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Landini et al., 1999 - Google Patents

Characteristics of homoepitaxial 4H-SiC films grown on c-axis substrates offcut towards< 11̄00> or< 112̄0>

Landini et al., 1999

Document ID
4598381294851306994
Author
Landini B
Brandes G
Publication year
Publication venue
Applied physics letters

External Links

Snippet

Substrate orientation plays a critical role in determining SiC epilayer quality, but limited work has been done to examine the effect of offcut directions on 4H-SiC epilayers. 4H-SiC epilayers were grown on substrates offcut 8° towards either the< 11̄00> or the< 112̄0> …
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
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