Cornils et al., 2010 - Google Patents
How to extract the sheet resistance and Hall mobility from arbitrarily shaped planar four-terminal devices with extended contactsCornils et al., 2010
- Document ID
- 5366085893984014719
- Author
- Cornils M
- Rottmann A
- Paul O
- Publication year
- Publication venue
- IEEE transactions on electron devices
External Links
Snippet
Van der Pauw's method enables the sheet resistance R_\rmsq and the Hall mobility \rmH to be extracted from arbitrarily shaped simply connected planar samples with four peripheral pointlike contacts. This paper generalizes the method for devices with extended contacts. It …
- 238000005259 measurement 0 abstract description 27
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/10—Plotting field distribution; Measuring field distribution
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L43/06—Hall-effect devices
- H01L43/065—Semiconductor Hall-effect devices
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L43/02—Details
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104181475B (en) | Method for three-dimensional Hall sensor and the measurement space magnetic field in space exploration magnetic field | |
| US8829900B2 (en) | Low offset spinning current hall plate and method to operate it | |
| TWI683119B (en) | Hall sensor and compensation method for offset caused by temperature distrubution in hall sensor | |
| US9435662B2 (en) | Magneto-resistive angle sensor and sensor system using the same | |
| TW201518753A (en) | Magnetoresistive sensing device | |
| CN102236736B (en) | Circuit simulation model of crossed CMOS (complementary metal-oxide-semiconductor) integrated Hall magnetic sensor | |
| CN105093137B (en) | Vertical Hall effect device | |
| Ausserlechner | Hall effect devices with three terminals: Their magnetic sensitivity and offset cancellation scheme | |
| Fan et al. | Modeling of three-axis Hall effect sensors based on integrated magnetic concentrator | |
| Zhao et al. | Research of the monolithic integrated 3-D magnetic field sensor based on MEMS technology | |
| Cornils et al. | How to extract the sheet resistance and Hall mobility from arbitrarily shaped planar four-terminal devices with extended contacts | |
| Sander et al. | Isotropic 3D silicon Hall sensor | |
| Schurig et al. | A vertical Hall device in CMOS high-voltage technology | |
| Osberger et al. | High resolution shallow vertical Hall sensor operated with four-phase bi-current spinning current | |
| Sander et al. | Monolithic isotropic 3D silicon Hall sensor | |
| US7205622B2 (en) | Vertical hall effect device | |
| Zhao et al. | Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor | |
| Vonderschmidt et al. | A fluidic bridge based MEMS paramagnetic oxygen sensor | |
| Kaufmann et al. | A computationally efficient numerical model of the offset of CMOS-integrated vertical Hall devices | |
| Baschirotto et al. | Fluxgate magnetic sensor and front-end circuitry in an integrated microsystem | |
| Cornils et al. | Sheet resistance determination using symmetric structures with contacts of finite size | |
| CN108983119A (en) | A kind of single-chip integration two-dimensional magnetic vector sensor and its integrated manufacture craft | |
| Huang et al. | A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices | |
| Dobrovolsky et al. | Theory of magnetic-field-sensitive metal–oxide–semiconductor field-effect transistors | |
| Sander et al. | Geometry study of an isotropic 3D Silicon Hall sensor |