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Siergiej et al., 2004 - Google Patents

InGaAsP/InGaAs tandem TPV device

Siergiej et al., 2004

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Document ID
12787995279058688095
Author
Siergiej R
Sinharoy S
Valko T
Wehrer R
Wernsman B
Link S
Schultz R
Messham R
Publication year
Publication venue
AIP Conference Proceedings

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Snippet

Power conversion in a thermophotovoltaic (TPV) system can be accomplished with single p‐ n junctions which are interconnected on‐wafer (monolithic interconnected module (MIM) approach) or off‐wafer (individual chip module approach) to form large area arrays. Using a …
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    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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