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Cristoloveanu et al., 2019 - Google Patents

The concept of electrostatic doping and related devices

Cristoloveanu et al., 2019

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Document ID
4721348599529807778
Author
Cristoloveanu S
Lee K
Park H
Parihar M
Publication year
Publication venue
Solid-State Electronics

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Electrostatic doping aims at replacing donor/acceptor dopant species with free electron/hole charges induced by the gates in ultrathin MOS structures. Highly doped N+/P+ terminals and virtual PN junctions can be emulated in undoped layers prompting innovative reconfigurable …
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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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