Analysis of electromyogram (EMG) signal processing and its application to identify human muscle s... more Analysis of electromyogram (EMG) signal processing and its application to identify human muscle strength of rehabilitation purpose has been successfully carried out in this paper. Single channel EMG signal was obtained from human muscle using non-invasive electrodes and further process by signal acquisition circuit to get a suitable signal to be process. In the first part of signal acquisition, the amplification circuit for the small EMG signal has been design successfully. After amplification stage EMG signal was digitized through analogue and digital converter (ADC) then further process in microcontroller (ATmega328) for getting accurate EMG signal. Finally, the processed EMG signal was classified into 6 different levels in order to display the muscle strength level of the user. This EMG device can be used to help the weak person or an elderly to identity their strength level of muscle for clinical rehabilitation purpose.
This paper venture into prospective ideas of finding viable solution of nanoelectronics device de... more This paper venture into prospective ideas of finding viable solution of nanoelectronics device design by an assessment of incorporating vertical impact-ionization MOSFET (IMOS) with strained SiGe technology into a formation of an emerging device structure with elevated performance and reliable outcomes for future bio-based sensor application. Impact Ionization FET biosensors can be extremely promising for applications where ultra-high sensitivity and fast response is
desirable. An ultra-low power with low Subthreshold Swing and
high breakdown voltage are imperative for ultra-sensitive biosensor. Impact ionization MOSFET (IMOS) is expected to
have a subthreshold swing (S) down to 20 mV/dec which is much lower compared to Conventional MOSFET (CMOS). This will eventually enhanced the switching behavior of the transistor and enhancing its electrical performance and response time particularly when scaled down into nanometre regime. However, vertical IMOS experience parasitic bipolar transistors (PBT) effect and low breakdown voltage. Parasitic Bipolar Transistor effect is a phenomenon where the MOSFET act as a minority carrier device like BJT instead of majority carrier device. This is not favorable for any power device or sensor. Dielectric Pocket (DP) is believed to be able to minimize the PBT effect while improving the performance of the device. Eventually, this device will prolong the increase density of transistor in a chip for future application of biosensor nanoelectronics.
The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (V... more The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOSDP) has been successfully developed and analyzed in this paper. There are significant drop in subthreshold slope (S) while threshold voltage is increase as the body doping concentration increases. It is notable that for body doping concentration above 1020, the S values keep increasing which is not recommended as the switching speed getting higher distracting performance of the device. An improved stability of threshold voltage, VTH was found for VESIMOS-DP device of various DP size ranging from 20nm to 80nm. The stability is due to the reducing charge sharing effects between source and drain region. In addition, the output characteristic was also highlighted a very good drain current at different gate voltage with the increasing of drain voltage for VESIMOS-DP with high body doping concentration. VESIMOSDP with low body doping concentration suffers PBT effect that prevents the device from being able to switch off. Hence, high body doping concentrations are imperative for obtaining better device characteristics and ensure the device works in II mode.
The Vertical Strained SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) ... more The Vertical Strained SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. The effect of doping concentration for both Source and Drain (S/D) as well as body doping concentration to the performance of VESIMOS-DP in terms of subthreshold slope (S), threshold voltage (VTH) and drain current has been observed in this paper. An inverse proportional of S and VTH value was found when S/D doping concentration increased. It is notable that for S/D doping concentration above 1019 atoms/cm3, there is a significant increase in S values which is not recommended as the switching speed getting higher distracting performance of the device. However, too low S/D doping concentration is not essential as it didn’t show any significant improvement on the performance of the device. It is also revealed that with low body doping concentration, the device suffers tremendous Parasitic Bipolar Transistor (PBT) effect that prevents the device from switched off. Thus, optimum doping concentration is imperative to obtain superb device characteristic. Due to the DP layer, a stable VTH =1.35V obtained due to the vicinity of DP layer near the drain end has reduced charge sharing between the source and drain. The slight different and consistency of VESIMOS-DP subthreshold value (S = 19 mV/dec) has given advantages for incorporating DP layer near the drain end. In many aspects, it is revealed that the incorporation of DP has enhanced the electrical performance and suppressed PBT effect of IMOS in the nanometer regime for future development of nanoelectronic device.
The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ion... more The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this paper. It is found that the drain current for single (SC) and dual channel (DC) VESIMOS were increased sharply initially due to the presence of Germanium. Germanium has high impact ionization rates to ensure that the transition from OFF state to ON state is abrupt. However, breakdown voltage of the SC device was decreased from BV=2.9V to 2.5V by increasing the composition of Ge from 10% to 30%. The same characteristics were found for DC VESIMOS where BV= 2V had decreased to 1.6V by varying the Ge composition. In short, the breakdown voltage which affected by the appearance of the second SiGe channel and Ge composition was justified. Apart from that, with the presence of the second SiGe channel, the switching speed and ION/IOFF of the device were improved. It was found that the sub-threshold slope of SC and DC VESIMOS were inversely proportional to the breakdown voltage.
Myogram on and off controller is important for improving or assist weak or the elderly people. On... more Myogram on and off controller is important for improving or assist weak or the elderly people. One of the most important aspects of the controller development is to determine the on and off time with respect to the body movement. In this project, high accuracy signal filtering, high gain amplifier, signal converter, microcontroller and electrodes are used for circuit simulation and development to obtain muscle signal (Electromyogram). A good quality amplifier is used in the circuit to achieve high accuracy performance of the process. Safety precaution is important in biomedical equipment to avoid accident to the user. In order to prevent accident, an isolating circuit has been included in this project to protect the user. To ensure the user-friendliness in the development of this device, non-invasive electrodes are used in this project instead of invasive electrodes. It performed well even when exerted with only a small amount of power.
This paper describes the development of EMG signal acquisition system application for model cart ... more This paper describes the development of EMG signal acquisition system application for model cart control. The main application of this type of control is to assist disabled people or frail people to control a cart or device via their healthy muscle. In this project, the circuit was simulated, developed and troubleshoots. The aim of model cart control was to control four basic directions which is forward, backward, turn left and turn right. Threshold voltage level comparison method is used in this project for model cart control. By considering the user friendly issue for the application system, EMG signal acquisition method was decided to be used and obtained with surface electrode. There are two stages to be done for this system, in which the first stage is the signal acquisition system and the second stage is to control the action of model cart. First stage included pre-amplifier, rectification and filtering, which were done with instrumentation amplifier, active low pass and high pass filter and precision full wave rectifier. Second stage included the microcontroller and motor driver in which the microcontroller functions to read the two channel EMG signal and give signal for the motor driver to control the DC geared motor. The result of the hardware testing is compared with the software simulation where the same output is obtained. There were also some limitation and problem which have not been solved. There was wire connected to the model cart where it is not very convenient for the model cart to move around or further.
Myogram on-and-off controller is important for improving or assisting the elderly people. One of ... more Myogram on-and-off controller is important for improving or assisting the elderly people. One of the most important aspects of the controller development is to determine the on and off time with respect to the body movement. In this project, high accuracy signal filtering, high gain amplifier, signal converter, microcontroller and electrodes are used for circuit simulation and development to obtain muscle signal (Electromyogram). Precision rectifier is used to solve the ordinary semiconductor problem to avoid signal block. To ensurethe user-friendliness in the development of this device, non-invasive electrodes are used in this project instead of invasive electrodes.
Analysis of electromyogram (EMG) signal processing and its application to identify human muscle s... more Analysis of electromyogram (EMG) signal processing and its application to identify human muscle strength of rehabilitation purpose has been successfully carried out in this paper. Single channel EMG signal was obtained from human muscle using non-invasive electrodes and further process by signal acquisition circuit to get a suitable signal to be process. In the first part of signal acquisition, the amplification circuit for the small EMG signal has been design successfully. After amplification stage EMG signal was digitized through analogue and digital converter (ADC) then further process in microcontroller (ATmega328) for getting accurate EMG signal. Finally, the processed EMG signal was classified into 6 different levels in order to display the muscle strength level of the user. This EMG device can be used to help the weak person or an elderly to identity their strength level of muscle for clinical rehabilitation purpose.
This paper venture into prospective ideas of finding viable solution of nanoelectronics device de... more This paper venture into prospective ideas of finding viable solution of nanoelectronics device design by an assessment of incorporating vertical impact-ionization MOSFET (IMOS) with strained SiGe technology into a formation of an emerging device structure with elevated performance and reliable outcomes for future bio-based sensor application. Impact Ionization FET biosensors can be extremely promising for applications where ultra-high sensitivity and fast response is
desirable. An ultra-low power with low Subthreshold Swing and
high breakdown voltage are imperative for ultra-sensitive biosensor. Impact ionization MOSFET (IMOS) is expected to
have a subthreshold swing (S) down to 20 mV/dec which is much lower compared to Conventional MOSFET (CMOS). This will eventually enhanced the switching behavior of the transistor and enhancing its electrical performance and response time particularly when scaled down into nanometre regime. However, vertical IMOS experience parasitic bipolar transistors (PBT) effect and low breakdown voltage. Parasitic Bipolar Transistor effect is a phenomenon where the MOSFET act as a minority carrier device like BJT instead of majority carrier device. This is not favorable for any power device or sensor. Dielectric Pocket (DP) is believed to be able to minimize the PBT effect while improving the performance of the device. Eventually, this device will prolong the increase density of transistor in a chip for future application of biosensor nanoelectronics.
The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (V... more The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOSDP) has been successfully developed and analyzed in this paper. There are significant drop in subthreshold slope (S) while threshold voltage is increase as the body doping concentration increases. It is notable that for body doping concentration above 1020, the S values keep increasing which is not recommended as the switching speed getting higher distracting performance of the device. An improved stability of threshold voltage, VTH was found for VESIMOS-DP device of various DP size ranging from 20nm to 80nm. The stability is due to the reducing charge sharing effects between source and drain region. In addition, the output characteristic was also highlighted a very good drain current at different gate voltage with the increasing of drain voltage for VESIMOS-DP with high body doping concentration. VESIMOSDP with low body doping concentration suffers PBT effect that prevents the device from being able to switch off. Hence, high body doping concentrations are imperative for obtaining better device characteristics and ensure the device works in II mode.
The Vertical Strained SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) ... more The Vertical Strained SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. The effect of doping concentration for both Source and Drain (S/D) as well as body doping concentration to the performance of VESIMOS-DP in terms of subthreshold slope (S), threshold voltage (VTH) and drain current has been observed in this paper. An inverse proportional of S and VTH value was found when S/D doping concentration increased. It is notable that for S/D doping concentration above 1019 atoms/cm3, there is a significant increase in S values which is not recommended as the switching speed getting higher distracting performance of the device. However, too low S/D doping concentration is not essential as it didn’t show any significant improvement on the performance of the device. It is also revealed that with low body doping concentration, the device suffers tremendous Parasitic Bipolar Transistor (PBT) effect that prevents the device from switched off. Thus, optimum doping concentration is imperative to obtain superb device characteristic. Due to the DP layer, a stable VTH =1.35V obtained due to the vicinity of DP layer near the drain end has reduced charge sharing between the source and drain. The slight different and consistency of VESIMOS-DP subthreshold value (S = 19 mV/dec) has given advantages for incorporating DP layer near the drain end. In many aspects, it is revealed that the incorporation of DP has enhanced the electrical performance and suppressed PBT effect of IMOS in the nanometer regime for future development of nanoelectronic device.
The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ion... more The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this paper. It is found that the drain current for single (SC) and dual channel (DC) VESIMOS were increased sharply initially due to the presence of Germanium. Germanium has high impact ionization rates to ensure that the transition from OFF state to ON state is abrupt. However, breakdown voltage of the SC device was decreased from BV=2.9V to 2.5V by increasing the composition of Ge from 10% to 30%. The same characteristics were found for DC VESIMOS where BV= 2V had decreased to 1.6V by varying the Ge composition. In short, the breakdown voltage which affected by the appearance of the second SiGe channel and Ge composition was justified. Apart from that, with the presence of the second SiGe channel, the switching speed and ION/IOFF of the device were improved. It was found that the sub-threshold slope of SC and DC VESIMOS were inversely proportional to the breakdown voltage.
Myogram on and off controller is important for improving or assist weak or the elderly people. On... more Myogram on and off controller is important for improving or assist weak or the elderly people. One of the most important aspects of the controller development is to determine the on and off time with respect to the body movement. In this project, high accuracy signal filtering, high gain amplifier, signal converter, microcontroller and electrodes are used for circuit simulation and development to obtain muscle signal (Electromyogram). A good quality amplifier is used in the circuit to achieve high accuracy performance of the process. Safety precaution is important in biomedical equipment to avoid accident to the user. In order to prevent accident, an isolating circuit has been included in this project to protect the user. To ensure the user-friendliness in the development of this device, non-invasive electrodes are used in this project instead of invasive electrodes. It performed well even when exerted with only a small amount of power.
This paper describes the development of EMG signal acquisition system application for model cart ... more This paper describes the development of EMG signal acquisition system application for model cart control. The main application of this type of control is to assist disabled people or frail people to control a cart or device via their healthy muscle. In this project, the circuit was simulated, developed and troubleshoots. The aim of model cart control was to control four basic directions which is forward, backward, turn left and turn right. Threshold voltage level comparison method is used in this project for model cart control. By considering the user friendly issue for the application system, EMG signal acquisition method was decided to be used and obtained with surface electrode. There are two stages to be done for this system, in which the first stage is the signal acquisition system and the second stage is to control the action of model cart. First stage included pre-amplifier, rectification and filtering, which were done with instrumentation amplifier, active low pass and high pass filter and precision full wave rectifier. Second stage included the microcontroller and motor driver in which the microcontroller functions to read the two channel EMG signal and give signal for the motor driver to control the DC geared motor. The result of the hardware testing is compared with the software simulation where the same output is obtained. There were also some limitation and problem which have not been solved. There was wire connected to the model cart where it is not very convenient for the model cart to move around or further.
Myogram on-and-off controller is important for improving or assisting the elderly people. One of ... more Myogram on-and-off controller is important for improving or assisting the elderly people. One of the most important aspects of the controller development is to determine the on and off time with respect to the body movement. In this project, high accuracy signal filtering, high gain amplifier, signal converter, microcontroller and electrodes are used for circuit simulation and development to obtain muscle signal (Electromyogram). Precision rectifier is used to solve the ordinary semiconductor problem to avoid signal block. To ensurethe user-friendliness in the development of this device, non-invasive electrodes are used in this project instead of invasive electrodes.
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Papers by Bun Seng
desirable. An ultra-low power with low Subthreshold Swing and
high breakdown voltage are imperative for ultra-sensitive biosensor. Impact ionization MOSFET (IMOS) is expected to
have a subthreshold swing (S) down to 20 mV/dec which is much lower compared to Conventional MOSFET (CMOS). This will eventually enhanced the switching behavior of the transistor and enhancing its electrical performance and response time particularly when scaled down into nanometre regime. However, vertical IMOS experience parasitic bipolar transistors (PBT) effect and low breakdown voltage. Parasitic Bipolar Transistor effect is a phenomenon where the MOSFET act as a minority carrier device like BJT instead of majority carrier device. This is not favorable for any power device or sensor. Dielectric Pocket (DP) is believed to be able to minimize the PBT effect while improving the performance of the device. Eventually, this device will prolong the increase density of transistor in a chip for future application of biosensor nanoelectronics.
drain current has been observed in this paper. An inverse proportional of S and VTH value was found when S/D doping
concentration increased. It is notable that for S/D doping concentration above 1019 atoms/cm3, there is a significant increase in S values which is not recommended as the switching speed getting higher distracting performance of the device. However, too low S/D doping concentration is not essential as it didn’t show any significant improvement on the performance of the device. It is also revealed that with low body doping concentration, the device suffers tremendous Parasitic Bipolar Transistor (PBT) effect that prevents the device from switched off. Thus, optimum doping concentration is imperative to obtain superb device characteristic. Due to the DP layer, a stable VTH =1.35V obtained due to the vicinity of DP layer near the drain end has reduced charge sharing between the source and drain. The slight different and consistency of VESIMOS-DP subthreshold value (S = 19 mV/dec) has given advantages for incorporating DP layer near the drain end. In many aspects, it is revealed that the incorporation of DP has enhanced the electrical performance and suppressed PBT effect of IMOS in the nanometer regime for future development of nanoelectronic device.
microcontroller functions to read the two channel EMG signal and give signal for the motor driver to control the DC geared motor. The result of the hardware testing is compared with the software simulation where the same output is obtained. There were also some limitation and problem which have not been solved. There was wire connected to the model cart where it is not very convenient for the model cart to move around or further.
desirable. An ultra-low power with low Subthreshold Swing and
high breakdown voltage are imperative for ultra-sensitive biosensor. Impact ionization MOSFET (IMOS) is expected to
have a subthreshold swing (S) down to 20 mV/dec which is much lower compared to Conventional MOSFET (CMOS). This will eventually enhanced the switching behavior of the transistor and enhancing its electrical performance and response time particularly when scaled down into nanometre regime. However, vertical IMOS experience parasitic bipolar transistors (PBT) effect and low breakdown voltage. Parasitic Bipolar Transistor effect is a phenomenon where the MOSFET act as a minority carrier device like BJT instead of majority carrier device. This is not favorable for any power device or sensor. Dielectric Pocket (DP) is believed to be able to minimize the PBT effect while improving the performance of the device. Eventually, this device will prolong the increase density of transistor in a chip for future application of biosensor nanoelectronics.
drain current has been observed in this paper. An inverse proportional of S and VTH value was found when S/D doping
concentration increased. It is notable that for S/D doping concentration above 1019 atoms/cm3, there is a significant increase in S values which is not recommended as the switching speed getting higher distracting performance of the device. However, too low S/D doping concentration is not essential as it didn’t show any significant improvement on the performance of the device. It is also revealed that with low body doping concentration, the device suffers tremendous Parasitic Bipolar Transistor (PBT) effect that prevents the device from switched off. Thus, optimum doping concentration is imperative to obtain superb device characteristic. Due to the DP layer, a stable VTH =1.35V obtained due to the vicinity of DP layer near the drain end has reduced charge sharing between the source and drain. The slight different and consistency of VESIMOS-DP subthreshold value (S = 19 mV/dec) has given advantages for incorporating DP layer near the drain end. In many aspects, it is revealed that the incorporation of DP has enhanced the electrical performance and suppressed PBT effect of IMOS in the nanometer regime for future development of nanoelectronic device.
microcontroller functions to read the two channel EMG signal and give signal for the motor driver to control the DC geared motor. The result of the hardware testing is compared with the software simulation where the same output is obtained. There were also some limitation and problem which have not been solved. There was wire connected to the model cart where it is not very convenient for the model cart to move around or further.