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Cho et al., 2020 - Google Patents

Simulation of capacitorless dynamic random access memory based on junctionless FinFETs using grain boundary of polycrystalline silicon

Cho et al., 2020

Document ID
9975670320681443794
Author
Cho M
Mun H
Lee S
Jang J
Bae J
Kang I
Publication year
Publication venue
Applied Physics A

External Links

Snippet

In this paper, we report a junctionless FinFET-based capacitor less dynamic memory by using three-dimensional technology computer-aided design simulations. To realize the 1T- DRAM, the proposed device has been designed as a structure in which a poly-si layer is …
Continue reading at link.springer.com (other versions)

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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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