Catalog

Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object. The operating wavelength is 950 mm. The detector consists of a phototransistor. Applications D Position sensor for shaft encoder D Detection of reflective material such as paper, IBM cards, magnetic tapes etc. D Limit switch for mechanical motions in VCR D General purpose – wherever the space is limited Features D Snap-in construction for PCB mounting D Package height: 7 mm D Plastic polycarbonate housing construction which prevents crosstalk D L = long leads D Current Transfer Ratio (CTR) of typical 10%

DESCRIPTION The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low Ciss: Ciss = 1300 pF TYP. • 5 V drive available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 25 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±48 A

The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Current Transfer Ratio — 100% Minimum @ Specified Conditions • Guaranteed Switching Speeds • Meets or Exceeds all JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix " V " must be included at end of part number. VDE 0884 is a test option.

Backup software information is a potential source for data mining: not only the unstructured stored data from all other backed-up servers, but also backup jobs metadata, which is stored in a formerly known catalog database. Data mining this database, in special, could be used in order to improve backup quality, automation, reliability, predict bottlenecks, identify risks, failure trends, and provide specific needed report information that could not be fetched from closed format property stock property backup software database. Ignoring this data mining project might be costly, with lots of unnecessary human intervention, uncoordinated work and pitfalls, such as having backup service disruption, because of insufficient planning. The specific goal of this practical paper is using Knowledge Discovery in Database Time Series, Stochastic Models and R scripts in order to predict backup storage data growth. This project could not be done with traditional closed format proprietary solutions, since it is generally impossible to read their database data from third party software because of vendor lock-in deliberate overshadow. Nevertheless, it is very feasible with Bacula: the current third most popular backup software worldwide, and open source. This paper is focused on the backup storage demand prediction problem, using the most popular prediction algorithms. Among them, Holt-Winters Model had the highest success rate for the tested data sets.

The CD4047B-Series types are supplied in 14-lead hermetic dual-in-line ceramic packages (F3A suffix), 14-lead dual-in-line plastic packages (E suffix), 14-lead small-outline packages (M, MT, M96, and NSR suffixes), and 14-lead thin shrink small-outline packages (PW and PWR suffixes).

Series description This series of fixed negative-voltage integrated-circuit voltage regulators is designed for a wide range of applications. These include on-card regulation for elimination of noise and distribution problems associated with single-point regulation. In addition, they can be used to control series pass elements to make high-current voltage-regulator circuits. One of these regulators can deliver up to 100 mA of output current. The internal current-limiting and thermal-shutdown features make them essentially immune to overload. When used as a replacement for a zener-diode and resistor combination, these devices can provide ef current. TO–92 electrical characteristics at specified virtual junction temperature, V I = 10 V, I = 40 mA (unless otherwise noted)

DESCRIPTION The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A) • Avalanche capability ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)