Vikulin et al., 2017 - Google Patents
Economical transducers of environmental parameters to a frequency for the end devices of IoTVikulin et al., 2017
- Document ID
- 6424322165770086474
- Author
- Vikulin I
- Gorbachev V
- Gorbacheva A
- Krasova V
- Polakov S
- Publication year
- Publication venue
- 2017 2nd International Conference on Advanced Information and Communication Technologies (AICT)
External Links
Snippet
The possibility of using a unijunction transistor in the relaxation generator circuit as a highly sensitive frequency transducer of temperature, light, magnetic field, pressure, concentration of gases and radiation level as a sensor for the end-devices of IoT is experimentally …
- 239000007789 gas 0 abstract description 24
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
- H01L31/112—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1124—Devices with PN homojunction gate
- H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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