[go: up one dir, main page]

You et al., 2019 - Google Patents

A power mixer based dual-band transmitter for NB-IoT applications

You et al., 2019

Document ID
13880018999940772614
Author
You X
Feng H
Xing X
Wang Z
Publication year
Publication venue
2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS)

External Links

Snippet

Narrow Band Internet of Things (NB-IoT) technology has played an important role in low-rate and long-range IoT applications. A fully integrated dual-band transmitter (TX) based on a novel power mixer is illustrated in this paper. The power mixer occupies very small chip area …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0483—Transmitters with multiple parallel paths
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/403—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1433—Balanced arrangements with transistors using bipolar transistors

Similar Documents

Publication Publication Date Title
Song et al. A low-power NB-IoT transceiver with digital-polar transmitter in 180-nm CMOS
Sowlati et al. Quad-band GSM/GPRS/EDGE polar loop transmitter
Ye et al. A digitally modulated 2.4 GHz WLAN transmitter with integrated phase path and dynamic load modulation in 65nm CMOS
WO2021061851A1 (en) Power amplifier bias modulation for low bandwidth envelope tracking
Cheng et al. Challenges and requirements of multimode multiband power amplifiers for mobile applications
Lee et al. A 120 GHz I/Q transmitter front-end in a 40 nm CMOS for wireless chip to chip communication
Seth et al. A dynamically biased multiband 2G/3G/4G cellular transmitter in 28 nm CMOS
Rossi et al. An LTE transmitter using a class-A/B power mixer
Mortazavi et al. A four-way series Doherty digital polar transmitter at mm-wave frequencies
Degani et al. A 1x2 MIMO Multi-Band CMOS Transceiver with an Integrated Front-End in 90nm CMOS for 802.11 a/g/n WLAN Applications
CN105811893B (en) A kind of circuit structure of envelope-tracking radio-frequency power amplifier
Shen et al. A fully-integrated digital-intensive polar Doherty transmitter
Manganaro et al. Advances in analog and RF IC design for wireless communication systems
CN218514356U (en) Power amplifier PA
Bechthum et al. A CMOS polar class-G switched-capacitor PA with a single high-current supply, for LTE NB-IoT and eMTC
Choi et al. Power amplifiers and transmitters for next generation mobile handsets
Vorapipat et al. A wideband voltage mode Doherty power amplifier
US8670730B2 (en) Power efficient radio frequency transmitter
Tan et al. A 2.4 GHz WLAN transceiver with fully-integrated highly-linear 1.8 V 28.4 dBm PA, 34dBm T/R switch, 240MS/s DAC, 320MS/s ADC, and DPLL in 32nm SoC CMOS
Khalaf et al. A digitally modulated 60GHz polar transmitter in 40nm CMOS
You et al. A power mixer based dual-band transmitter for NB-IoT applications
Wang et al. A 2.85-mm 2 Wideband RF Transceiver in 40-nm CMOS for IoT Micro-Hub Applications
Afsahi et al. Fully integrated dual-band power amplifiers with on-chip baluns in 65nm CMOS for an 802.11 n MIMO WLAN SoC
Sheinman et al. An active up conversion mixer covering the entire 71–86GHz Eband range in SiGe Technology
Song et al. A 180nm CMOS wireless transceiver by utilizing guard band for narrowband IoT applications