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Sağol et al., 2009 - Google Patents

Lifetime and performance of ingaasp and ingaas absorbers for low bandgap tandem solar cells

Sağol et al., 2009

Document ID
7111226555241610419
Author
Sağol B
Szabo N
Döscher H
Seidel U
Höhn C
Schwarzburg K
Hannappel T
Publication year
Publication venue
2009 34th IEEE Photovoltaic Specialists Conference (PVSC)

External Links

Snippet

Time resolved photoluminescence (TRPL) measurements were used to evaluate the lifetimes of the low bandgap absorber materials InGaAsP (1.03 eV) and InGaAs (0.73 eV) embedded between InP barriers. A low bandgap tandem solar cell based on these absorber …
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    • H01L31/03046Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • H01L31/068Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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