[go: up one dir, main page]

Song et al., 2015 - Google Patents

A 180nm CMOS wireless transceiver by utilizing guard band for narrowband IoT applications

Song et al., 2015

Document ID
7160330491493368502
Author
Song Z
Liu X
Jin Z
Zhao X
Liu Q
Yin Y
Chi B
Publication year
Publication venue
2015 IEEE Asian Solid-State Circuits Conference (A-SSCC)

External Links

Snippet

A fully-integrated wireless transceiver (TRX) is presented for 750~ 960MHz narrowband IoT applications by utilizing the guard band of mobile communication systems. The TRX consists of a low-IF receiver with 180 kHz signal bandwidth, a mixed-signal polar transmitter with …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/403—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00—Modulated-carrier systems
    • H04L27/32—Carrier systems characterised by combinations of two or more of the types covered by groups H04L27/02, H04L27/10, H04L27/18 or H04L27/26
    • H04L27/34—Amplitude- and phase-modulated carrier systems, e.g. quadrature-amplitude modulated carrier systems
    • H04L27/36—Modulator circuits; Transmitter circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/25—Arrangements specific to fibre transmission
    • H04B10/2575—Radio-over-fibre, e.g. radio frequency signal modulated onto an optical carrier
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors

Similar Documents

Publication Publication Date Title
Song et al. A low-power NB-IoT transceiver with digital-polar transmitter in 180-nm CMOS
Sowlati et al. Quad-band GSM/GPRS/EDGE polar loop transmitter
Borremans et al. A 40nm CMOS highly linear 0.4-to-6GHz receiver resilient to 0dBm out-of-band blockers
US9647639B1 (en) Baseband filters and interfaces between a digital-to-analog converter and a baseband filter
Ye et al. A digitally modulated 2.4 GHz WLAN transmitter with integrated phase path and dynamic load modulation in 65nm CMOS
Klemmer et al. 9.1 A 45nm CMOS RF-to-Bits LTE/WCDMA FDD/TDD 2× 2 MIMO base-station transceiver SoC with 200MHz RF bandwidth
Yu et al. A fully-integrated reconfigurable dual-band transceiver for short range wireless communications in 180 nm CMOS
Perraud et al. A direct-conversion CMOS transceiver for the 802.11 a/b/g WLAN standard utilizing a Cartesian feedback transmitter
Yu et al. A sub-GHz low-power transceiver with PAPR-tolerant power amplifier for 802.11 ah applications
Choi et al. A 5.8-GHz DSRC Transceiver With a 10-$\mu {\hbox {A}} $ Interference-Aware Wake-Up Receiver for the Chinese ETCS
Manganaro et al. Advances in analog and RF IC design for wireless communication systems
Kopta et al. An approximate zero IF FM-UWB receiver for high density wireless sensor networks
Tan et al. A 2.4 GHz WLAN transceiver with fully-integrated highly-linear 1.8 V 28.4 dBm PA, 34dBm T/R switch, 240MS/s DAC, 320MS/s ADC, and DPLL in 32nm SoC CMOS
Song et al. A 180nm CMOS wireless transceiver by utilizing guard band for narrowband IoT applications
Choi et al. A low power 2.4-GHz CMOS direct-conversion transmitter for IEEE 802.15. 4
Wu et al. A Current-Mode mm-Wave direct-conversion receiver with 7.5 GHz Bandwidth, 3.8 dB minimum noise-figure and+ 1dBm P 1dB, out linearity for high data rate communications
Shih et al. A highly-integrated 3–8 GHz ultra-wideband RF transmitter with digital-assisted carrier leakage calibration and automatic transmit power control
Khalaf et al. A digitally modulated 60GHz polar transmitter in 40nm CMOS
Tang et al. 21.4 An LTE-A multimode multiband RF transceiver with 4RX/2TX inter-band carrier aggregation, 2-carrier 4× 4 MIMO with 256QAM and HPUE capability in 28nm CMOS
Wang et al. A 2.85-mm 2 Wideband RF Transceiver in 40-nm CMOS for IoT Micro-Hub Applications
Yin et al. A 0.1–6.0-GHz dual-path SDR transmitter supporting intraband carrier aggregation in 65-nm CMOS
Song et al. A fully-integrated reconfigurable transceiver for narrowband wireless communication in 180nm CMOS
Wei et al. A fully integrated reconfigurable low-power sub-GHz transceiver for 802.11 ah in 65nm CMOS
You et al. A power mixer based dual-band transmitter for NB-IoT applications
Kim et al. A 900 MHz Zero‐IF RF Transceiver for IEEE 802.15. 4g SUN OFDM Systems