IntelliSuite Tutorial PDF
IntelliSuite Tutorial PDF
IntelliSuite Tutorial PDF
Lecture 2
IntelliSuite Tutorial
Overview
http://www.intellisensesoftware.com
Wafer
3-D Model
Load Meshing
3-D Model
Boundary Analysis
Condition Options
Behavior
Pattern
IntelliSuite Overview
IntelliFab
IntelliMask
Mematerial
3-D Builder
Thermoelectromechanical Analysis
Microfluidics and BioMEMS
AnisE (Anisotropic Etch Simulation)
Technical Reference
IntelliFab
File
Process
Database
Construct
Simulation
3-D Visualization
Construct
Visualize
Scale
Sequence once
Cross-section
Database
Process Steps
Bonding
Definition
Deposition
Doping
Electroplating
Etch
Sacrifice
Laser Ablation
(Ablation is the
process of
removing material
by vaporization or
disintegration.
IntelliMask
Single Mask
Multilayer Mask
Convert (DXF, GDSII)
The IntelliSuite GDSII file converter provides several options.
Users can convert all cells, or just selected cells, of a multi-cell
multi-level *.gds file into multi-layer *.msk files. A multi-layer
*.msk file will be generated for each selected cell, and also for
each sub cell of the selected cell
IntelliMask Features
Manhattan geometry
Non-Manhattan Geometry
Cartesian Co-ordinate
Polar Coordinate
Switch layers
Keyboard Entry
Mematerial
Mematerial
Parameter Graphs
Mematerial
Window
Single Parameter
of interest
Parameter
Window Two parameter of
interest
3D Builder
Elements Construction
Mesh Refinement
ThermoelectricalMechanical Module
Analysis Option
Stress/Displacement
Heat Transfer
Heat Transfer / Thermal Stress
Thermal Electrical
Thermal Electrical / Thermal Stress
ThermoElectroMechanical Relaxation
Electrostatic
Electrostatic Force vs. Displacement
Relaxation Method
Domain 1
f1( x1( i 1 ) , x2( i ) ,....., xm( i ) ) 0
Domain 2
f 2 ( x1( i 1 ) , x2( i 1 ) ,....., xm( i 1 ) ) 0
Domain m
f m ( x1( i 1 ) , x2( i 1 ) ,....., xm( i 1 ) ) 0
i=i+1
No Yes
Converged
Static Stress
Heat Transfer / Thermal Stress
ThermoElectroMechanical Relaxation
Loads
Boundary
Fixed
YZ Fixed
XY fixed
XZ fixed
X fixed
Y Fixed
Z Fixed
Free
Attach spring, etc.
0 V DC 1 Pascal
Fixed Boundary
Fixed Boundary 12 V DC
Mesh
Automesh
User Defined mesh
Mechanical mesh
Electrical mesh
Result
Displacement
Deformed shape
Stress components Node value
Stress invariants Node curve
Potential 2-d plot- Mechanical
Electrical field 2-D plot-
Current density Electromechanical
Capacitance
Charge density
Pressure
Natural frequency
Mode animation
Macromodel
Click
Construction
Layout
Die size
Click
Construction
Show Palette
Step 1
Substrate Definition
Click
Definition
Geometry
Si
Czochralski
Change parameters
as necessary
Click
Add process
Add process
The OpSet window
disappears, and first
step is entered into
the Process Table.
The Process
Construction Palette
remains on the
screen
OpSet Window
06-88-435 Microelectromechanical Systems (MEMS) Summer 2011
RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR
Click
Etch
Element
Si
Clean
Click
Process
Piranha
Add Process
Add Process
Step 3
Silicon Dioxide Deposition
Click
Process
Deposition
Construction
Compounds Palette
SiO2
Thermal
Step 4
Silicon Nitride Deposition
Click
Deposition
Compounds
Si3N4
PECVD
t_film (enter 1000)
Add Process
Add Process
Step 5
Cleaning After Plasma Deposition
Click
Etch RCA: A solution of
Element NH4OH:H2O2:H2O
Si
Clean
Process
RCA
Add Process
Add Process
Step 6
Polysilicon Layer Deposition
Click
Deposition
Compounds
PolySi
LPCVD
t_film (enter 2000)
Add Process
Add Process
Step 7
Aluminum Contact Deposition
Click
Deposit
Element
Al
Sputter
Process
Ar-Ambient
Add Process
Add Process
Step 8
Photoresist Deposition
Click
Deposition
Polymers
PR-S1800
Spin
Add Process
Add Process
Step 9
First Mask Definition
Click
Definition
Mask
UV
Contact
Mask Number (enter 1)
Process
Suss
Add Process
Add Process
Mask No.
(Must be a
unique
numerical
value)
Click
Layout
twice to
invoke
the
Mask
Editor
Step 10
Photoresist Pattern
Click
Etch
Polymers
PR-S1800
Wet
Process: 1112A (solvent)
t_etch (enter 990000)
Add Process
Add Process
Step 11
Aluminum Etch
Click
Etch
Element
Al
Wet
Process
PAN
t_etch (enter 990000)
Add process
Add process
Step 12
Photoresist Strip
Click
Etch
Polymers
PR-S1800
Wet
Process: 1165 (solvent)
t_etch (enter 990000)
Add Process
Add Process
Step 13
2nd Photoresist Deposition
Click
Deposition
Polymers
PR-S1800
Spin
Add Process
Add Process
Step14
2nd Mask Definition
Click
Definition
Mask
UV
Contact
Mask Number (enter 2)
Process
Suss
Add Process
Add Process
Step 15
Photoresist Etch
Click
Etch
Polymers
PR-S1800
Wet
Process: 1112A (solvent)
t_etch (enter 990000)
Add Process
Add Process
Step 16
Polysilicon Plasma Etch
Click
Etch
Compound
Poly Si
Dry
Process
SF6-Plasma
T_etch (enter 990000)
Add Process
Add Process
Step 17
Photoresist Strip
Click
Etch
Polymers
PR-S1800
Wet
Process: 1165 (solvent)
t_etch (enter 990000)
Add Process
Add Process
Step 18
Nitride Etch
Click
Etch
Compound
Si3N4
Wet
Process
Sacrifice
t_etch (enter 1e6)
Add Process
Add Process
Phosphoric acid
(70% concentrated)
Step 19
Silicon Dioxide Etch
Click
Etch
Compound
SiO2
Wet
Process: BOE(solvent)
t_etch (enter 990000)
Add Process
Add Process
Step 20
Substrate Sacrificial Etch
Click
Etch
Element
Si
Wet
Process
Sacrifice
t_etch (enter 1e6)
Add Process
Add Process
Resonant peak
for first
vibrational
mode