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III V MOSFETs

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Recent papers in III V MOSFETs
An Improved Performance Ring Oscillator Design
This paper presents a new technique to improve frequency performance of CMOS ring oscillator. It is based on the addition of MOS transistor to boost switching speed of the oscillator delay cell. The method can be used for simple and... more
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      Digital Electronics Design, Analog and Digital Electronics, VLSI, Current Mirror, III V MOSFETs, VCO
Ion beam oxidation of GaAs: The role of ion energy
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      Electrical Engineering, Electronic Engineering, Microelectronics And Semiconductor Engineering, Materials Engineering
ANALYTICAL AND NUMERICAL MODELING OF V TH AND S FOR NEW CG MOSFET STRUCTURE
In this work, we study analytical model such threshold voltage (V TH) and Subthreshold swing (SS) for a new Surrounding Gate MOSFET. This new SG-MOSFET is composed of Dual-metal Gate (DMG) M 1 and M 2 with different work function, Graded... more
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      MOSFET, MOSFET compact modeling, RF MOSFET Compact Modeling, HV-MOSFET compact modeling
Structure and interface bonding of GeO2/Ge/In0.15Ga0.85As heterostructures
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      III-V Semiconductors, Semiconductors, Semiconductor Devices, III V MOSFETs
III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications
III--V junctionless gate-all-around (GAA) nanowire MOSFETs (NWFETs) are experimentally demonstrated for the first time. Source/drain resistance and thermal budget are minimized by regrowth using metalorganic chemical vapor deposition... more
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      III V MOSFETs, Linearity
Ion beam oxidation of GaAs: The role of ion energy
... at 300 K. The total power input from the ion beam was at all times well below the limit for ion beam heat-ing-From the present description of ÍBO, it can be seen that the main interest of IBO is to allow oxidation at very low 1036... more
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      Engineering, Electrical Engineering, Electronic Engineering, Microelectronics And Semiconductor Engineering