DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A PINNING FEATURES • High current (max. 800 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • Linear amplification and switching. DESCRIPTION 3 handbook, halfpage 1 2 NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. 2 3 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS 60 V − 75 V 2N2222 − 30 V 2N2222A − 40 V − 800 mA Tamb ≤ 25 °C − 500 mW 75 − 250 − MHz 300 − MHz − 250 ns collector-emitter voltage IC collector current (DC) Ptot total power dissipation open base hFE DC current gain IC = 10 mA; VCE = 10 V fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 2N2222 2N2222A turn-off time 1997 May 29 UNIT − 2N2222A toff MAX. open emitter 2N2222 VCEO MIN. ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA 2 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter 2N2222 − 60 V 2N2222A − 75 V 2N2222 − 30 V 2N2222A − 40 V 2N2222 − 5 V 2N2222A − 6 V collector-emitter voltage emitter-base voltage open base open collector IC collector current (DC) − 800 mA ICM peak collector current − 800 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 500 mW Tcase ≤ 25 °C − 1.2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rth j-c thermal resistance from junction to case 1997 May 29 CONDITIONS in free air 3 VALUE UNIT 350 K/W 146 K/W Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER IEBO emitter cut-off current hFE DC current gain VCEsat − 10 nA IE = 0; VCB = 50 V; Tamb = 150 °C − 10 µA IE = 0; VCB = 60 V − 10 nA IE = 0; VCB = 60 V; Tamb = 150 °C − 10 µA IC = 0; VEB = 3 V − 10 nA IC = 0.1 mA; VCE = 10 V 35 − IC = 1 mA; VCE = 10 V 50 − IC = 10 mA; VCE = 10 V 75 − IC = 150 mA; VCE = 1 V; note 1 50 − IC = 150 mA; VCE = 10 V; note 1 100 300 35 − 2N2222 30 − 2N2222A 40 − IC = 150 mA; IB = 15 mA; note 1 − 400 mV IC = 500 mA; IB = 50 mA; note 1 − 1.6 V IC = 150 mA; IB = 15 mA; note 1 − 300 mV IC = 500 mA; IB = 50 mA; note 1 − 1 V IC = 150 mA; IB = 15 mA; note 1 − 1.3 V IC = 500 mA; IB = 50 mA; note 1 − 2.6 V IC = 150 mA; IB = 15 mA; note 1 0.6 1.2 V IC = 500 mA; IB = 50 mA; note 1 − 2 V − 8 pF − 25 pF DC current gain DC current gain IC = 10 mA; VCE = 10 V; Tamb = −55 °C collector-emitter saturation voltage 2N2222A VBEsat base-emitter saturation voltage 2N2222 VBEsat IC = 500 mA; VCE = 10 V; note 1 collector-emitter saturation voltage 2N2222 VCEsat base-emitter saturation voltage 2N2222A Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz 2N2222A fT F UNIT IE = 0; VCB = 50 V 2N2222A hFE MAX. collector cut-off current 2N2222A hFE MIN. collector cut-off current 2N2222 ICBO CONDITIONS transition frequency 2N2222 250 − MHz 2N2222A 300 − MHz − 4 dB noise figure 2N2222A 1997 May 29 IC = 20 mA; VCE = 20 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 4 Philips Semiconductors Product specification NPN switching transistors SYMBOL 2N2222; 2N2222A PARAMETER CONDITIONS MIN. MAX. UNIT Switching times (between 10% and 90% levels); see Fig.2 ton turn-on time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 35 ns td delay time − 10 ns tr rise time − 25 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VCC VBB ndbook, full pagewidth RB RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1997 May 29 5 oscilloscope Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT18/13 α j seating plane B w M A M B M 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A a b D D1 j k L w α mm 5.31 4.74 2.54 0.47 0.41 5.45 5.30 4.70 4.55 1.03 0.94 1.1 0.9 15.0 12.7 0.40 45° REFERENCES OUTLINE VERSION IEC JEDEC SOT18/13 B11/C7 type 3 TO-18 1997 May 29 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 6 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 May 29 Document order number: 9397 750 02161