 50 V, Tj = 125/C BC 547 ICES 4 :A VCE = 30 V, Tj = 125/C BC 548 ICES 4 :A VCE = 30 V, Tj = 125/C BC 549 ICES 4 :A Gain-Bandwidth Product Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz fT 300 MHz Collector-Base Capacitance Kollektor-Basis-Kapazitt VCB = 10 V, f = 1 MHz CCB0 3.5 pF 6 pF Emitter-Base Capacitance Emitter-Basis-Kapazitt VEB = 0.5 V, f = 1 MHz CEB0 9 pF Noise figure Rauschma VCE = 5 V, IC = 200 :A BC 547 F 2 dB 10 dB RG = 2 kS f = 1 kHz, BC 548 F 1.2 dB 4 dB ) f = 200 Hz BC 549 F 1.2 dB 4 dB Thermal resistance junction to ambient air RthA 250 K/W 1) Wrmewiderstand Sperrschicht umgebende Luft Recommended complementary PNP transistors BC 556 ... BC 559 Empfohlene komplementre PNP-Transistoren
Available current gain groups per type BC 546A BC 546B
Lieferbare Stromverstrkungsgruppen pro Typ BC 547A BC 547B BC 547C BC 548A BC 548B BC 548C BC 549B BC 549C
1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden 01.11.2003 7 This datasheet has been downloaded from:
